• Title/Summary/Keyword: Solar physics

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IMPROVED CALCULATION OF NON-FUSION SOLAR NEUTRINOS PRODUCED BY RUBAKOV EFFECTS

  • LEE HAESHIM;LEE HOYUN;KOH YOON SUK
    • Journal of The Korean Astronomical Society
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    • v.26 no.1
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    • pp.79-81
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    • 1993
  • We calculated the solar monopole abundance limit by comparing the observed solar neutrino flux and the calculation of non-fusion solar neutrino flux produced by Rubakov process in the solar core. We included the produced meson's enhancement effects by the surrounding ions in the solar core. We find that the monopole number $N_M<1.9\times10^{20}(1mb/{\sigma}0)$, where ${\sigma}0$ is the characteristic proton decay cross section of Rubakov process. This is similar or stronger than strong limits obtained from neutron star's luminosity.

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Electrical Characterization of Cu(InxGa1-x)(SySe2-y) Thin Film Solar Cells

  • Kim, Dahye;Kim, Ji Eun;Cho, Yunae;Kim, Dong-Wook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.464.1-464.1
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    • 2014
  • Among numerous material candidates, Cu(InxGa1-x)(SySe2-y) (CIGS) thin films have emerged as promising material candidates for thin film solar cell applications due to the high energy conversion efficiency and relatively low fabrication cost. The CIGS thin film solar cells consist of several materials, including Mo back contacts, ZnO-based window layers, and CdS buffer layers. All these materials have different crystal structures and contain quite distinct chemical elements, and hence the device characterization requires careful analyses. Most of all, identification of the major trap states resulting in the carrier recombination processes is a key step toward realization of high efficiency CIGS solar cells. We have carried out electrical investigations of CIGS thin film solar cells to specify the major trap states and their roles in photovoltaic performance. In particular, we have used the temperature-dependent transport characterizations and admittance spectroscopy. In this presentation, we will introduce some exemplary studies of DC and AC electrical characteristics of the CIGS solar cells.

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ROAD MAP OF SOLAR-TERRESTRIAL PROGRAMS IN THE USA

  • POLAND A.I.
    • Journal of The Korean Astronomical Society
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    • v.36 no.spc1
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    • pp.151-154
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    • 2003
  • During the past decade the world solar physics community has made significant progress in understanding the Sun and its interaction with the heliosphere and Earth's magnetosphere. NASA in coordination and cooperation with many other countries has had impressive results with the SOHO, YOHKOH, POLAR, GEOTAIL, etc spacecraft. These successes have given us a sound foundation to proceed into the new century. The two current main efforts in the U.S. are the Solar Terrestrial Probes (STP) and Living With A Star (LWS) programs. The STP program is basically science driven with new missions being selected on the basis of basic science discovery. The LWS program is focused on understanding the basic physics of solar variability and its effects on Earth systems. The current plans for these two programs are discussed.

Influence of the Thickness and Doping Concentration in p- and n-Type Poly-Si Layers on the Efficiency of a Solar Cell Based on a Carbon Fiber

  • Yoon, Min-Seok;Shim, Young Bo;Han, Young-Geun
    • Journal of the Optical Society of Korea
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    • v.19 no.2
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    • pp.199-205
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    • 2015
  • We investigated the effects of the thickness and doping concentration in p- and n-type poly-Si layers on the performance of a solar cell based on a carbon fiber in order to improve the energy conversion efficiency of the cell. The short-circuit current density and open-circuit voltage of the carbon fiber-based solar cell were significantly influenced by the thickness and doping concentration in the p- and n-type poly-Si layers. The solar cell efficiency was successfully enhanced to ~10.5%.

Inverted structure perovskite solar cells: A theoretical study

  • Sahu, Anurag;Dixit, Ambesh
    • Current Applied Physics
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    • v.18 no.12
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    • pp.1583-1591
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    • 2018
  • We analysed perovskite $CH_3NH_3PbI_{3-x}Cl_x$ inverted planer structure solar cell with nickel oxide (NiO) and spiroMeOTAD as hole conductors. This structure is free from electron transport layer. The thickness is optimized for NiO and spiro-MeOTAD hole conducting materials and the devices do not exhibit any significant variation for both hole transport materials. The back metal contact work function is varied for NiO hole conductor and observed that Ni and Co metals may be suitable back contacts for efficient carrier dynamics. The solar photovoltaic response showed a linear decrease in efficiency with increasing temperature. The electron affinity and band gap of transparent conducting oxide and NiO layers are varied to understand their impact on conduction and valence band offsets. A range of suitable band gap and electron affinity values are found essential for efficient device performance.

