• Title/Summary/Keyword: Solid-liquid interface

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APPLICATION OF IMPEDANCE SPECTROSCOPY TO POLYCRYSTALLINE SI PREPARED BY EXCIMER LASER ANNEALING (임피던스 측정법을 이용한 엑시머 레이져 열처리 Poly-Si의 특성 분석)

  • 황진하;김성문;김은석;류승욱
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.200-200
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    • 2003
  • Polycrystalline Si(polysilicon) TFTs have opened a way for the next generation of display devices, due to their higher mobility of charge carriers relative to a-Si TFTs. The polysilicon W applications extend from the current Liquid Crystal Displays to the next generation Organic Light Emitting Diodes (OLED) displays. In particular, the OLED devices require a stricter control of properties of gate oxide layer, polysilicon layer, and their interface. The polysilicon layer is generally obtained by annealing thin film a-Si layer using techniques such as solid phase crystallization and excimer laser annealing. Typically laser-crystallized Si films have grain sizes of less than 1 micron, and their electrical/dielectric properties are strongly affected by the presence of grain boundaries. Impedance spectroscopy allows the frequency-dependent measurement of impedance and can be applied to inteface-controlled materials, resolving the respective contributions of grain boundaries, interfaces, and/or surface. Impedance spectroscopy was applied to laser-annealed Si thin films, using the electrodes which are designed specially for thin films. In order to understand the effect of grain size on physical properties, the amorphous Si was exposed to different laser energy densities, thereby varying the grain size of the resulting films. The microstructural characterization was carried out to accompany the electrical/dielectric properties obtained using the impedance spectroscopy, The correlation will be made between Si grain size and the corresponding electrical/dielectric properties. The ramifications will be discussed in conjunction with active-matrix thin film transistors for Active Matrix OLED.

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Metallurgical Refinement of Multicrystalline Silicon by Directional Solidification (일방향 응고법에 의한 다결정 실리콘의 야금학적 정련)

  • Jang, Eunsu;Park, Dongho;Yu, Tae U;Moon, Byung Moon
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.111.1-111.1
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    • 2011
  • The solar energy is dramatically increasing as the alternative energy source and the silicon(Si) solar cell are used the most. In this study, the improved process and equipment for the metallurgical refinement of multicrystalline Si were evaluated for the inexpensive solar cell. The planar plane and columnar dendrite aheadof the liquid-solid interface position caused the superior segregation of impurities from the Si. The solidification rate and thermal gradient determined the shape of dendrite in solidified Si matrix solidified by the directional solidification(DS) method. To simulate this equipment, the commercial software, PROCAST, was used to solve the solidification rate and thermal gradient. Si was vertically solidified by the DS system with Stober process and up-graded metallurgical grade or metallurgical grade Si was used as the feedstock. The inductively coupled plasma mass spectrometry (ICP) was used to measure the concentration of impurities in the refined Si ingot. According to the result of ICP and simulation, the high thermal gradient between the two phases wasable to increase the solidification rate under the identical level of refinement. Also, the separating heating zone equipped with the melting and solidification zone was effective to maintain the high thermal gradient during the solidification.

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Effect of Solidification Conditions and Heat Treatment on the Mechanical Properties of the $Al-CuAl_2$ Eutectic Composite (Al-$CuAl_2$ 공정복합재료의 기계적 성질에 미치는 응고조건과 열처리의 영향)

  • Lee, Hyun-Kyu;Lee, Ju-Hong;Hong, Jong-Hwi
    • Journal of Korea Foundry Society
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    • v.10 no.4
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    • pp.332-341
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    • 1990
  • The structure and tensile properties of the unidirectionally solidified Al-33wt.%Cu alloy have been investigated. Casted Al-33wt.%Cu alloy was unidirectionally solidified with rates (R) between 1㎝/hr and 24cm/hr maintaining the thermal gradient(G) at solid-liquid interface, $32^{\circ}C/cm$ and $21^{\circ}C/cm$. The entectic struture was varied according to the growth condition(G/R radio). When G/R ratio was larger than $8.5{\times}10^3$ $^{\circ}C/cm^2/sec$ the lamellar structure was formed, and colony structure was formed when G/R ratio was smaller than $8.5{\times}10^3$ $^{\circ}C/cm^2/sec$. The interlamellar spacing(${\gamma}$) in the above alloy system was vaired with the growth rate(R) According to "${\gamma}^2{\cdot}R=8.8{\times}10^{-11}cm^2/sec$" relationship. The yield stress (${\sigma}$0.001) and UTS for samples in the as-grown condition increased with the interlamellar spacing decrease and the values corresponding to colony structure are lower than those corresponding to amellar structure with the same lamellar spacing. The yield stress for samples in aged condition did not change with the interlamellar spacing.

