• 한국재료학회지
• /
• 제27권4호
• /
• pp.211-215
• /
• 2017

Reactive Ion Etching (RIE) and wet etching are employed in existing texturing processes to fabricate solar cells. Laser etching is used for particular purposes such as selective etching for grooves. However, such processes require a higher level of cost and longer processing time and those factors affect the unit cost of each process of fabricating solar cells. As a way to reduce the unit cost of this process of making solar cells, an atmospheric plasma source will be employed in this study for the texturing of crystalline silicon wafers. In this study, we produced the atmospheric plasma source and examined its basic properties. Then, using the prepared atmospheric plasma source, we performed the texturing process of crystalline silicon wafers. The results obtained from texturing processes employing the atmospheric plasma source and employing RIE were examined and compared with each other. The average reflectance of the specimens obtained from the atmospheric plasma texturing process was 7.88 %, while that of specimens obtained from the texturing process employing RIE was 8.04 %. Surface morphologies of textured wafers were examined and measured through Scanning Electron Microscopy (SEM) and similar shapes of reactive ion etched wafers were found. The Power Conversion Efficiencies (PCE) of the solar cells manufactured through each process were 16.97 % (atmospheric plasma texturing) and 16.29 % (RIE texturing).

• Current Applied Physics
• /
• 제18권12호
• /
• pp.1592-1599
• /
• 2018

The present study deals with the effect of dual cathode buffer layer (CBL) on the performance of bilayer of 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine] (TAPC) and fullerene (C70)-based organic solar cell (OSC) with low donor concentration. OSC devices with CBLs have been fabricated using thermal vapor deposition technique. We report the use of lithium fluoride (LiF) and molybdenum trioxide ($MoO_3$) as CBLs. The insertion of LiF between C70 and aluminium (Al) electrode enhances the power conversion efficiency (PCE) of device from 1.89% to 2.47% but quenching of photogenerated excitons is observed at interface of C70 and LiF layers. Incorporation of $MoO_3$ between LiF and Al electrode further enhances PCE of device to 3.51%. This has also improved the material quality and device properties, by preventing the formation of gap states and diminishing exciton quenching.

• 천문학회지
• /
• 제47권6호
• /
• pp.201-207
• /
• 2014

We report the development of solar flux receivers operating at 2.8 GHz to monitor solar radio activity. Radio waves from the sun are amplified, filtered, and then transmitted to a power meter sensor without frequency down-conversion. To measure solar flux, a calibration scheme is designed with a noise source, an ambient load, and a hot load at $100^{\circ}C$. The receiver is attached to a 1.8 m parabolic antenna in Icheon, owned by National Radio Research Agency, and observation is being conducted during day time on a daily basis. We compare the solar fluxes measured for last seven months with solar fluxes obtained by DRAO in Penticton, Canada, and by the Hiraiso solar observatory in Japan, and finally establish equations to convert observed flux to the so-called Penticton flux with an accuracy better than 3.2 sfu.

• 천문학회보
• /
• 제32권1호
• /
• pp.24.2-24.2
• /
• 2007

• 천문학회보
• /
• 제37권2호
• /
• pp.111.2-111.2
• /
• 2012

We observed an Ellerman bomb(EB) and its associated surge using the Fast Imaging Solar Spectrograph(FISS) and the broadband TiO filter of the 1.6 meter New Solar Telescope at Big Bear Solar Observatory. As is well-known, the EB appears as a feature that is very bright at the far wings of the H alpha line. The lambdameter method applied to these wings indicates that the EB is blue-shifted up to 6km/s in velocity. In the photospheric level below the EB, we see rapidly growing "granule-like" feature. The transverse velocity of the dark lane at the edge of the "granule" increased with time as reached a peak of 6km/s, at the time of the EB's occurrence. The surge was seen in absorption and varied rapidly both in the H alpha and the Ca II 8542 line. It originated from the Ellerman bomb, and was impulsively accelerated to 20km/s toward us(blueshift). Then the velocity of the surge gradually changed from blueshift of 20km/s to redshift of 40km/s. By adopting the cloud model, we estimated the temperature of the surge material at about 27000K and the non-thermal velocity at about 10km/s. Our results shed light on the conventional idea that an EB results from the magnetic reconnection of an emerging flux tube and pre-existing field line.

• Advances in nano research
• /
• 제1권1호
• /
• pp.43-58
• /
• 2013

Zinc oxide (ZnO) is a unique semiconductor material that exhibits numerous useful properties for dye-sensitized solar cells (DSSCs) and other applications. Various thin-film growth techniques have been used to produce nanowires, nanorods, nanotubes, nanotips, nanosheets, nanobelts and terapods of ZnO. These unique nanostructures unambiguously demonstrate that ZnO probably has the richest family of nanostructures among all materials, both in structures and in properties. The nanostructures could have novel applications in solar cells, optoelectronics, sensors, transducers and biomedical sciences. This article reviews the various nanostructures of ZnO grown by various techniques and their application in DSSCs. The application of ZnO nanowires, nanorods in DSSCs became outstanding, providing a direct pathway to the anode for photo-generated electrons thereby suppressing carrier recombination. This is a novel characteristic which increases the efficiency of ZnO based dye-sensitized solar cells.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.489-489
• /
• 2011

The effect of Si quantum dots for solar cell appications was investigated. The 5 ~ 10 nm Si nanoparticle was fabricated on p-type single and poly crystalline wafer by magnetron sputtering and laser irradiation process. Scanning electron microscopy (SEM), atomic force measurement (AFM) and transmission electron microscopy (TEM) images showed that the Si QDs array were clearly embedded in insulating layer ($SiO_2$). Photoluminesence (PL) measurements reliably exhibited bandgap transitions with every size of Si QDs. The photo-current measurements were showed different result with size of QD and number of superlattice.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2008년도 제34회 동계학술대회 초록집
• /
• pp.251-251
• /
• 2008

• 천문학회보
• /
• 제27권1호
• /
• pp.38-38
• /
• 2002

• 신재생에너지
• /
• 제9권2호
• /
• pp.30-39
• /
• 2013

Multi-crystalline silicon solar cells is not exist a specific crystal direction different from single crystalline silicon solar cells. In functional materials, therefore, isotropic wet etching of mc-Si solar cell is easy the acid solution rather than the alkaline solution. The reflectance of wet texturing process is about 25% and the reflectance of RIE texturing process is achieved less than 10%. In addition, wet texturing has many disadvantages as well as reflectance. So wet texturing process has been replaced by a RIE texturing process. In order to apply BIPV, RIE and wet textured multi-crystalline silicon solar cell modules was manufactured by different kind of EVA sheet. Moreover, in case of BIPV, the short circuit current characteristics according to the angle of incidence is more important, because the installation of BIPV is fixed location. In this study, we has measured SEM image and I-V curve of RIE and wet textured silicon solar cell and PV module. Also we has analyzed quantum efficiency characteristics of RIE and wet textured silicon solar cell for PV modules depending on incidence angle.