Observations of Solar Filaments with Fast Imaging Solar Spectrograph of the 1.6 meter New Solar Telescope at Big Bear Solar Observatory

  • Song, Dong-Uk;Park, Hyung-Min;Chae, Jong-Chul;Yang, Hee-Su;Park, Young-Deuk;Nah, Ja-Kyoung;Cho, Kyung-Suk;Jang, Bi-Ho;Ahn, Kwang-Su;Cao, Wenda;Goode, Philip R.
    • The Bulletin of The Korean Astronomical Society
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    • v.36 no.2
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    • pp.88.2-88.2
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    • 2011
  • Fast Imaging Solar Spectrograph (FISS) is an instrument developed by Seoul National University and Korea Astronomy and Space Science Institute and installed at the 1.6 meter New Solar Telescope of Big Bear Solar Observatory. Using this instrument, we observed solar filaments and analyzed the data focusing on determining the temperature and non-thermal velocity. We inferred the Doppler absorption widths of $H{\alpha}$ and Ca II 8542$\bar{A}$ lines from the line profiles using the cloud model. From these values, we separately determined temperature and non-thermal velocity. Our first result came from a solar filament observed on 2010 July 29th. Temperature inside a small selected region of this ranges from 4500K to 12000K and non-thermal velocity, from 3.5km/s to 7km/s. We also found temperature varied a lot with time. For example temperature at a fixed point varied from 8000K to 18000K for 40 minutes, displaying an oscillating pattern with a period of about 8 minutes and amplitude of about 2000K. We will also present new results from filaments observed in 2011 summer.

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대기압 플라즈마 소스로 식각한 Wafer 반사율 분석

  • Gwon, Hui-Tae;Lee, Ye-Seul;Hwang, Sang-Hyeok;Jo, Tae-Hun;Yang, Chang-Sil;Gwon, Gi-Cheong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.403.1-403.1
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    • 2016
  • 일반적으로 실리콘 태양전지의 표면 텍스쳐링 공정방식은 습식 텍스쳐링 방식과 건식 텍스쳐링 방식 2가지로 나뉘어진다. 하지만 현재 습식 텍스쳐링 방식의 경우 Solution을 사용하기 때문에 폐용액으로 인한 환경오염 및 Wafer 오염과 같은 단점을 가지고 있다. 또한 건식 텍스쳐링 방식의 경우는 진공 상태에서 진행되므로 높은 유지 비용이 가장 큰 단점으로 대두 되고 있다. 그러므로 기존의 방식과 다르게 진공을 사용하지 않는 대기압 플라즈마 소스를 텍스쳐링 공정에 적용하였다. 본 연구에서는 대기압 플라즈마 소스로 식각한 Wafer의 반사율을 가스 종류와 유량별 측정하여 분석하였다. 측정된 반사율을 통해 대기압 플라즈마 소스가 텍스쳐링 공정에 적용할 수 있는지 확인하였다.

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Fabrication of Highly Stable a-Si:H Solar Cells (안정성이 높은 수소화된 비정질 실리콘 태양전지의 제작)

  • Kim, Tae-Gon;Park, Kyu-Chang;Kim, Sung-Chul;Jang, Jin
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.3
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    • pp.66-71
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    • 1992
  • We fabricated highly stable a-Si:H solar cell using low band gap intrinsic layer fabricated by RP-CVD. We obtained a-Si:H with optical band gap of less than 1.65 eV with deposition rate of 0.18 $\AA$/sec, and used this material as bottom i-layer of a-Si:H double stacked solar cells. We have succeeded in the fabrication of very stable a-Si:H double stacked solar cell of which the conversion efficiency is about 9% and the degradation is less than 4% after light illumination for 100h under 350mW/cm$^{2}$.

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The Study of the Fabrication and Characteristics of $n-CdS_{0.46}Se_{0.54}/p-Cu_{2-X}S_{0.46}Se_{0.54}$ heterojunction Solar Cells ($n-CdS_{0.46}Se_{0.54}/p-Cu_{2-X}S_{0.46}Se_{0.54}$ 이종접합 태양전지의 제작과 그 특성에 관한 연구)

  • You, Sang-Ha;Choi, Seung-Pyung;Lee, Sang-Youl;Hong, Kwang-Joon;Suh, Sang-Suhg;Kim, Hye-Suk;Jeon, Seung-Yong;Yun, Eun-Hee;Moon, Jong-Dae;Shin, Yeong-Jin;Jeong, Tae-Soo;Shin, Hyun-Keel;Kim, Tack-Sung;Rheu, Kee-Soo
    • Solar Energy
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    • v.13 no.1
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    • pp.49-58
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    • 1993
  • [ $CdS_{0.46}Se_{0.54}$ ] single crystal was grown by a sublimation method. The crystal structure and the temperature dependence of carrier density and mobility of $CdS_{0.46}Se_{0.54}$ single crystal were studied. Heterojunction solar cells of $n-CdS_{0.46}Se_{0.54}/p-Cu_{2-X}S_{0.46}Se_{0.54}$ were fabricated by the substitution reaction. The spectral response, the J-V characteristics and the conversion efficiency of the $n-CdS_{0.46}Se_{0.54}/p-Cu_{2-X}S_{0.46}Se_{0.54}$ heterojunction solar cells were studied. The open-circuit voltage, short-circuit density, fill factor and conversion efficiency of $n-CdS_{0.46}Se_{0.54}/p-Cu_{2-X}S_{0.46}Se_{0.54}$ heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.48V, $21mA/cm^2$, 0.75 and 9.5%, respectively.

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