• Journal of the Korean Chemical Society
• /
• v.56 no.5
• /
• pp.571-576
• /
• 2012

A sol-gel derived carbon composite electrodes (CCEs) were fabricated by mixing horseradish peroxidase (HRP), sol of tetraethoxysilane (TESO), and graphite powder. The HRP solution was added to the sol solution of TEOS, and then graphite powder was added to this mixture. The resulting carbon ceramic network effectively encapsulated HRP and shows a catalytic reduction starting at -0.2 V for $H_2O_2$. The optimum conditions for $H_2O_2$determination have been characterized with respect to the enzyme loading ratio and pH. The linear range and detection limit of $H_2O_2$ detection were from 0.2 mM to 2.2 mM and 0.035 mM, respectively. The common electroactive interferences such as ascorbic acid, acetaminophene, and uric acid were not affected upon the response to $H_2O_2$ at the HRP biosensor due to low detection potential.

• Korean Journal of Materials Research
• /
• v.22 no.12
• /
• pp.696-700
• /
• 2012

(Na, K) $NbO_3$ thick film was successfully achieved using a sol-gel coating process with the addition of polyvinylpyrrolidone (PVP) to a metal alkoxide solution. The transparent coating solution, mixed with Nb:PVP = 1:1 in a molar ration, was synthesized by evaporating the solvent to over 62.5 wt%. Additive PVP increased the viscosity of the solution so that the coating thickness could be enhanced. The thickness of the (Na, K) $NbO_3$ film assisted by PVP was ca. 320 nm at the time of deposition; this value is four times thicker than that of the sample fabricated without PVP. Also, due to PVP binding with the OH groups of the metal alkoxide, the condensation reaction in the film was suppressed. The crystalline size of the (Na, K) $NbO_3$ films assisted by PVP was ca. 15 nm smaller than that of the film fabricated without PVP. After the sintering process at $700^{\circ}C$, the (Na, K) $NbO_3$ films were mainly composed of randomly oriented (Na, K) $NbO_3$ phase of perovskite crystal structure, including a somewhat secondary phase of $K_2Nb_4O_{11}$. However, by adding PVP, the content of the secondary phase became quite smaller than that of the sample without PVP. It was thought that the addition of PVP might have the effect of restraining the loss of potassium and that PVP could hold metalloxane by strong hydrogen bonding before complete decomposition. Therefore, the film thickness of the (Na, K) $NbO_3$ films could be considerably advanced and made more crack-free by the addition of PVP.

• Journal of the Korean Ceramic Society
• /
• v.41 no.1
• /
• pp.13-18
• /
• 2004

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrodes were prepared on ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) thin films by spin coating method using photosensitive sol-gel solution. Self-patterning technique of photosensitive sol-gel solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. Lanthanum(III) 2-methoxyethoxide, Stronitium diethoxide. Cobalu(II)2-methoxyethoxide were used as starting materials for LSCO electrode. UV irradiation on LSCO thin films lead to decrease solubility by M-O-M bond formation and the solubility difference allows us to obtain self-patternine. There was little composition change of the LSCO thin films between before leaching and after leaching in 2-methoxyethanol. The lowest resistivity of LSCO thin films deposited on $SiO_2$/Si substrate was $1.1{\times}10^{-2}{\Omega}cm$ when the thin film was ennealed at $740^{\circ}C$. The values of Pr/Ps and 2Pr of LSCO/SBT/Pt capacitor on the applied voltage of 5V were 0.51, 8.89 ${\mu}C/cm^2$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.7
• /
• pp.667-672
• /
• 2006

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT(52/48)) thick films were fabricated by the screen-Printing method on the alumina substrates, and $PbTiO_3$ (PT) Precursor solution, which prepared by sol-gel method, was spin-coated on the PZT(52/48) thick films to obtain a densification. Its structural and electrical properties of the PZT(52/48) thick films with the treatment of PT precursor solution coating were investigated. The particle size of the thick films was increased with increasing the number of coatings and the thickness of the PZT-6 (6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PT sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 475 and 2 %, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $32.6{\mu}C/cm^2$, 15 kV/cm and 60 kV/cm, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.9
• /
• pp.429-433
• /
• 2006

