• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 춘계학술발표대회 논문집
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• pp.214-219
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• 2009

In high-efficiency crystalline silicon solar cells, If high-efficiency solar cells are to be commercialized. It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper and Silver are applied widely in various electronic manufactures as easily formation is available by plating. The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposite the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 14.68 % on $0.2{\sim}0.6{\Omega}{\cdot}cm,\;20{\times}20mm^2$, CZ(Czochralski) wafer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.239.2-239.2
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• 2016

Numerous studies and approaches have been performed for solar cells to improve their photoelectric conversion efficiencies. Among them, the study for electrode containing transparent conducting oxide (TCO) layers is one of issues as well as for the cell structure based on band theory. In this study, we focused on an interfacial layer between p-type silicon and indium tin oxide (ITO) well-known as TCO materials. According to current-voltage characteristics for the sample with the interfacial layers, the improvement of band alignment between p-type silicon and ITO was observed, and their ohmic properties were enhanced in the proper condition of deposition. To investigate cause of this improvement, spectroscopic ellipsometry and ultraviolet photoelectron spectroscopy were utilized. Using these techniques, band alignment and defect in the band gap were examined. The major materials of the interfacial layer are vanadium oxide and tungsten oxide, which are notable as a hole transfer layer in the organic solar cells. Finally, the interfacial layer was applied to silicon solar cells to see the actual behavior of carriers in the solar cells. In the case of vanadium oxide, we found 10% of improvement of photoelectric conversion efficiencies, compared to solar cells without interfacial layers.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.138-138
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• 2009

Recently, thin-film solar cells of Cu(In,Ga)$Se_2$(CIGS) have reached a high level of performance, which has resulted in a 19.9%-efficient device. These conventional devices were typically fabricated using chemical bath deposited CdS buffer layer between the CIGS absorber layer and ZnO window layer. However, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. It is why during last decades many efforts have been provided to achieve high efficiency Cd-free CIGS solar cells. In order to alternate CdS buffer layer, ZnS buffer layer is grown by using chemical bath deposition(CBD) technique. The thickness and chemical composition of ZnS buffer layer can be conveniently by varying the CBD processing parameters. The processing parameters were optimized to match band gap of ZnS films to the solar spectrum and exclude the creation of morphology defects. Optimized ZnS buffer layer showed higher optical transmittance than conventional thick-CdS buffer layer at the short wavelength below ~520 nm. Then, chemically deposited ZnS buffer layer was applied to CIGS solar cell as a alternative for the standard CdS/CIGS device configuration. This CIGS solar cells were characterized by current-voltage and quantum efficiency measurement.

• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.442-453
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• 2023

Tandem or multijunction solar cells (MJSCs) can convert sunlight into electricity with higher efficiency (η) than single junction solar cells (SJSCs) by dividing the solar irradiance over sub-cells having distinct bandgaps. The efficiencies of various common SJSC materials are close to the edge of their theoretical efficiency and hence there is a tremendous growing interest in utilizing the tandem/multijunction technique. Recently, III-V materials integration on a silicon substrate has been broadly investigated in the development of III-V on Si tandem solar cells. Numerous growth techniques such as heteroepitaxial growth, wafer bonding, and mechanical stacking are crucial for better understanding of high-quality III-V epitaxial layers on Si. As the choice of growth method and substrate selection can significantly impact the quality and performance of the resulting tandem cell and the terminal configuration exhibit a vital role in the overall proficiency. Parallel and Series-connected configurations have been studied, each with its advantage and disadvantages depending on the application and cell configuration. The optimization of both growth mechanisms and terminal configurations is necessary to further improve efficiency and lessen the cost of III-V on Si tandem solar cells. In this review article, we present an overview of the growth mechanisms and terminal configurations with the areas of research that are crucial for the commercialization of III-V on Si tandem solar cells.

• 한국전기전자재료학회논문지
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• 제37권2호
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• pp.182-187
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• 2024

Currently, the most developed new energy source is solar energy. Because solar power is installed outside, it is exposed to many pollutants. Pollutants are causing the characteristics of solar energy to deteriorate. Therefore, this study aims to develop a water-repellent coating to prevent contamination of solar modules. Silica and Titania materials are mainly used as water-repellent coating materials. In this study, it was based on silica and the contact angle characteristics were measured according to the change in the amount of silica and ammonia water added and the number of coatings. As a result of the measurement, it was confirmed that the contact angle was more than 60 degrees when 0.5 mol of TEOS was added to 50 mL and 0.15 M when 1 mL of ammonia water was added to 296.47 ml of distilled water. And it was confirmed that the contact angle improved when the number of coatings was applied twice. A water-repellent coating material was applied to low iron tempered glass used to protect dye-sensitized solar cell modules. The characteristics of the module were measured after spraying DI-Water on low-emission tempered glass with a water-repellent coating. As a result of the measurement, the efficiency of the module without application, the efficiency of the module coated once, and the module coated twice were 4.87%, 4.90%, and 4.91%, respectively. It was confirmed that the efficiency of the module increased by applying water-repellent coating. As a result of this study, it is determined that the water-repellent coating material will help improve solar power generation efficiency and lifespan by being self-cleaning and non-reflective.

