• Macromolecular Research
• /
• 제8권3호
• /
• pp.116-119
• /
• 2000

The doping behaviors of water-soluble poly(3-thiopheneacetic acid) (P3TAA) and ie gel using I$_2$and concentrated HCIO$_4$aqueous solutions were investigated by UV-Visible absorption spectrometer. Electrical conductivity of tile doped polyhiophene gel was also studied. I$_2$-doping of water-soluble P3TAA gave rise to a new broad polaron peak at around 749 nm, which corresponds to localization of electron. It was found that doping ability of P3TAA gel was strikingly dependent on the concentration of HCIQ solution.

• Korean Chemical Engineering Research
• /
• 제40권6호
• /
• pp.729-734
• /
• 2002

본 연구에서 PSS로 도핑된 EB와 LEB 형태의 폴리아닐린 필름을 ITO전극위에 m-cresol, chloroform 혼합용액을 도포시켜 제조하였다. UV 실험결과로부터 m-cresol에 의한 이차 도핑 효과를 확인 할 수 있었으며, m-cresol의 양이 증가할수록 폴리아닐린 필름의 전도도는 증가하였다. 이차도핑에 의한 전도도 향상은 제조된 폴리아닐린과 m-cresol의 상호작용에 의한 것으로 판단된다. 폴리아닐린의 전기화학적 실험결과 LEB로 제작된 폴리아닐린 전극의 산화 환원 피크 전류는 EB로 제작된 폴리아닐린 전극보다 더 크고 가역적인 것을 CV를 통해 구할 수 있었다. 또한 전하전달 저항은 m-cresol의 양이 증가할수록 감소하였으며, LEB/PSS 전극의 전하 전달 저항 값이 EB/PSS 전극보다 작았다. 이것은 CV에서 얻은 경향과 일치하였다. 제조된 폴리아닐린 전극 모두 이중층 용량과 용액저항은 일정하였으며, 용액저항은 주파수에 무관한 인자임을 알 수 있었다. 또한 PSS로 도핑된 폴리아닐린은 가상적인 n형 전도성 고분자의 특성을 나타내었다.

• Current Photovoltaic Research
• /
• 제4권2호
• /
• pp.54-58
• /
• 2016

Laser-doped selective emitter process requires dopant source deposition, spin-on-glass, and is able to form selective emitter through SiNx layer by laser irradiation on desired locations. However, after laser doping process, the remaining dopant layer needs to be washed out. Laser-induced melting of pre-deposited impurity doping is a precise selective doping method minimizing addition of process steps. In this study, we introduce a novel scheme for fabricating highly efficient selective emitter solar cell by laser doping. During this process, laser induced damage induces front contact destabilization due to the hindrance of silver nucleation even though laser doping has a potential of commercialization with simple process concept. When the laser induced damage is effectively removed using solution etch back process, the disadvantage of laser doping was effectively removed. The devices fabricated using laser doping scheme power conversion efficiency was significantly improved about 1% abs. after removal the laser damages.

• Bulletin of the Korean Chemical Society
• /
• 제34권7호
• /
• pp.2029-2035
• /
• 2013

The impact of phosphorous (P)-doping on the electrochemical performance and surface chemistry of soft carbon is investigated by means of galvanostatic cycling and ex situ X-ray photoelectron spectroscopy (XPS). P-doping plays an important role in storing more Li ions and discernibly improves reversible capacity. However, the discharge capacity retention of P-doped soft carbon electrodes deteriorated at $60^{\circ}C$ compared to non-doped soft carbon. This poor capacity retention could be improved by vinylene carbonate (VC) participating in forming a protective interfacial chemistry on soft carbon. In addition, the effect of P-doping on exothermic thermal reactions of lithiated soft carbon with electrolyte solution is discussed on the basis of differential scanning calorimetry (DSC) results.

• 한국전기전자재료학회논문지
• /
• 제23권6호
• /
• pp.487-490
• /
• 2010

This paper describes the elecrtical and optical characteristics of $N_2$ doped porous 3C-SiC films. Polycrystalline 3C-SiC thin films are anodized by $HF+C_2H_5OH$ solution with UV-LED exposure. The growth of in-situ doped 3C-SiC thin films on p-type Si (100) wafers is carried out by using APCVD (atmospheric pressure chemical vapor deposition) with a single-precursor of HMDS (hexamethyildisilane: $Si_2(CH_3)_6)$. 0 ~ 40 sccm $N_2$ was used for doping. After the growth of doped 3C-SiC, porous 3C-SiC is formed by anodization with $7.1\;mA/cm^2$ current density for anodization time of 60 sec. The average pore diameter is about 30 nm, and etched area is increased with $N_2$ doping rate. These results are attributed to the decrease of crystallinity by $N_2$ doping. Mobility is dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC are 2.5 eV and 2.7 eV, respectively.

