• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.193-193
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• 2011

To obtain ceramic films, the sol-gel coating technique has been broadly used with heat treatment, but crack formation tend to occur during heat treatment in thick sol-gel films. We prepared PZT thin films by sol-gel method with single-step spin coating process. The PZT solution have been synthesized using lead acetate ($Pb(CH_3COO)_2$), zirconium acetylacetonate ($Zr(OC_3H_7^n)_4$), and titanium diisopropoxide bis(acetylacetonate) 75wt% in isopropanol ($Ti(OC_3H_7^i)_2(OC_3H_7^n)_2$) as starting materials and n-propanol was selected as a solvent. The poly(vynilpyrrolidone) (PVP) was added with 0, 0.25, 0.5, 0.75, and 1 molar ratios to control viscosity of solution. We investigated influence of the viscosity on thickness, microstructure, and electrical properties of final PZT films. Thermo-gravimetric analysis and differential scanning calorimeter (TGA/DSC) was carried out from room temperature to $800^{\circ}C$ in order to measure pyrolysis temperature. Structural characteristics were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Ferroelectric and dielectric properties were measured by RT66A (Radiant) and impedance analyzer (Agilent), respectively. The thicknesses of PZT films depended on incorporation of an excess amount of PVP. Finally, we obtained PZT films of good quality without crack formation via single-step spin coating.

• Journal of Sensor Science and Technology
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• v.11 no.6
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• pp.327-334
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• 2002

Fine particles of $SnO_2$ were fabricated by the sol-gel powder processing using tine(II) chloride dihydrate($SnCl_2{\cdot}2H_2O$) and ethanol($C_2H_5OH$) as raw materials. The powders were investigated about the properties and electrical sensing. Gel powders were fabricated by drying of sol at $120^{\circ}C$ after aging 72hrs and 168hrs. The amount of $SnO_2$ phase was increased below $600^{\circ}C$ due to the elimination of volatile components, and the $SnO_2$ phase was almost completed by the heat treatment at $700^{\circ}C$ for 30min. The grain sizes were about 30nm below $700^{\circ}C$, and it showed the narrow distribution of the grain sizes. The specimens to measure electrical properties were fabricated by the thick film screen printing technique on the alumina substrates. The conductance of $SnO_2$ was showed the intrinsic behaviour of semiconducting ceramics above at $450^{\circ}C$. The constant conductance was observed in the temperature range of $200{\sim}450^{\circ}C$. The sensing properties of response time, recovery, and sensitivity of CO were improved with aging time.

• Journal of the Korean Ceramic Society
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• v.45 no.5
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• pp.303-308
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• 2008

Mullite precursors were synthesized with aluminosilicate gels from mixture of aluminum nitrate and sodium orthosilicate by the geopolymer technique at ambient temperature. Then, the gel was heat-treated in air up to $1200^{\circ}C$ at intervals of $100^{\circ}C$. Raw and heat-treated gels were characterized by TG-DTA, XRD, FTIR, $^{29}Si$ MAS-NMR, TEM. The result to examine the crystallization of behavior though DTA, the synthesized precursors were crystallized in the temperature range from $950^{\circ}C$ to $1050^{\circ}C$. The XRD results showed that the gel compositions were begun to crystallize at various temperature. Also, it was found that the precursors of M-4 begun to crystallize at about $950^{\circ}C$. The M-4 XRD peaks were characterized better than $M-1{\sim}M-3$ at $1000^{\circ}C$. The formation temperature of mullite in this study is much lower than that of previous sol-gel methods, which crystallized at up of $1200^{\circ}C$. TEM investigations revealed that the sample with 10 nm particle size was obtained via heat-treated at $1000^{\circ}C$ for M-4.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.13-18
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• 2004

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrodes were prepared on ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) thin films by spin coating method using photosensitive sol-gel solution. Self-patterning technique of photosensitive sol-gel solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. Lanthanum(III) 2-methoxyethoxide, Stronitium diethoxide. Cobalu(II)2-methoxyethoxide were used as starting materials for LSCO electrode. UV irradiation on LSCO thin films lead to decrease solubility by M-O-M bond formation and the solubility difference allows us to obtain self-patternine. There was little composition change of the LSCO thin films between before leaching and after leaching in 2-methoxyethanol. The lowest resistivity of LSCO thin films deposited on $SiO_2$/Si substrate was $1.1{\times}10^{-2}{\Omega}cm$ when the thin film was ennealed at $740^{\circ}C$. The values of Pr/Ps and 2Pr of LSCO/SBT/Pt capacitor on the applied voltage of 5V were 0.51, 8.89 ${\mu}C/cm^2$, respectively.