PZT(80/0) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(20/80) precusor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5mol/L and the number of coating was varied from 0 to 6. The porosity decreased and the grain size increased with increasing the number of coatings. The thickness of the PZT-6(6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PZT(20/80) sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 275 and 3.5%, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $19.8{\mu}C/cm^2$, 13.7kV/cm and 130kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.43-46
• /
• 2002

Ferroelectric Mg-doped SBT and Ti-doped SBT were successfully deposited on Pt/Ti/$SiO_2/Si$ substrate by using a sol-gel solution coating method. The solutions were prepared through out adding the metal alkoxide solutions to SBT solution. The typical hysteresis loop of the films was obtained at 5V. The measured $2P_r$ value were $16.50{\mu}C/cm^2$ for SBT, $18.98{\mu}C/cm^2$ and for Mg-doped SBT, and $17.10{\mu}C/cm^2$ for Ti-doped SBT at an applied voltage of 5V, respectively. And it is found that the leakage current densities are less than $10^{-7}A/cm^2$ when applied voltage is less than 10.8MV/cm, which indicates the excellent insulating characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.339-342
• /
• 1998

Ferroelectric L $a_2$ $Ti_2$ $O_{7}$(LTO) thin films were prepared by chemical solution deposition processes. Acetylacetone was used as chelating agent and nitric acid was added in the stock solution to control hydrolysis and condensation reaction rate. The LTO thin films were spin-coated on Pt/Ti/ $SiO_2$/(100)Si and Pt/Zr $O_2$/ $SiO_2$/(100)Si substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. The role of acetylacetone in Ti iso-propoxide stabilization by possibly substituting $O^{i}$Pr ligand was studied by H-NMR. B site-rich impurity phase, i.e. L $a_4$ $Ti_{9}$ $O_{24}$, was found after annealing, where its appearance was dependent on process temperature indicating the possible reaction with substrate. Dielectric and other relevant electrical properties were measured and the results were compared between modified sol-gel and MOD processes.s.s.

• Applied Chemistry for Engineering
• /
• v.7 no.5
• /
• pp.823-831
• /
• 1996

At the ratio [$H_2O$]/[TEOS]=1.7, the silica sol was synthesized by partial hydrolysis in the presence of acid catalyst. After stabilizing the silica sol by trimethylsilylation, the molecular weight and viscosity of the sol obtained at various reaction times were examined to determine a best spinnability of the sol. Gel fibers were prepared from the sol solution after removing solvent in the solution, and the gel fibers were heated at $1,000^{\circ}C$. The prepared silica fibers were in the shape of circular cross-section and their tensile strength and $SiO_2$ purity were $83{\pm}20kg/mm^2$ and about 99.997%, respectively.

• Journal of the Korean Ceramic Society
• /
• v.30 no.10
• /
• pp.838-844
• /
• 1993

To control the pore size of silcia gel, formamide (FA), N,N-dimethyl formamide (DMF), polyethylene glycol (PEG) and polyacrylic acid (PAA) were added in the sol-gel process from starting solution with tetramethyl orthosilicate (TMOS). The gels were characterized using porosimeter, TG-DTA and SEM. As a result, the more contents of FA and PAA was increased the more gelation time was decreased, also the more contents of DMF and PEG was increased the more gelling time was increased. The mean pore size of gels was larger in the order of PAA, DMF, FA and PEG. And the mean pore size of porous silica glass was 59.0$\AA$, 31.5$\AA$, 29.9$\AA$ and 29.0$\AA$, respectively, heated at 75$0^{\circ}C$/100$0^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.749-752
• /
• 2001

Very fine cobalt oxide xerogel and ambigel powder were prepared using a unique solution chemistry associated with the sol-gel process. The mesoporous structure of the initial gel is maintained by removing fluid under conditions where the capillary forces that result extraction are either low or no existent, are either low or nonexistent. Controlling both the pore and solid architecture on the nanoscale offers a strategy for the design of supercapacitor. The results materials determine by using electrode that mixed ketjen black and PVdF. But CoO$\_$x/ have the low voltage, so we experimente to change electrolyte and various concentration.