• 한국재료학회지
• /
• 제30권8호
• /
• pp.399-405
• /
• 2020

In the present investigation we show the effect of Al doping on the length, size, shape, morphology, and sensing property of ZnO nanorods. Effect of Al doping ultimately leads to tuning of electrical and optical properties of ZnO nanorods. Undoped and Al-doped well aligned ZnO nanorods are grown on sputtered ZnO/SiO₂/Si (100) pre-grown seed layer substrates by hydrothermal method. The molar ratio of dopant (aluminium nitrate) in the solution, [Al/Zn], is varied from 0.1 % to 3 %. To extract structural and microstructural information we employ field emission scanning electron microscopy and X-ray diffraction techniques. The prepared ZnO nanorods show preferred orientation of ZnO <0001> and are well aligned vertically. The effects of Al doping on the electrical and optical properties are observed by Hall measurement and photoluminescence spectroscopy, respectively, at room temperature. We observe that the diameter and resistivity of the nanorods reach their lowest levels, the carrier concentration becomes high, and emission peak tends to approach the band edge emission of ZnO around 0.5% of Al doping. Sensing behavior of the grown ZnO nanorod samples is tested for H₂ gas. The 0.5 mol% Al-doped sample shows highest sensitivity values of ~ 60 % at 250 ℃ and ~ 50 % at 220 ℃.

• 한국세라믹학회지
• /
• 제38권12호
• /
• pp.1144-1149
• /
• 2001

본 연구에서는 화염가수분해증착법(Flame Hydrolysis Deposition : FHD)을 이용하여 실리콘(Si)/실리카(SiO$_2$) 광도파막을 제조하고, 이 박막에 Solution Doping 법을 이용해 Er/Al을 복합 첨가하여 광증폭 매질을 제작하는 연구를 수행하였다. 형광 측정을 통해 Al의 복합첨가에 의한 형광효율의 감소 방지 및 형광 스펙트럼의 반치폭 증가를 확인할 수 있었다. 즉, Al가 0.48wt%가 첨가된 경우, Er가 0.14wt% 첨가되는 경우에도 형광세기가 감소하지 않음을 확인하였으며, $1.5mu extrm{m}$ 대역의 형광스펙트럼의 대역폭이 약 5nm 정도 증가됨을 관찰하였다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1989년도 하계종합학술대회 논문집
• /
• pp.299-301
• /
• 1989

This study presents a method of preparing $YBa_2Cu_3O_{7-x}$ ceramic and chlorine doping in it for the purpose of Jc enhancement us ins sol-gel process.Tetramethylammonium-hydroxide and pottasium carbonate solution were added to the aqueous solution of Yttrium nitrate, Barium chloride and Copper nitrate for pH control as well as forming hydroxy-carbonate precipitation. Instead of Barium nitrate, Barium chloride was used for doping chloride impurities in the specimen. The resulted materal showed good high Tc-superconductivity after calcination. Tc and Jc value are 92 K and 120.8 $A/cm^2$ respectively.

• Bulletin of the Korean Chemical Society
• /
• 제22권12호
• /
• pp.1371-1374
• /
• 2001

Metal doping was adopted to modify TiO2 (P-25) and enhance the photocatalytic degradation of harmful cyanides in aqueous solution. Ni, Cu, Co, and Ag doped TiO2 were found to be active photocatalysts for UV light induced degradation of aqueous cyanides generating cyanate, nitrate and ammonia as main nitrogen-containing products. The photoactivity of Ni doped TiO2 was greatly affected by the state of Ni, that is, the crystal size and the degree of reduction of Ni. The modification effects of some mixed oxides, that is, Ni-Cu/TiO2 were also studied. The activity of Ni-Cu/TiO2 for any ratio of Cu/Ni was higher than that of Ni- or Cu-doped TiO2, and the catalyst at the Cu/Ni ratio of 0.3 showed the highest activity for cyanide conversion.

• Current Photovoltaic Research
• /
• 제10권1호
• /
• pp.23-27
• /
• 2022

In this study, we investigate organic-inorganic halide perovskite solar cells with a vacuum thermal evaporated hole transporting layer (NPB/MoO_3-x). By replacing solution process based Spiro-MeOTAD with vacuum thermal evaporation based NPB/MoO_3-x, a thin hole transporting layer was implemented. In addition, parasitic absorption that may occur during the doping process was eliminated by excluding solution process doping. In a solar cell with a thin vacuum thermal evaporated hole transporting layer, the short-circuit current density (Jsc) increased to 23.93 mA/cm², resulting in the highest power converstion efficiency (PCE) at 18.76%. Considering these results, it is essential to control the thickness of hole transporting layer located at the top in solar cell configuration.