• Journal of the Microelectronics and Packaging Society
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• v.18 no.2
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• pp.29-33
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• 2011

Research about the geometry design of lead pin was carried based on the normal or shear stress of the interface between a lead pin and a PCB in terms of delamination failure. The taguchi method with four design factors of three levels and FEA(Finite element Analysis) are carried under $20^{\circ}$ bending and 50 ${\mu}m$ tension of lead pin. The contact width, d2, between head round and copper pad in PCB is the highest affection factor among design factors by analysis of contribution analysis. Equivalent von Mises stress of 18.7% reduction design is obtained by the parameter design of the taguchi method. Maximum normal stress occurred at contact position between solder outer surface and a Cu pad in PCB. Also, maximum shear stress happened at contact position between solder outer surface and SR layer of PCB. From these calculated results, delamination of the PGA package may be occurred from outer interface of solder to inner interface of solder.

• Journal of the Korean institute of surface engineering
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• v.33 no.4
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• pp.241-250
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• 2000

Popcorn cracking phenomena frequently occur in thin plastic packages during the solder reflow process, which are definitely affected by poor adhesion of Cu-based leadframe to epoxy molding compounds (EMCs). In the present work, in order to enhance the adhesion strength, a brown-oxide treatment on the Cu-based leadframe was carried out and the adhesion strength of leadframe/EMC interface was measured in terms of fracture toughness by using sandwiched double-cantilever beam (SDCB) specimens. After the adhesion tests, fracture surfaces were analyzed by SEM, AES, EDS and AFM to make the failure path clear. Results showed that failure path was closely related to the oxidation time and the interfacial fracture toughness.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.167-174
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• 2005

Smaller size and higher integration of electronic components make smaller gap between metal conducting layers in electronic package. Under harsh environmental conditions (high temperature/humidity), electronic component respond to applied voltages by electrochemically ionization of metal and metal filament formation, which lead to short failure and this phenomenon is termed electrochemical migration(ECM). In this work, printed circuit board(PCB) is used for determination of ECM characteristics. Copper leads of PCB are soldered by eutectic solder alloys. Insulation breakdown time is measured at $85^{\circ}C,\;85{\%}RH$. CAF is the main mechanism of ECM at PCB. Pb is more susceptible to CAF rather than Sn, which corresponds well to the corrosion resistance of solder materials in aqueous environment. Polarization tests in chloride or chloride-free solutions fur pure metal and eutectic solder alloys are performed to understand ECM characteristics. Lifetime results show well defined log-normal distribution which resulted in biased voltage factor(n=2) by voltage scaling. Details on migration mechanism and lifetime statistics will be presented and discussed.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.195-202
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• 2003

In this study, failure mechanisms of Au stud bumps/ACF flip chip joints were investigated underhigh current stressing condition. For the determination of allowable currents, I-V tests were performed on flip chip joints, and applied currents were measured as high as almost 4.2Amps $(4.42\times10^4\;Amp/cm^2)$. Degradation of flip chip joints was observed by in-situ monitoring of Au stud bumps-Al pads contact resistance. All failures, defined at infinite resistance, occurred at upward electron flow (from PCB pads to chip pads) applied bumps (UEB). However, failure did not occur at downward electron flow applied bumps (DEB). Only several $m\Omega$ contact resistance increased because of Au-Al intermetallic compound (IMC) growth. This polarity effect of Au stud bumps was different from that of solder bumps, and the mechanism was investigated by the calculation of chemical and electrical atomic flux. According to SEM and EDS results, major IMC phase was $Au_5Al_2$, and crack propagated along the interface between Au stud bump and IMC resulting in electrical failures at UEB. Therefore. failure mechanisms at Au stud bump/ACF flip chip Joint undo high current density condition are: 1) crack propagation, accompanied with Au-Al IMC growth. reduces contact area resulting in contact resistance increase; and 2) the polarity effect, depending on the direction of electrons. induces and accelerates the interfacial failure at UEBs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.265-271
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• 2008