• Journal of Powder Materials
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• v.8 no.3
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• pp.201-206
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• 2001

$>LaMnO_3$$(La, Sr)MO_3$, and $(La, Sr)MO_3/YSZ$ gel films were deposited by spin-coating technique on scandium-doped zirconia (YSZ) substrate using the precursor solution prepared from $La(O-i-C_3H_7)_3$, $Co(CH_3COO)_2$or $Mn(O-i-C_3H_7)_2$,2-methoxyethanol, and polyethylene glycol. By heat-treating the gel films, the electrochemical cells, $(La, Sr)MnO_3{\mid}ScSZ{\mid}Pt$ were fabricated. The effect of polyethylene glycol on the microstructure evolution of $$LaCoO_3and $LaMnO_3$thin films was investigated, and NOx decomposition characteristics of the electrochemical cells were investigated at $500^{\circ}C$ to $600^{\circ}C$. By applying a direct current to the $(La, Sr)MnO_3{\mid}ScSZ{\mid}Pt$ electrochemical cell, good NOx conversion rate could be obtained relatively at low current value even if excess oxygen is included in the reaction gas mixture.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.245-251
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• 2017

Niobium doped zirconium oxide (Nb-Zr-O:NZO) thin films were fabricated on Si substrates by a sol-gel technique with an annealing temperatures of $500{\sim}1000^{\circ}C$ in air ($N_2:O_2=3:1$) for 20 minutes. It was found that the NZO film is based on tetragonal $ZrO_2$ polycrystalline structure with the Nb 5+ ion state and there is almost no diffusion of Nb or Zr to Si substrate. The relative dielectric constant for the NZO film with the Nb composition of 30 mol% and annealed at $800^{\circ}C$ was around 40. The root mean roughness was 1.02 nm. In addition, the leakage current of NZO films was as low as $10^{-6}A/cm^2$ at 4.4 V.

• Journal of the Korean Ceramic Society
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• v.28 no.7
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• pp.503-508
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• 1991

High pure and fine mullite powders were synthesized from Al-secbutoxide[Al(OC4H9)3] and TEOS[Si(OC2H5)4] (SiO2/Al2O3=2/3 mole). Sol-Gel process by partial hydrolysis technique, as it were, first, TEOS was partially hydrolysized and then mixed with Al-secbutoxide for complete hydrolysis was used. The mullite precursor was synthesized within 30 hrs, which was reduced about a half of synthetic time in comparison with the other's study. Al-Si spinel was formed at 980℃ and mullite crystal was formed at 1200℃. Mullite powders synthesized in this study was spherical type like those of the other studies and particle sizes were very fine. Also mullite powders calcined at 1,600℃ had a stoichiometric composition (3Al2O3·2SiO2) and lattice constants were coincided with known theoretical values.

• Journal of the Korean Society of Safety
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• v.12 no.4
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• pp.79-85
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• 1997

In order to improve the surface characteristics of polymethylmethacrylate(PMMA), oxide thin film coatings were applied using the sol-gel dip-coating technique. The $Si(OC_2H_5)_4$, tetra-ethyl-ortho-silicate(TEOS) was used as a starting material for $SiO_2$ coating. The hardness of the alkoxy-derived oxide-coated PMMA was increased from 190 MPa for non-coated PMMA with increasing film thickness. By optimizing the heating conditions and the hydrolysis conditions, a maximum apparent hardness obtained In the present study was achieved 310 MPa using the withdrawal velocity of 5cm/min and heat treatment at $90^{\circ}C$ for 5 hours, which is about 1.6 times larger than that of uncoated PMMA.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.472-473
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• 2006

Maghemite and hematite nanospheres were synthesized by using the Sol-gel technique. The structural properties of these nanosphere powders were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM), and pore size distribution. Hematite phase shows crystalline structures. The mean particle size that resulted from BET and XRD analyses were 4.9 nm and 2 nm. It can be seen from transmission electron microscopy that the size of the particles are very small which is in good agreement with the FESEM and the X-ray diffraction. The BET and pore size method were employed for specific surface area determination.

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.49-54
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• 1989

Thin solid film systems polarizing beam splitter and disk amplifier used in the high power laser system ({{{{ lambda }}0=1060nm) are designed by computer aided optimization technique. Extinction ratio of designed polarizing beam splitter for incidence angle 30$^{\circ}$, 45$^{\circ}$, 55.60$^{\circ}$ are 1:93, 1:895, 1:1991. respectively. Maximum reflectance of designed thin film system of disk amplifier is less than 3% for pumping band (500-900nm) and 0.15% for laser beam. Further, SiO film chosen as one of the suitable thin films in the high power laser system is prepared by the sol=-gel process which gives high damage threshold. When the withdrawal speed is 6.15cm/min -16.62 cm/min and the mixing ratio is in the range of 1 mol (ethylsilicate): 4-8mol(ethylalcohol) : 2mol(water), the thickness of deposited film is in the range of 500{{{{ ANGSTROM }}-1500{{{{ ANGSTROM }}.