• 제목/요약/키워드: Solid state device

검색결과 188건 처리시간 0.028초

Ionic liquids to the rescue? Overcoming the ionic conductivity limitations of polymer electrolytes

  • Hendcrson W.A.;Shin J.H.;Alessandrini F.;Passcrini S.
    • 한국전기화학회:학술대회논문집
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    • 한국전기화학회 2003년도 전지기술심포지움
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    • pp.153-168
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    • 2003
  • Polymer electrolytes - solid polymeric membranes with dissolved salts - are being intensively studied for use in all-solid-state lithium-metal-polymer consumer electronic device. The low ionic conductivity at room temperature of existing polymer electrolytes, however, has seriously hindered the development of such batteries for many applications. The incorporation of salts molten at room temperature (room temperature ionic liquids or RTILs) into polymer electrolytes may be the necessary solution to overcoming the inherent ionic conductivity limitations of 'dry' polymer electrolytes.

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연료전지의 개발 동향 (Status of Fuel Cell Technology)

  • 김귀열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.3-4
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    • 2007
  • Many electrochemical power devices such as solid state batteries and solid oxide fuel cell have been studied and developed for solving energy and environmental problems. Fuel cell is a modular, high efficient and environmentally energy conversion device, it has become a promising option to replace the conventional fossil fuel based electric power plants. This paper offers some new perspectives on fuel cell development and commercialization which come from the broad consideration of the commercialization efforts of the entire fuel cell industry.

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Field-induced Resistive Switching in Ge25Se75 Based ReRAM

  • 김장한;남기현;정홍배
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.413-414
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    • 2012
  • Programmable Metallization Cell (PMC) memory, which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

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Ge25Se75-based ReRAM 소자의 전계에 의한 저항 변화에 대한 연구 (Field-induced Resistive Switching in Ge25Se75-based ReRAM Device)

  • 김장한;남기현;정홍배
    • 한국전기전자재료학회논문지
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    • 제25권3호
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    • pp.182-186
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    • 2012
  • Resistance-change Random Access Memory(ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of $Ag^+$ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics according to field-effect.

반도체 변압기용 멀티레벨 H-bridge 컨버터에 적용한 간단한 전압 밸런싱 방법 (A Simplified Voltage Balancing Method Applied to Multi-level H-bridge Converter for Solid State Transformer)

  • 정동근;김호성;백주원;조진태;김희제
    • 전력전자학회논문지
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    • 제22권2호
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    • pp.95-101
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    • 2017
  • A simple and practical voltage balance method for a solid-state transformer (SST) is proposed to reduce the voltage difference of cascaded H-bridge converters. The tolerance device components in SST cause the imbalance problem of DC-link voltage in the H-bridge converter. The Max/Min algorithms of voltage balance controller are merged in the controller of an AC/DC rectifier to reduce the voltage difference. The DC-link voltage through each H-bridge converter can be balanced with the proposed control methods. The design and performance of the proposed SST are verified by experimental results using a 30 kW prototype.

고체 전기활성 고분자 기반 가변 렌즈의 연구동향 (A Review: All Solid-state Electroactive Polymer-based Tunable Lens)

  • 신은재;고현우;김상연
    • 로봇학회논문지
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    • 제16권1호
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    • pp.41-48
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    • 2021
  • In this paper, we review papers which report to the all solid-state electroactive polymer-based tunable lens. Since electroactive polymer-based tunable lenses change their focal length by responding to electric stimuli, it can be minimized the size and weight of optical modules. Thus, it has been received attention in the robot, mobile device and display industry. The all solid-state electroactive polymer-based tunable lenses can be classified into two categories depending on the classification of materials: ionic electroactive polymer-based lenses and non-ionic electroactive polymer-based lenses. Most of the ionic electroactive polymer-based tunable lenses are fabricated with ionic polymer-metal composite. So, the ionic electroactive polymer-based tunable lenses can be operated under low electric voltage. But small force, slow recovery time and environmental limitation for operation has been pointed to the disadvantage of the lenses. The non-ionic electroactive polymer-based tunable lenses are classified again into two categories: dielectric polymer-based tunable lenses and polyvinylchloride gel-based tunable lenses. The advantage of the dielectric polymer-based tunable lenses is fast response to electric stimuli. But the essential flexible electrodes degrade performance of the lens. Polyvinylchloride gel-based tunable lens has reported impressive performance without flexible electrodes.

문자구동형 후막 전계발광소자 제작 및 구동회로 설계 (Driving Circuit Design and Manufacture of Powder Electroluminescent Device for Information Display)

  • 이종찬;조황신;성현호;박응규;박대희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 C
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    • pp.1730-1732
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    • 2000
  • Powder Electroluminescent Device is the solid state device which has a low power consumption, large area emission with uniformity, easy manufacturing, simple structure, and flexible mechanically. In this paper, we made the information display with the powder electroluminescent device using back-light and designed the driving circuit.

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Field-induced Resistive Switching in Ge-Se Based ReRAM

  • 이규진;엄준경;정지수;장혜정;김장한;정홍배
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.342-342
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    • 2012
  • Resistance-change Random Access Memory (ReRAM), which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

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낸드 플래시 메모리의 불량 발생빈도를 이용한 저장장치의 수명 예측 최적화 방법 (A method for optimizing lifetime prediction of a storage device using the frequency of occurrence of defects in NAND flash memory)

  • 이현섭
    • 사물인터넷융복합논문지
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    • 제7권4호
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    • pp.9-14
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    • 2021
  • 고신뢰성을 요구하는 컴퓨팅 시스템에서 저장장치의 수명예측방법은 데이터 보호뿐만 아니라 활용성을 극대화 할 수 있기 때문에 시스템 관리하기 위한 중요한 요소 중 한 가지이다. 최근 여러 저장시스템에서 저장장치로 사용되고 있는 SSD(Solid State Drive)의 수명은 이를 구성하고 있는 낸드 플래시 메모리의 수명이 실질적인 수명과 연결된다. 따라서 SSD를 이용하여 구성한 저장시스템에서는 낸드 플래시 메모리의 수명을 정확하고 효율적으로 예측하는 방법이 필요하다. 본 논문에서는 낸드 플래시 메모리 불량 발생빈도를 이용하여 플래시 메모리 기반 저장장치의 수명 예측을 최적화할수 있는 방법을 제안한다. 이를 위해 DWPD(Drive Writes Per Day) 단위로 데이터를 처리할 때 발생하는 불량 발생빈도를 수집하기 위한 비용 매트릭스(Cost Metrix)를 설계한다. 그리고 경사하강법(Gradient Descent)을 이용하여 수명의 마감이 발생하는 경사도까지 남은 비용을 예측하는 방법을 제안한다. 마지막으로 시뮬레이션을 통해 임의의 불량이 발생했을 때 제안하는 방법을 통한 수명예측의 우수성을 증명했다.

한류형 반도체 교류 차단기 개발에 관한 연구 (A Study on Development of Current Limiting solid-state AC circuit Breaker)

  • 이우영;김용주
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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    • pp.73-77
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    • 1990
  • In this paper we describe the solid-state ac-circuit breaker which has the characteristic of both a half cycle circuit breaker and a current limiting circuit breaker. This circuit breaker has a current limiting resistor in order to surprises the fault current to a certain level and discharge the energe included in circuit inductor. We explain the effect of circuit parameter on transient phenomena of switch device by using EMTP and finally design the control circuit consisted synchronous closing circuit, over- current detecting circuit and sensing circuit of rate of rise of fault current.

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