• 한국전기전자재료학회논문지
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• 제19권5호
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• pp.432-436
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• 2006

The $ZnGa_2O_4$ and Mn, Cr-doped $ZnGa_2O_4$ Phosphors were synthesized through conventional solid state reactions. The XRD patterns show that the $ZnGa_2O_4$ has a (3 1 1) main peak and a spinel phase. The emission wavelength of $ZnGa_2O_4$ showed main peak of 420 nm and maximum intensity at the sintering temperature of $1100^{\circ}C$. In the crystalline $ZnGa_2O_4$, the Mn shows green emission (510 nm, $^4T_1-^6A_1$) with a quenching concentration of 0.6 mol%, and the Cr shows red emission (705 nm, $^4T_2-^4A_2$) with a quenching concentration of 2 mol%. These results indicate that $ZnGa_2O_4$ Phosphors hold promise for potential applications in field emission display devices with high brightness operating in full color regions.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.659-663
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• 2011

[ $Y_{1-x}BO_3:Tb_x^{3+}$ ]ceramic phosphors were synthesized with changing the concentration of $Tb^{3+}$ at a sintering temperature of $1,100^{\circ}C$ and a reduction temperature of $950^{\circ}C$ by using a solid-state reaction method. The crystal structure, surface morphology, and photoluminescence properties of the phosphors were investigated as a function of $Tb^{3+}$ ion concentration by using XRD (x-ray diffractometer), scanning electron microscopy, and photoluminescence spectrophotometry, respectively. The XRD results showed that the main peak of the phosphor powders occurs at (101) plane. As for the photoluminescence properties, the excitation spectra showed the broad band centered at 306 nm and the emission intensity of the spectra peaked at 543 nm indicated a significant decrease as the concentration of $Tb^{3+}$ ion is increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.49-49
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• 2008

ZnO-based varistors have been widely used for voltage stabilization or transient surge suppression in electric power systems and electronic circuits. Recently, It has reported that the varistor behavior with nonlinear coefficient of 6~17 in Mn-doped ZnO. In this study we have chosen the composition of ZnO-$TeO_2-Mn_3O_4$ (ZTM) system to the purpose of whether varistor behavior appeared in doped ZnO by the solid state sintering or not. We investigated the sintering and electric properties of 0.5~3.0 at% Mn doped ZnO-1.0 at% $TeO_2$ system. Electrical properties, such as current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy were conducted. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. The average grain size of sintered samples was at about $3{\mu}m$ and decreased with increasing Mn contents. It was found that a good varistor characteristics were developed in ZTM system sintered at $1100^{\circ}C$ (nonlinear coefficient $\alpha$ ~ 60). The results of C-V characteristics such as barrier height ($\Theta$), donor density ($N_d$), depletion layer (W), and interface state density ($N_t$) in ZTM ceramics were $4\times10^{17}cm^{-3}$, 0.7 V, 40 nm, and $1.6\times10^{12}cm^{-2}$, respectively. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots in ZTM system.

• 전기화학회지
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• 제19권2호
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• pp.50-56
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• 2016

본 연구에서는 습식분쇄, 분무건조 및 열처리 공정을 통해 알루미늄 및 마그네슘이 치환된 구형의 스피넬계 $Li_{1.10}Mn_{1.86}Al_{0.02}Mg_{0.02}O_4$ 양극재료를 합성하였다. 이때 공정변수로는 전구체를 만드는 분무건조공정에서 고형분(20~30 wt%)을, 열처리 공정에서는 산소분위기 유무를 변수로 하였다. 제조된 모든 양극재료는 상온에서 매우 우수한 전지특성을 보여주었으나, 출력특성에 있어서는 5C 방전곡선이 기준이 되는 0.1C 방전곡선 대비 서로 상이한 거동을 보임을 확인하였다. 이러한 고출력 거동의 차이는 첫째, 충방전 곡선상에서 3.3 V(vs. $Li/Li^+$) plateau 구간의 반응 용량 측정을 통해 양극재료의 산소결함 수준의 차이로 인한 것임을 확인하였다. 공기분위기에서 제조한 양극재료는 산소분위기에서 제조한 것에 비해 두 배 이상의 plateau 거동을 보이고 있으며, 이러한 현상으로부터 제조된 양극재료의 산소결함 정도와 방전초기 과전압 정도는 상관관계가 있음을 확인할 수 있었다. 둘째로는 임피던스 측정을 통해 산출된 확산계수로부터 고형분이 상대적으로 낮은 상태에서 제조된 양극재료가 그렇지 않은 양극재료에 비해 상대적으로 절반 이하 낮은 값을 가지고 있음을 알 수 있었다. 또한 입자 내부 형상 분석을 통한 내부 치밀도 및 임피던스 분석을 통한 확산속도의 차이를 확인함으로써, 방전 말단의 과전압 거동은 입자 내부의 리튬이온 확산속도와 관련이 있음을 확인하였다. 확산계수는 고형분이 상대적으로 낮은 20 wt% 상태에서 제조된 양극재료의 경우가 가장 낮으며, 이는 동일 양극재료의 내부 공극률이 가장 높은 결과와 부합하는 것이다.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.22-26
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• 2013