TCP(Tape Carrier Package), COG (Chip On Glass), COF(Chip On Film) are three methods for connecting LDI(LCD Driver IC) with LCD panels. Especially COF is growing its portion of market place because of low cost and fine pitch correspondence. But COF has a problem of the lead broken failure in LCD module process and the usage of customer. During PCB (Printed Circuit Board) bonding process, the mismatch of the coefficient of thermal expansion between PCB and D-IC makes stress-concentration in COF lead, and also D-IC bending process during module assembly process makes the level of stress in COF lead higher. As an affecting factors of lead-broken failure, the effects of SR(Solder Resister) coating on the COF lead, surface roughness and grain size of COF lead, PI(Polyimide) film thickness, lead width and the ACF(Anisotropic Conductive Film) overlap were studied, The optimization of these affecting manufacturing processes and materials were suggested and verified to prevent the lead-broken failure.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.1-5
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• 2012

Long-term reliability of Si photovoltaic modules is a crucial issue for the cost-reduction on the power-supply system. To elevate this reliability, several environmental tests have been created as qualification and certification procedures. This paper gives an overview about recent researches of reliability tests for Si photovoltaic modules.

• Journal of the Korean Society of Safety
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• v.8 no.4
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• pp.16-20
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• 1993

The combined effect of increased pressure/temperature and the reduced material thicknesses act to increase the stress on the radiator componets. The design life of the radiator is influenced by the cyclic stresses and corrosion, which act to weaken the materials, radiator mechanical failure occurs when a tube or solder Joint ruptures, causing coolant loss or insufficient heat rejection. Therefore, in this study, through strain measurement of the tubes in copper/brass radiator, the strain distribution of the tubes in radiator as function of temperature and pressure is obtained.

• Corrosion Science and Technology
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• v.22 no.3
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• pp.153-163
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• 2023

Two types of accelerated tests, Water Drop Test (WDT) and Temperature-Humidity-Bias Test (THBT), can be used to evaluate the susceptibility to electrochemical migration (ECM). In the WDT, liquid water is directly applied to a specimen, typically a patterned conductor like a printed circuit board. Time to failure in the WDT typically ranges from several seconds to several minutes. On the other hand, the THBT is conducted under elevated temperature and humidity conditions, allowing for assessment of design and life cycle factors on ECM. THBT is widely recognized as a more suitable method for reliability testing than WDT. In both test methods, localized corrosion can be observed on the anode. Composition of dendrites formed during the WDT is similar to that formed during THBT. However, there is a lack of correlation between the time to failure obtained from WDT and that obtained from THBT. In this study, we investigated the relationship between electrochemical parameters and time to failure obtained from both WDT and THBT. Differences in time to failure can be attributed to actual anode potential obtained in the two tests.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.18 no.4
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• pp.362-368
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• 2009

In general, circuit board assemblies experience various mechanical loadings during assembly and in actual use. The repeated cyclic bending can cause electrical failures due to circuit board cracks, solder interconnects cracks, and the component cracks. In this paper, we report on the failure characteristics of semiconductor chips under the repeated cyclic bending. We first describe a new 4-point bending tester, which is developed according to JEDEC standard No. 22B113. The performance of the tester is then estimated through actual experiments. Test results reveal that the cracks first occur on the outer balls around 20,000 cycles and gradually propagate to the inner balls where cracks are found around 70,000 cycles.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.3 s.40
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• pp.1-8
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• 2006

Higher density integration and adoption of new materials in advanced electronic package systems result in severe electrochemical reliability issues in microelectronic packaging due to higher electric field under high temperature and humidity conditions. Under these harsh conditions, metal interconnects respond to applied voltages by electrochemical ionization and conductive filament formation, which leads to short-circuit failure of the electronic package. In this work, in-situ water drop test and evaluation of corrosion characteristics for SnPb solder alloys in D.I. water and NaCl solutions were carried out to understand the fundamental electrochemical migration characteristics and to correlate each other. It was revealed that electrochemical migration behavior of SnPb solder alloys was closely related to the corrosion characteristics, and Pb was primarily ionized in both D.I. water and $Cl^{-}$ solutions. The quality of passive film formed at film surface seems to be critical not only for corrosion resistance but also for ECM resistance of solder alloys.