• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.5
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• pp.1592-1596
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• 2010

According to the increase of the channel length with fixed width/length, characteristic curves of drain current as a function of gate bias voltage of indium gallium zinc oxide (IGZO) thin-film transistors moved to a positive direction of gate voltage, and field-effect mobility decreased. In case of fixed length and width of channel, field-effect mobility was lower and subthreshold slope was larger when drain bias voltage was higher. Due to large work function of IGZO, band bending at the junction region between IGZO channel and source/drain electrodes was expected to be in opposite direction to that between silicon and metal electrodes; this could explain the above results.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.10a
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• pp.258-260
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• 2017

Smart mobility is rapidly emerging as a next-generation eco-friendly transportation system, and the market is booming every year. However, due to the characteristics of the devices that use electricity as the power source, the motor and the battery are different from the performance and actual performance indicated by the manufacturer depending on the user's weight and driving environment. Therefore, The frequency of the overload is increased and the failure and damage of the device are increasing. In this paper, we propose an application that provides personalized recommended driving guidance and overloaded driving situation notification at the actual driving separately from the recommended driving provided by the manufacturer after measuring the driving environment of the user, so as to prevent malfunction and damage of the smart mobility device, To ensure safety.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.3A
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• pp.287-295
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• 2010

In wireless sensor networks(WSNs), the studies that support sink mobility without global position information exploit a Backbone-based Virtual Infrastructure (BVI) which considers one-hop clusters and a backbone-based tree. Since the clusters of a sink and a source node are connected via flooding into the infrastructure, it causes high routing cost. Although the network could reduce the number of clusters via multi-level clusters, if the source nodes exist at nearest clusters from the cluster attached by the sink and they are in different branches of the tree, the data should be delivered via detour paths on the tree. Therefore, to reduce the number of clusters, we propose a novel multi-hop cluster based communication protocol supporting sink mobility without global position information. We exploit a rendezvous cluster head for sink location service and data dissemination but the proposed protocol effectively reduces data detour via comparing cluster hops from the source. Simulation shows that the proposed protocol is superior to the existing protocols in terms of the data delivery hop counts.

• Journal of IKEEE
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• v.5 no.1 s.8
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• pp.59-66
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• 2001

In this paper, we propose a dynamic source routing protocol supporting asymmetric paths for mobile Ad Hoc networks that contain unidirectional links. At present, the existing dynamic source routing protocol supports only symmetric paths that consist of bidirectional links for routing. However, in fact, there can exist unidirectional links due to asymmetric property of mobile terminals or current wireless environment. Thus, we implement a mobile Ad Hoc routing protocol supporting unidirectional links, which is fit for more general wireless environment. Especially, the proposed protocol uses an improved multipath maintenance method in order to perform rapid route reconfiguration when route error due to mobility is detected. For performance evaluation, we consider the following factors: average route discovery time and average data reception rate. In order to obtain the factors of the performance evaluation, we did simulation for 900 seconds in the step of 100 seconds with the following scenarios: usage of route cache in intermediate nodes on route path, and different mobility/connection patterns.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.506-508
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• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.223-226
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• 2004

MgO thin films were deposited bye-beam evaporation on $SiO_2$/Si wafers for the application of a protective layer in alternating current plasma display panels (AC-PDPs). Three different MgO sources, single crystal, melted polycrystal and sintered polycrystal, were used to find out the change of the properties of MgO protective layer depending on the source type. The properties of MgO thin films such as density, orientation and surface morphology were influenced by the source type. MgO thin films deposited with the melted polycrystal source had the highest density with the highest (100) preferred orientation, whereas the films deposited with the sintered polycrystal source had the lowest density with less preferred orientation. Such a result seems to be originated from the different mobility of adatoms on the surface of the deposited MgO thin films. Different microstructures of MgO thin films deposited even in the same deposition condition were observed depending on the MgO source type, resulting in different discharge characteristics.

• Journal of Radiation Protection and Research
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• v.11 no.1
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• pp.65-69
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• 1986

An asymmetry in dose profile of a $^{60}Co$ teletherapy unit was found by means of water-phantom measurement. The reason of that trouble was confirmed to be the abnormal 'ON' position of the source, which is resulted from the high friction between contiguous surfaces of the spring for driving the source to 'OFF' position. Lubrication in the spring improved the mobility a little, but was not a radical repair. The radical repair was to replace the old spring by new one. Periodic maintenance for source driving system and periodic measurement of field symmetry are required for prevention of abnormal 'ON' position of $^{60}Co$ source.

• Environmental Engineering Research
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• v.23 no.1
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• pp.76-83
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• 2018

Spatial moment analysis has been performed on the concentration of the first species in a multispecies solute transport in porous media. Finite difference numerical technique was used in obtaining the solute concentration. A constant continuous source of contaminant was injected at the inlet of the domain. Results suggest that the decaying of solute mass increases as the magnitude of mean fluid velocity increases. The dispersion coefficient is highly time dependent under decaying of solutes with a complex behavior of mixing of solutes. The solute mobility and mixing varies non-linearly with time during its initial period, while the same ceases with higher decay rates of the first species much faster.

• Journal of information and communication convergence engineering
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• v.14 no.1
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• pp.21-25
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• 2016

N-screen is a promising technology to improve support for multimedia multicasting, content sharing, content mobility, media scalability, and seamless mobility. In this paper, the WiMedia distributed-MAC (D-MAC) protocol is adopted for development of a seamless N-screen wireless service. Furthermore, to provide a multi-hop, one source multi-use N-screen service through point to point streaming in a seamless D-MAC protocol, a dynamic multi-frame transmission technology is proposed. In this technology, a dynamic time slot allocation scheme and a multi-hop resource reservation scheme are combined. In the proposed dynamic time slot allocation scheme, two thresholds, a hard threshold and a soft threshold, are included to satisfy the power consumption and delay requirements. A multi-frame DRP reservation scheme is proposed to minimize end-to-end delay during the multi-hop transmissions between N-screen devices. The proposed dynamic multi-frame transmission scheme enhances N-screen performance in terms of the multi-hop link establishment success rate and link establishment time compared to the conventional WiMedia D-MAC system.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.148-152
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• 1999

the low temperature magnetoresistance effect, electron mobilities, and 2 Dimensional electron Gases (2DEG) properties were investigated in $Si/Si_{1-x}Ge_x$ quantum well devices. N-type $Si/Si_{1-x}Ge_x$ structures were fabricated by utilizing a gas source Molecular Beam Epitaxy (GSMBE). Thermal oxidation was carried out in a dry O atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by using a Hall effect and a magnetoresistant effect at low temperatures down to 0.4K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2DEG) in s tensile strained Si quantum well. The electron sheet density (ns) of $1.5\times10^{12}[\textrm{cm}^{-2}]$ and corresponding electron mobility of 14200 $[\textrm{cm}^2V^{-1}s^{-1}]$ were obtained at a low temperature of 0.4K from $Si/Si_{1-x}Ge_x$ structures with thermally grown oxides.