• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.727-731
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• 2005

Design and manufacturing process of a full color LED microdislay fabricated by standard CMOS technology and containing an array of aluminum / nanostructured porous silicon reverse biased light emitting Schottky diodes will be discussed. Being of a solid state construction, this microdisplays are cost-effective, thin and light in weight due to very simple device architecture. Its benefits include also super high resolution, wide viewing angles, fast response time and wide operating temperature range. The advantages of full integration of an LED-array and driving circuitry onto a Si-chip will be also discussed.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1997.06a
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• pp.135-147
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• 1997

The production of light metal parts using aluminum is mainly performed by die casting and squeeze casting, which directly fabricate the required shape from the liquid state. However, die casting is subject to defects such as shrinkage porosity and air trapped when molten metal enters the cavity, whilst squeeze casting also has defects due to turbulent flow in the die cavity. Both diecasting and sqeeze casting have inhomogeneous mechanical property in terms of dendritic structure during solidification. Active research has been carried out on semi-solid processing, rather than on conventional process methods such as die casting, which involve various problems. Therefore in this paper, to introduce the fundamental technology for d e design, in die casting and forging process with semi-solid materials, relationship between stress and strain of semi-solid materials, and for producing parts die design has been proposed as parameters of globulization of the microstructure and gate shape. The prevention of various defects to produce sound parts are also introduced.

• Proceedings of the Korean Fiber Society Conference
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• 1998.10a
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• pp.232-235
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• 1998

ion conducting polymers have been extensively investigated because of their potential application as an electrolyte in solid state batteries [1]. Among the polymer electrolytes, solid polymer electrolytes (SPEs) composed of ion conducting polymer and alkali metal salt have many advantages such as high ionic conductivity, high energy density and light weight. This made them suitable replacement for liquid electrolytes. (omitted)

• Journal of Korea Society of Digital Industry and Information Management
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• v.5 no.4
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• pp.1-9
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• 2009

It establishes the nonlinear optics material recently on solid-state laser output side and from the infrared ray until is early has in the ultraviolet rays and the wavelength of broadband there makes be a possibility of getting the laser light which and in processing and measuring field it is widely used. Consequently, it used the pulse reiteration law from origination and nine as the fundamental wave direct plan it produced. intense it affixed the nonlinear optics material (KTP) in pulsed light and it got the green light. When inflicting a same energy in respectively reiteration mesh, intense interrelation of pulse light output and green light output between. It analyzed the conversion ratio which it follows in the mesh.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.36-39
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• 2000

A small electrical potential difference which appears on any solid body when subjected to illumination by a modulated light beam generated by laser is called photocharge voltage(PCV)[1,2]. This voltage is proportional to the induced change in the surface electrical charge and is capacitatively measured on various materials such as conductors, semiconductors, ceramics, dielectrics and biological objects. The amplitude of the detected signal depends on the type of material under investigation, and on the surface properties of the sample. In photocharge voltage spectroscopy measurements[3], the sample is illuminated by both a steady state monochromatic bias light and the pulsed laser. The monochromatic light is used to created a variation in the steady state population of trap levels in the surface and space charge region of semiconductor samples which does result in a change in the measured voltage. Using this technique the spatial variation of PCV can be utilized to evalulate the surface conditions of the sample and the variation of the PCV due to the monochromatic bias light are utilized to charactrize the surface states. A qualitative analysis of the proposed measuremen is present along with experimental results performed on amorphous silicon samples. The deposition temperature was varied in order to obtain samples with different structural, optical and electronic properties and measurements are related to the defect density in amorphous thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.36-39
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• 2000

A small electrical potential difference which appears on any solid body when subjected to illumination by a modulated light beam generated by laser is called photocharge voltage(PCV)[1,2]. This voltage is proportional to the induced change in the surface electrical charge and is capacitatively measured on various materials such as conductors, semiconductors, ceramics, dielectrics and biological objects. The amplitude of the detected signal depends on the type of material under investigation, and on the surface properties of the sample. In photocharge voltage spectroscopy measurements[3], the sample is illuminated by both a steady state monochromatic bias light and the pulsed laser. The monochromatic light is used to created a variation in the steady state population of trap levels in the surface and space charge region of semiconductor samples which does result in a change in the measured voltage. Using this technique the spatial variation of PCV can be utilized to evaluate the surface conditions of the sample and the variation of the PCV due to the monochromatic bias light are utilized to characterize the surface states. A qualitative analysis of the proposed measurement is present along with experimental results performed on amorphous silicon samples. The deposition temperature was varied in order to obtain samples with different structural, optical and electronic properties and measurements are related to the defect density in amorphous thin film.

• Journal of the Korean Society for Precision Engineering
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• v.13 no.7
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• pp.29-35
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• 1996

For semi-solid forging with aluminuim alloys, it is required to develope the globular grain structure. It was studide that cold upsetting ration in SIMA process has effect on the globularization of grain structure. Globular microstructure was generated without cold upsettings for commercial aluminium alloys. In the case of A12024, the range of grain size was 40 .approx. 50 .mu. m. The grain growth in growth in globular microstructure depend on heating time. Spur gear was forged in semi-solid state to investigate the forging condition for A12024 with hydraulic press.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1133-1137
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• 2005

In this paper, a renovated approach in the fabrication of red organic light-emitting diodes (OLEDs) is described. The hard-to-control doping process required for dopant-based red OLEDs can be avoided due to the novel red fluorophores that are not concentration quenching in solid state. Doping is in general a must for phosphorescence OLEDs because of the triplet-triplet annihilation, a common problem for phosphorophore dopants. However, we have recently found that extraordinary red iridium complex showing relatively short emission lifetime render the non-doped phosphorescence red OLED possible.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.481-485
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• 2003

To diffuse Zn at solid-state, the $SiO_2/ZnO/SiO_2$ wafers was made by PECVD and RF Spotter. Thicknesses of bottom $SiO_2$ and cap $SiO_2$ was about $500{\AA}$ and about $3500{\AA}$. First test was Diffusion temperatures were $760^{\circ}C$, $780^{\circ}C$, and $800^{\circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr and 2nd test was Diffusion temperatures were $760^{\circ}C$, $720^{\circ}C$, and $680^{\circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about $625{\sim}650\;nm$ and red color Main reason for Iv change was by diffusion temperature not diffusion time. The lower temperature was the higher Iv. We thick that these properties is because of the very high diffusion temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.346.2-346.2
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• 2014

To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.