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A Study on the CdTe Single Crystal Growth by Vertical Bridgman Method (수직 Bridgman 법에 의한 CdTe 단결정 성장에 관한 연구)

  • Lee, Jong-Ki;Kim, Wook;Baik, Hong-Koo
    • Journal of Korea Foundry Society
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    • v.10 no.4
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    • pp.324-331
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    • 1990
  • The single crystal of CdTe was grown by modified 6 zone Bridgman method under the conditions of excess Te and excess Cd. To prevent the constitutional supercooling, the crystal growth was done under the temperature gradient of $17^{\circ}C/cm$ in front of the solid /liquid interface and the growth rate was 3mm/hr. The grain morphologies and the growth mechanism were investigated in excess Te and excess Cd conditions. The grain size of excess Te crystal was increased with an increase of the distance from the tip but, in the case of excess Cd crystal, single crystal was not obtained because of the cavities due to the excess Cd vapors so that the grain size was not increased with an increase of the distance from the tip. In addition, the growth of single crystal of CdTe was done with repeated necking ampoule. It was found that the necking had no effects on the grain selection because the cavities trapped in the necking portion acted as heterogeneous nucleation sites.

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Effect of Digestion Temperature on the Solid-Liquid Separation Characteristics of Anaerobically Digested Municipal Sewage Sludge (도시하수슬러지의 혐기성소화시 고액분리 특성에 미치는 소화온도의 영향)

  • Han, Jang Woon;Chang, Duk;Kim, Sung Soon
    • Journal of Korean Society of Water and Wastewater
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    • v.8 no.1
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    • pp.1-8
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    • 1994
  • Laboratory experiments were conducted to investigate the effect of digestion temperature on the settleability and dewaterability of anaerobically digested sludge. The digesters were operated at a hydraulic retention time of 20 days with a loading rate of 0.63~0.66kg volatile solids per cubic meter per day at the temperature of $35^{\circ}C$ and $55^{\circ}C$. A mixed primary and secondary municipal sludge was used as a feed. The interface height of the sludge during settling test was recorded to identify settleability. As a measure of dewaterability of the sludge, specific resistance and capillary suction time were also measured with and without chemical conditioning. Higher digestion efficiency was obtained at $55^{\circ}C$ than $35^{\circ}C$. However, the settleability and dewaterability of the sludge at $35^{\circ}C$ were quite higher than those of the sludge digested at $55^{\circ}C$. The optimum dosages of ferric chloride for sludge conditioning were 0.4% and 0.6% at $35^{\circ}C$ and $55^{\circ}C$, respectively. The filtrate COD of the sludge digested at $55^{\circ}C$ was higher than at $35^{\circ}C$, which means that poor dewaterability of the sludge result in high filtrate COD.

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Distribution of Grown-in Defects in the Fast-pulled Czochralski-silicon Single Crystals (고속 인상 초크랄스키 실리콘 단결정에서 성장 결함 분포)

  • 박봉모;서경호;오현정;이홍우;유학도
    • Korean Journal of Crystallography
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    • v.14 no.2
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    • pp.84-92
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    • 2003
  • The fast pulling is easy to modify the distribution of grown-in defects toward fine size, which can be readily removed by additional treatment. In this experiment, The fast pulled crystals with high pulling late over 1.0 mm/min were grown and their grown-in defect distributions were investigated. In our recent developments in the growth of Cz-Si, it could be found that the cooling rate in a specific temperature range and the uniformity of temperature gradient at solid/liquid interface are more important for the formation of grown-in defect than the pulling rate itself. We analyzed these cooling rates and temperature gradients for the various fast pulled crystals and compared them to the observed formation behavior of the grown-in defects. The effective factor (Ω) for the void defect formation was introduced and it could explain the radial distribution of void defects in the fast-pulled crystals effectively.