PTCR ceramics of $(Ba_{0.998}Sm_{0.002})TiO_3+0.001MnCO_3+xSiO_2$ (x=1, 2, 3, 4, 5, 6 mol%) were fabricated by solid state method. Disk samples of diameter 5 mm and thickness about 1mm were sintered at $1,290^{\circ}C$ for 2 h in reduced atmosphere of $5%H_2-95%N_2$ followed by re-oxidation at $600^{\circ}C$ for 30 min. in $20%O_2-80%N_2$.and their microstructures and electrical properties were investigated with SEM and Multimeter. The color of sintered samples was strongly dependent on $SiO_2$ content showing that the color of samples with $SiO_2$ of 1~2 mol% was gray but that of samples with $SiO_2$ of 4~6 mol% was changed from gray to blue, which seems to be related with the reduction of samples due to the oxygen vacancies created during the sintering in reduced atmosphere. $SiO_2$ content had a great influence on the microstructure and the electrical properties. With increasing $SiO_2$ content, the grain size of samples increased and the resistivity as well as the resistivity jump ($R_{285}/R_{min}$) decreased, which is considered to be attributed to the resistivity change at grain interior and grain boundary due to the fast mass transfer through $SiO_2$ liquide phase during the sintering. Samples with 2 mol% $SiO_2$ has the resistivity of $202{\Omega}cm$ and the resistivity jump of 3.28. It is expected that $SiO_2$ doped $BaTiO_3$ based PTC ceramics can be used for multilayered PTC thermistor due to the resistance to the sintering in reduced atmosphere.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1420-1421
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• 2006

In this study, structural and micowave dielectric properties of the $Mg_{5}B_{4}O_{15}$ (B=Ta, Nb) cation-deficient perovskite ceeramics. The specimens are prepared through the solid-state route. According to the XRD pattern, $Mg_{4}Ta_{2}O_9$ and $MgTa_{2}O_6$ phase exist in calcined and sintered $Mg_{5}Ta_{4}O_{15}$ powder. Also $Mg_{5}Ta_{4}O_{15}$ phase added with increasing sintering temperature. In the case of calcined and sintered $Mg_{5}Nb_{4}O_{15}$ powder, single phase of $Mg_{5}Nb_{4}O_{15}$ were appeared. The bulk density and quality factor of the $Mg_{5}B_{4}O_{15}$ (B=Ta, Nb) ceramics were increased with sinteming temperature in $1400^{\circ}C{\sim}1450^{\circ}C$, but these were decreased in another sintering temperature. Dielectric constant of the $Mg_{5}Ta_{4}O_{15}$ ceramics was increased continuously with increasing of sintering temperature. And the dielectric constant of the $Mg_{5}Nb_{4}O_{15}$ ceramics was increased in $1400^{\circ}C{\sim}1450^{\circ}C$ but decreased in $1475^{\circ}C$. In the case of the $Mg_{5}Ta_{4}O_{15}$ and $Mg_{5}Nb_{4}O_{15}$ ceramics sintered at $1450^{\circ}C$ for 5h, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 8.2, 259,473 GHz, -10.91 $ppm/^{\circ}C$ and 14, 37,350 GHz, -52.3 $ppm/^{\circ}C$, respectively.

