• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 추계학술대회 논문집
• /
• pp.85-88
• /
• 1998

Light-emitting diode(LEDs), diode arrays, and phosphor display panels are finding increased use in a variety of commercial applications. Present and anticipated application of these devices include solid state indicator(e.g., digital clocks, meter readout) and display systems(e.g., instrument panels, TV display), the application being determined by the light -output capability and size availability(cost) of the particular device. In this work, Phosphor based on ZnS:Cu are used. Relation by luminance with the thickness of insulating layer and phosphor layer are discussed. Increased thickness of insulating layer are stable on voltage to 300V. By considering thickness and voltage, optimal structure and thickness are investigated. Also in order to maximize even surface emission, various sieving process are introduced. Very similar phosphor particle size is selected. Luminance by various wave intensity is also investigated. 150cd/m$^2$ luminance are investigated in stable voltage and frequency.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.345-345
• /
• 2010

1T-DRAM cell with solid phase (SPC) crystallized poly-Si thin film transistor was fabricated and electrical characteristics were evaluated. The fabricated device showed kink effect by negative back bias. Kink current is due to the floating body effect and it can be used to memory operation. Current difference between "1" state and "0" state was defined and the memory properties can be improved by using gate induced drain leakage (GIDL) current.

• 대한전자공학회논문지
• /
• 제16권2호
• /
• pp.24-34
• /
• 1979

반도체 소자의 모델에 대한 특성을 비교하고 체제적인 모데링 기법에 대하여 논하였다. 체계적인 모데링 기법을 이용한 FET의 선형 및 비선형 모델을 구하고 모델을 이용하여 과도해석하는 프로그램을 개발하였다.

• 한국정보통신학회논문지
• /
• 제17권11호
• /
• pp.2479-2485
• /
• 2013

본 논문에서는 순차 바이어스를 이용한 반도체 레이더용 SSPA를 설계 하였다. 전력증폭기의 상승/하강 바이어스 지연에 의해 발생되는 신호의 왜곡을 제거하기 위하여 가변확장 펄스 생성기를 적용하였다. 최적화된 임피던스 매칭회로는 GaN-전력 소자의 높은 효율을 갖기 위하여 로드-풀 방식을 통한 마이크로파 특성 측정으로 설계되었다. 설계된 SSPA는 X밴드 반도체 레이더에 적용하기 위하여 전치 증폭기, 구동 증폭기 그리고 주 증폭기의 3개의 단으로 구성되었다. 그 결과로 200W 출력 펄스 최대 53.67dBm을 가지고 평균 52.85dBm의 SSPA를 만들 수 있었다. 본 논문에 제시된 반도체 펄스 압축 레이더 트랜시버 모듈의 최적화 설계는 추가적인 디지털 레이더에 대한 연구를 통해 소형화와 동작향상이 가능하다.

• 반도체디스플레이기술학회지
• /
• 제21권2호
• /
• pp.19-24
• /
• 2022

The purpose of this research is to determine the hardness of guide hole. A guide pin and a guide hole of SSD(Solid State Drive) tester used to mount SSD in a fixed position accurately. The guide pin and guide hole are worn by friction due to repeated operation, and the wear is concentrated on the guide hole made of weak material rather than the guide pin made of relatively strong material. Because of that reason, it is often overdesigned in the design stage because it can lose its function. If the guide hole is made soft, the manufacturing cost will decrease, but the accuracy will decrease due to wear caused by repeated friction. If the guide hole is manufactured excessively, the manufacturing process becomes complicated and the manufacturing cost increases. It is essential to design a guide hole, but since there is no standard or verified data that can be referenced, it is difficult to design. Experimental device which guides in the same way as the SSD tester is used for this research, and three types of anodizing state are experimented for different hardness. Also, weight of COK(Change over Kit) were analyzed by measuring the wear amount and state of the guide hole according to the number of repeated attachment and detachment.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.389.2-389.2
• /
• 2016

The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2012년도 전력전자학술대회 논문집
• /
• pp.230-231
• /
• 2012

This paper describes a gate driver that operates numerous semiconductor switch in the solide-state pulsed power modulator. the proposed gate driver is designed to receive both the isolated drive-power and the on/off pulse signals through the transformer. Moreover, the IGBT-switch can be quickly turned off by adding protection circuit. Therefore it protects the IGBT-switch from the arc condition that frequently occurs in high-voltage pulse application. To comprehend operating characteristic of each IGBT-switch in pulse output condition, the device consisting of a high efficiency soft-switching capacitor charger and two series stacking IGBT-switch is developed. Finally, the relability of the proposed gate driver and the device for its test are proved through PSpice simulation and experiments.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제5권2호
• /
• pp.136-147
• /
• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.463-463
• /
• 2014

Dye-sensitized solar cells (DSSCs) have generated a strong interest in the development of solid-state devices owing to their low cost and simple preparation procedures. Effort has been devoted to the study of electrolytes that allow light-to-electrical power conversion for DSSC applications. Several attempts have been made to substitute the liquid electrolyte in the original solar cells by using (2,2',7,7'-tetrakis (N,N-di-p-methoxyphenylamine)-9-9'-spirobi-fluorene (spiro-OMeTAD) that act as hole conductor [1]. Although efficiencies above 3% have been reached by several groups, here the major challenging is limited photoelectrode thickness ($2{\mu}m$), which is very low due to electron diffusion length (Ln) for spiro-OMeTAD ($4.4{\mu}m$) [2]. In principle, the $TiO_2$ layer can be thicker than had been thought previously. This has important implications for the design of high-efficiency solid-state DSSCs. In the present study, we have fabricated 3-D Transparent Conducting Oxide (TCO) by growing tin-doped indium oxide (ITO) nanowire (NWs) arrays via a vapor transport method [3] and mesoporous $TiO_2$ nanoparticle (NP)-based photoelectrodes were prepared using doctor blade method. Finally optimized light-harvesting solid-state DSSCs is made using 3-D TCO where electron life time is controlled the recombination rate through fast charge collection and also ITO NWs length can be controlled in the range of over $2{\mu}m$ and has been characterized using field emission scanning electron microscopy (FE-SEM). Structural analyses by high-resolution transmission electron microscopy (HRTEM) and X-Ray diffraction (XRD) results reveal that the ITO NWs formed single crystal oriented [100] direction. Also to compare the charge collection properties of conventional NPs based solid-state DSSCs with ITO NWs based solid-state DSSCs, we have studied intensity modulated photovoltage spectroscopy (IMVS), intensity modulated photocurrent spectroscopy (IMPS) and transient open circuit voltages. As a result, above $4{\mu}m$ thick ITO NWs based photoelectrodes with Z907 dye shown the best performing device, exhibiting a short-circuit current density of 7.21 mA cm-2 under simulated solar emission of 100 mW cm-2 associated with an overall power conversion efficiency of 2.80 %. Finally, we achieved the efficiency of 7.5% by applying a CH3NH3PbI3 perovskite sensitizer.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
• /
• pp.727-731
• /
• 2005

Design and manufacturing process of a full color LED microdislay fabricated by standard CMOS technology and containing an array of aluminum / nanostructured porous silicon reverse biased light emitting Schottky diodes will be discussed. Being of a solid state construction, this microdisplays are cost-effective, thin and light in weight due to very simple device architecture. Its benefits include also super high resolution, wide viewing angles, fast response time and wide operating temperature range. The advantages of full integration of an LED-array and driving circuitry onto a Si-chip will be also discussed.