Application of Composites Composed of Phosphoric Acid-Doped Silica Gel and Styrene-Ethylene-Butylene-Styrene Elastomer to Electric Double-Layer Capacitors

  • Matsuda, Atsunori;Honjo, Hiroshi;Hirata, Kazuki;Tatsumisago, Masahiro;Minami, Tsutomu
    • The Korean Journal of Ceramics
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    • v.5 no.4
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    • pp.353-356
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    • 1999
  • Highly proten-conductive elastic composites have been successfully prepared from $H_3PO_4$-doped silica gel and styrene-ethylene-butylene-styrene block elastic copolymer. In addition solid state electric double-layer capacitors have been fabricated using the composite as an electrolyte and activated carbon powders(ACP) hybridized with the composite as a polrizable electrode. The cyclic voltammogram of the electric double-layer capacitor fabricated demonstrated that electric charge was stored in the elecric double-layer at the interface between the polarizable electrode and the electrolyte. The value of capacitance of the capacitor was 10 F/(gram of total ACP), which was comparable to that of the capacitors using conventional liquid electrolytes.

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Numerical Study on Bubble Growth and Droplet Ejection in a Bubble Inkjet Printer (버블 잉크젯에서의 기포성장 및 액적분사에 관한 수치적 연구)

  • Suh, Young-Ho;Son, Gi-Hun
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.30 no.11 s.254
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    • pp.1107-1116
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    • 2006
  • The droplet ejection process driven by an evaporating bubble in a thermal inkjet printhead is investigated by numerically solving the conservation equations for mass, momentum and energy. The phase interfaces are tracked by a level set method which is modified to include the effect of phase change at the interface and extended for multiphase flows with irregular solid boundaries. The compressibility effect of a bubble is also included in the analysis to appropriately describe the bubble expansion behaviour associated with the high pressure caused by bubble nucleation. The whole process of bubble growth and collapse as well as droplet ejection during thermal inkjet printing is simulated without employing a simplified semi-empirical bubble growth model. Based on the numerical results, the jet breaking and droplet formation behaviour is observed to depend strongly on the bubble growth and collapse pattern. Also, the effects of liquid viscosity, surface tension and nozzle geometry are quantified from the calculated bubble growth rate and ink droplet ejection distance.

A study on the Solute Redistribution of Cu-Sn(P) Alloy (Cu-Sn(P) 합금(合金)의 용질재분배(溶質再分配)에 관(關)한 연구(硏究))

  • Shur, Su-Jeong;Cho, Soon-Hyunh;Kim, Ik-Soo;Yoon, Eui-Pak;Choi, Jeong-Cheol
    • Journal of Korea Foundry Society
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    • v.10 no.3
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    • pp.219-224
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    • 1990
  • In this, we have investigated the solute behavior in front of solid-liquid interface according to the change of the cooling rate in bronze alloy and phosphor bronze alloy. The conclusive summary is as follows: 1) The secondary dendrite arm spacing was decreased with increasing the cooling rate. 2) The minimum solute concentration happened to along centerline of primary arm, and the maximum solute concentration was found at the boundary of arm or between the arms the minimum solute concentration was increased with the cooling rate. 3) Segregation Index S was decreased with increasing the cooling rate and content of P. 4) The degree of the microsegregation was decreased with increasing the cooling rate. The effective distribution coefficient, Ke was increased with addition of P in Cu-Sn.

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The Evaluation Technique of Surface Region using Backward-Radiated Ultrasound (후방 복사된 초음파를 이용한 표면 지역의 평가 기술)

  • Kwon, S.D.
    • Journal of the Korean Society for Nondestructive Testing
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    • v.16 no.4
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    • pp.241-250
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    • 1997
  • The velocity dispersion of surface acoustical wave(SAW) of Si layer/mesh Au/Si substrate was measured by the frequency analysis technique of backward radiation at liquid/solid interface. The difference of backward radiation patterns depending on used transducers (2, 5, 10MHz) confirmed that the backward radiation phenomenon was caused by the energy radiation from SAW generated in surface region. An ultrasonic goniometer was constructed to measure continuously the angular dependence of backscattered intensity. The angular dependences of backward radiation(5MHz) were measured for Ni layer/Al substrate specimens that were bonded by epoxy involving different content of Cu powder. It was known that the width and pattern of backward radiation had informations such as the velocity dispersion, bonding quality and structure of surface region.

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