• Korean Chemical Engineering Research
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• 제57권4호
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• pp.519-524
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• 2019

스테인리스 스틸을 사용한 태양전지는 효율성이 낮지만, 패시배이션을 방지하는 목적의 추가적인 막을 설치하지 않아도 되는 장점을 가지고 있다. 본 연구에서는 스테인리스 스틸을 기반으로 하는 a-Si:H 박막 태양전지 제조에 고분자 재료인 실리콘 수지를 도입하였다. 실리콘 수지의 사용 목적은 스틸표면의 평탄화와 전기 절연성을 도입하는 것이다. 초기 공정에서, 스테일리스 스틸의 표면에 실리콘 수지를 스핀코팅을 통해 $2{\sim}3{\mu}m$ 두께로 코팅하였다. 이후 증착법을 이용하여 알루미늄 박막 코팅을 시도하였다. 알루미늄 증착시, 마이크로미터 크기의 실리콘 수지 표면위에 버클링이 형성되었다. 형성된 실리콘 수지 위로 반도체층 도입 등 추가적인 박막 공정을 실시하였으며, 박막층에 유지된 버클링은 광산란 효과를 증가시켜 태양전지의 효율 향상으로 연계되었음을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.196.2-196.2
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• 2015

There are various issues fabricating the successful and efficient solar cell structures. One of the most important issues is band alignment technique. The solar cells make the carrier in their active region over the p-n junction. Then, electrons and holes diffuse by minority carrier diffusion length. After they reach the edge of solar cells, there exist large energy barrier unless the good electrode are chosen. Many various conductor with different work functions can be selected to solve this energy barrier problem to efficiently extract carriers. Tungsten oxide has large band gap known as approximately 3.4 eV, and usually this material shows n-type property with reported work function of 6.65 eV. They are extremely high work function and trap level by oxygen vacancy cause them to become the hole extraction layer for optical devices like solar cells. In this study, we deposited tungsten oxide thin films by sputtering technique with various sputtering conditions. Their electrical contact properties were characterized with transmission line model pattern. The structure of tungsten oxide thin films were measured by x-ray diffraction. With x-ray photoelectron spectroscopy, the content of oxygen was investigated, and their defect states were examined by spectroscopic ellipsometry, UV-Vis spectrophotometer, and photoluminescence measurements.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.376-376
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• 2011

I-III-VI2 chalcopyrite compounds, particularly copper, indium, gallium selenide(Cu(InxGa1-x)Se2, CIGS), are effective light-absorbing materials in thin-film solar application. They are direct band-gap semiconductors with correspondingly high optical absorption coefficients. Also they are stable under long-term excitation. CIS (CIGS) solar cell reached conversion efficiencies as high as 19.5%. Several methods to prepare CIS (CIGS) absorber films have been reported, such as co-evaporation, sputtering, selenization, and electrodeposition. Until now, co-evaporation is the most successful technique for the preparation of CIS (CIGS) in terms of solar efficiency, but it seems difficult to scale up. CIS solar cells have been hindered by high costs associated with a fabrication process. Therefore, inorganic colloidal ink suitable for a scalable coating process could be a key step in the development of low-cost solar cells. Here, we will present the preparation of CIS photo absorption layer by a solution process using novel metal precursors. Chalcopyrite copper indium diselenide (CuInSe2) nanocrystals ranging from 5 to 20nm in diameter were synthesized by arrested precipitation in solution. For the fabrication of CIS photo absorption layer, the CuInSe2 colloidal ink was prepared by dispersing in organic solvent and used to drop-casting on molybdenum substrate. We have characterized the nanoparticless and CIS layer by XRD, SEM, TEM, and ICP.

• EDISON SW 활용 경진대회 논문집
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• 제4회(2015년)
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• pp.320-323
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• 2015

본 연구에서는 18 atoms unit cell graphene film을 기반으로 한 graphene/h-BN heterostructure의 bandgap 변화에 대해 EDISON LCAODFTLab simulator의 DFT기반 전자구조계산을 통해 알아보았다. Graphene 상에 BN-doping 형태로 주어진 여러 heterostructure의 전자구조계산을 통해 태양전지의 이론적 최적효율을 나타내는 1.2eV 정도의 값을 갖는 구조를 찾을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.87.2-87.2
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• 2015

Transparent conductors are commonly used in photoelectric devices, where the electric energy converts to light energy or vice versa. Energy consumption devices, such as LEDs, Displays, Lighting devices use the electrical energy to generate light by carrier recombination. Meanwhile, solar cell is the only device to generate electric energy from the incident photon. Most photoelectric devices require a transparent electrode to pass the light in or out from a device. Beyond the passive role, transparent conductors can be employed to form Schottky junction or heterojunction to establish a rectifying current flow. Transparent conductor-embedded heterojunction device provides significant advantages of transparent electrode formation, no need for intentional doping process, and enhanced light-reactive surface area. Herein, we present versatile applications of transparent conductors, such as NiO, ZnO, ITO in photoelectric devices of solar cells and photodetectors for high-performing UV or IR detection. Moreover, we also introduce the growth of transparent ITO nanowires by sputtering methods for large scale application.