• 대한금속재료학회지
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• 제47권8호
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• pp.488-493
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• 2009

Direct syntheses of bulk $Ti_3Al$ via electro-discharge-sintering (EDS) of a stoichiometric elemental powder mixture were investigated. A capacitor bank of $450{\mu}F$ was charged with three input energies, 0.5, 1.0, and 1.5 kJ. The charged capacitor bank was then instantaneously discharged through 0.3 g of a Ti-25.0 at.%Al powder mixture for consolidation. Complete phase transformation occurred in less than $200{\mu}sec$ by the discharge and a bulk $Ti_3Al$ compact was obtained. Compared with consolidated samples fabricated by conventional methods such as high vacuum sintering and casting, the electro-discharge-sintered $Ti_3Al$ compact shows a very fine microstructure with a hardness value of 425 Hv. Electro-discharge-sintering under a $N_2$ atmosphere successfully modified the surface Ti oxide of the $Ti_3Al$ compact into Ti nitride, which concurred with the synthesis and consolidation of $Ti_3Al$. Complete conversion yielding a single phase $Ti_3Al$ is primarily dominated by the fast solid state diffusion reaction.

• 한국분말재료학회지
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• 제30권2호
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• pp.107-115
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• 2023

Li_1.3Al_0.3Ti_1.7(PO₄)₃(LATP) is considered a promising material for all-solid-state lithium batteries owing to its high moisture stability, wide potential window (~6 V), and relatively high ion conductivity (10^-3-10^-4 S/cm). Solid electrolytes based on LATP are manufactured via sintering, using LATP powder as the starting material. The properties of the starting materials depend on the synthesis conditions, which affect the microstructure and ionic conductivity of the solid electrolytes. In this study, we synthesize the LATP powder using sol-gel and co-precipitation methods and characterize the physical properties of powder, such as size, shape, and crystallinity. In addition, we have prepared a disc-shaped LATP solid electrolyte using LATP powder as the starting material. In addition, X-ray diffraction, scanning electron microscopy, and electrochemical impedance spectroscopic measurements are conducted to analyze the grain size, microstructures, and ion conduction properties. These results indicate that the synthesis conditions of the powder are a crucial factor in creating microstructures and affecting the conduction properties of lithium ions in solid electrolytes.

• 한국세라믹학회지
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• 제53권1호
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• pp.99-104
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• 2016

High purity Si-C (99.999%) powder prepared by mechanical alloying was added to a commercial SiC powder as a sintering additive. Reaction bonded silicon carbide balls and jars with high purity (99.98%) were used for the mechanical alloying. As a result, the purity of the sintered Si-C was higher than 99.99%. When sintered at $2200^{\circ}C$ under 50 MPa pressure for 1 h, SiC containing 10 wt% of high purity Si-C showed a relative density of 95.3%, similar to the relative density of commercial SiC (95%). However, the relative density of SiC decreased to 90.6% without the additive when the applied pressure decreased to 40 MPa. In contrast, the relative density was nearly unaffected by the decrease of the pressure when using the Si-C additive. Therefore, the addition of Si-C powder promoted the densification of SiC above $2000^{\circ}C$ under 40 MPa pressure.

• 한국전기전자재료학회논문지
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• 제14권6호
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• pp.460-465
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• 2001

(Ba$_{0.6-x}$Sr$_{0.4}$Ca$_{x}$)TiO$_3$(x=1.10,0.15,0.20) specimens were fabricated by the solid state reaction method and then the structural and dielectric properties as a function of he composition ratio and sintering temperature were studied. As a result of the differential thermal analysis(DTA), exothermic peak was observed at around 102$0^{\circ}C$ due to the formation of the polycrystalline perovskite phase. The BSCT(50/40/10) specimen sintered at 150$0^{\circ}C$ showed the highest average grain size(18.25${\mu}{\textrm}{m}$). The Curie temperature and dielectric constant at room temperature decreased with increasing Ca content. The dielectric constant and dielectric loss of the BSCT(50/40/10) specimen, sintered at 145$0^{\circ}C$, were about 4324 and 0.972% at 1KHz, respectively.ively.