• Journal of the Optical Society of Korea
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• 제7권2호
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• pp.47-52
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• 2003

Effect of soaking temperature on erbium doping of the optical fiber core during solution doping procedure, especially in the modified chemical vapor deposition (MCVD) process, was investigated. The concentration of dopants such as $Er^{3+} and Al^{3+}$ in the preforms and the optical fibers measured by the electron probe microanalysis (EPMA) and the optical spectrum analyzer (OSA) was found to increase with decreasing the soaking temperature. The increase in the concentration of the $Er^{3+}$ is attributed to the precipitation of the erbium due to the decrease in the solubility as well as the increase of capillary force and viscosity of the doping solution by decreasing the temperature.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.80.1-80.1
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• 2000

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
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• pp.209.1-209
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• 2000

• Transactions on Electrical and Electronic Materials
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• 제16권2호
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• pp.103-105
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• 2015

Effect of silicon doping into ZnSnO systems was investigated using solution process. Addition of silicon was used to suppress oxygen vacancy generation. The transfer characteristics of the device showed threshold voltage shift toward the positive direction with increasing Si content due to the high binding energy of silicon atoms with oxygen. As a result, the carrier concentration was decreased with increasing Si content.

• Elastomers and Composites
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• 제56권4호
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• pp.250-253
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• 2021

Polypyrrole is an organic thermoelectric material which has been receiving extensive attention in recent years. Polypyrrole is applicable in various fields because its electrical properties are controllable by its doping concentration. In this study, the effects of the polypyrrole doping state on its photoresponse were investigated. The degree of doping was controlled by ammonia solution treatment. Then, the chemical structure as a function of the doping states was observed by Raman analysis. Moreover, the photocurrent and photovoltage characteristics for various doping states were measured by an asymmetrically irradiated light source. As the degree of doping increased, the electrical conductivity increased, which affected the photocurrent. Meanwhile, the photovoltage was related to the temperature gradient caused by light irradiation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.411.1-411.1
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• 2016

In this study, we examined the effects of boron doping on the dielectric reliability of solution processed aluminum oxide ($Al_2O_3$). When boron is doped in aluminum oxide, the hysteresis reliability is improved from 0.5 to 0.4 V in comparison with the undoped aluminum oxide. And the accumulation capacitance is increased when boron was doped, which implying the reduction of the thickness of dielectric film. The improved dielectric reliability of boron-doped aluminum oxide is originated from the small ionic radius of boron ion and the stronger bonding strength between boron and oxygen ions than that of between aluminum and oxygen ions. Strong boron-oxygen ion bonding in aluminum oxide results dielectric film denser and thinner. The leakage current of aluminum oxide also reduced when boron was doped in aluminum oxide.

• 한국재료학회지
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• 제11권5호
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• pp.385-392
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• 2001

집적형 광증폭기는 대량생산이 용이하고. 단일 칩에 다기능의 광소자를 집적할 수 있다는 장점 때문에 활히 연구되어져 왔다. 본 연구에서는 수동형 집적광소자의 제작에 사용되는 화염가수분해증착법 (FHD)을 이용하여 실리콘 (Si) /실리카 ($SiO_2$) 광도파막을 제작하고, 이 박막에 Solution Doping 법을 이용하여 $Er^{3+}$ 를 첨가하여 광증폭 매질을 제작하는 연구를 수행하였다.

• 한국전기전자재료학회논문지
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• 제31권4호
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• pp.203-207
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• 2018

In this work, we investigate the effects of lithium doping on the electric performance of solution-processed n-type zinc tin oxide (ZTO)/p-type silicon carbide (SiC) heterojunction diode structures. The proper amount of lithium doping not only affects the carrier concentration and interface quality but also influences the temperature sensitivity of the series resistance and activation energy. We confirmed that the device characteristics vary with lithium doping at concentrations of 0, 10, and 20 wt%. In particular, the highest rectification ratio of $1.89{\times}107$ and the lowest trap density of $4.829{\times}1,022cm^{-2}$ were observed at 20 wt% of lithium doping. Devices at this doping level showed the best characteristics. As the temperature was increased, the series resistance value decreased. Additionally, the activation energy was observed to change with respect to the component acting on the trap. We have demonstrated that lithium doping is an effective way to obtain a higher performance ZTO-based diode.

• 반도체디스플레이기술학회지
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• 제3권3호
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• pp.19-21
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• 2004

This paper presents a 3-dimensional diffusion simulation with adaptive solution strategy. The developed diffusion simulator VLSIDIF-3 was designed to re-refine areas. Refine scheme was calculated by the difference of doping concentration between any of two nodes. Each element is greater than tolerance and redo diffusion process until error is tolerable. Numerical experiment in low doping diffusion problem showed that this adaptive solution strategy is very efficient in both memory and time, and expected this scheme would be more powerful in complex diffusion model.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2004년도 춘계학술대회 발표 논문집
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• pp.55-58
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• 2004

This paper presents a 3-dimensional diffusion simulation with adaptive solution strategy. The developed diffusion simulator VLSIDIF-3 was designed to re-refine areas where difference of doping concentration between any of two nodes of each element is greater than tolerance and redo diffusion process until error is tolerable. Numerical experiment in low doping diffusion problem showed that this adaptive solution strategy is very efficient in both memory and time, and expected this scheme would be more powerful in complex diffusion model.