• 한국결정성장학회지
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• 제8권3호
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• pp.468-473
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• 1998

Sol-gel법을 이용하여 PbTiO3에 La을 10mol% 도핑한 박막을 bare Si(100)-wafer 위에 스핀 코팅법을 이용하여 제조하였다. 제조된 박막의 열처리 온도에 따른 결정화 거동을 살펴보고, 씨앗층(seeding layer)을 도입하여 박막의 미세구조 및 배향성을 SEM과 XRD로 관찰하였다. 씨앗층없이 일반적으로 제조된 박막의 경우는 우선 배향성을 나타내지 않았으나, 씨앗층을 도입한 경우에는 씨앗층의 두께 및 열처리 시간에 따라 막의 배향성이 달라졌다.

• 센서학회지
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• 제29권6호
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• pp.420-426
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• 2020

A metal oxide semiconductor gas sensor is operated by measuring the changes in resistance that occur on the surface of nanostructures for gas detection. ZnO, which is an n-type metal oxide semiconductor, is widely used as a gas sensor material owing to its high sensitivity. Various ZnO nanostructures in gas sensors have been studied with the aim of improving surface reactions. In the present study, the sol-gel and vapor phase growth techniques were used to fabricate nanostructures to improve the sensitivity, response, and recovery rate for gas sensing. The sol-gel method was used to synthesize SnO₂ nanoparticles, which were used as the seed layer. The nanoparticles size was controlled by regulating the process parameters of the solution, such as the pH of the solution, the type and amount of solvent. As a result, the SnO₂ seed layer suppressed the aggregation of the nanostructures, thereby interrupting gas diffusion. The ZnO nanostructures with a sol-gel processed SnO₂ seed layer had larger specific surface area and high sensitivity. The gas response and recovery rate were 1-7 min faster than the gas sensor without the sol-gel process. The gas response increased 4-24 times compared to that of the gas sensor without the sol-gel method.

• 한국결정성장학회지
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• 제5권4호
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• pp.332-342
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• 1995

실리콘 알콕사이드 용액의 졸-겔 전이에 있어서 반응조건에 중요한 영향을 미치는 인자에 대하여 Raman 분광분석을 기초로 해서 고찰해 보았다. 촉매의 종류, 용매, 건조제어용 화학첨가제 및 물의 양과 같은 여러 가지 인자가 졸-겔 과정에 있어 전이메카니즘에 영향을 주었다.

• 한국결정성장학회지
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• 제22권1호
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• pp.15-18
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• 2012

Transparent conductive indium zinc oxide thin films were prepared by spin-coating a sol-gel solution. Zinc acetate dihydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] and indium acetate [In$(CH_3COO)_3$] were used as starting precursors, and 2-methoxyethanol with 1-propanol as solvents. Upon annealing in a temperature range from 500 to $1000^{\circ}C$, the thin film crystallizes into polycrystalline $In_2O_3$(ZnO). The lowest electrical resistivity was obtained at an annealing temperature of $700^{\circ}C$ as $2{\Omega}{\cdot}cm$. Average optical transmittances were higher than 80% at all annealing temperatures. These experimental results confirm that the sol-gel spin-coating can be a good simplified practical method for forming transparent electrodes.

• 한국세라믹학회지
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• 제37권7호
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• pp.625-631
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• 2000

In this study, the characteristics and sinterablities of TiO2 powders which were fabricated on sol-gel process and supercritical fluid process were examined. The powders fabricated on sol-gel process were amorphous. The particle size and shape were changed with the amount of water used for hydrolysis of titanium ethoxide. The powders were changed from amorphous to crystalline by heating at 400℃. The crystalline anatase TiO2 powders were directly prepared in ethanol supercritical fluid condition that temperature was 270±3℃ and pressure was 7.3 MPa. It's primary crystalline size was 20 nm and agglomerated as spherical shape whose size was 0.7∼1㎛. The powders prepared on sol-gel process were not sintered densely at 900℃ because of abnormal grain growth. However, the powders which prepared on supercritical fluid process were sintered densely at the comparatively low temperature of 800℃ by ideal growth of grain, which are fired at 900℃.

• 한국결정성장학회지
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• 제18권2호
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• pp.72-75
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• 2008

Zinc oxide (ZnO) thin films were prepared by a sol-gel method. The structural and electrical properties were investigated by varying drying and annealing temperatures. The thin films were coated (250 nm) by spin-coating method on glass substrates. The optimum drying temperature of ZnO thin films was 300$^{\circ}C$ where the resistivity was the lowest and the preferred c-axis orientation was the highest. The annealing was carried out in air and inert atmospheric conditions. The degree of the preferred c-axis orientation was estimated. The highest preferred c-axis orientation was recorded at 600$^{\circ}C$. The preferred c-axis orientation and grain growth resulted in the mobility enhancement of the ZnO thin films, and the lowest resistivity was 0.62${\Omega}{\cdot}cm$ at 600$^{\circ}C$.

• 한국결정성장학회지
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• 제12권4호
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• pp.178-183
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• 2002

용매제로서 polypropanediol을 사용한 sol-gel법으로, La의 함량을 1, 2, 5, 7 ㏖%로 변화시킨 PLZT(x/50/50) 박막을 제조하고 La 함량에 따른 유전특성의 변화를 연구하였다. 제조한 sol을 사용하여 $Pt/Ti/SiO_2$/Si 위에 10회 코팅한 후, 560~$600^{\circ}C$까지 10분간 열처리하여 600nm 두께의 박막을 얻을 수 있었다 $560^{\circ}C$ 이상에서는 조성에 관계없이 perovskite 단일 상만이 나타났고, La 함량이 증가함에 따라 입자 크기가 증가하였다. 모든 조성의 박막에서 열처리 온도가 증가함에 따라 유전상수 및 잔류분극 값이 증가되었으며 $600^{\circ}C$에서 열처리한 박막이 가장 우수한 유전 특성을 나타내었다. $600^{\circ}C$에서 열처리한 박막에서 La함량이 증가함에 따라 잔류분극, 항전계, 유전상수 모두 감소하였다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2002년도 High Temperature Superconductivity Vol.XII
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• pp.65-65
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• 2002

• 한국결정성장학회지
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• 제8권2호
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• pp.315-323
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• 1998

$Ti(i-OC_3H_7)_4$알콕사이드를 출발원료로 사용한 sol-gel법을 이용하여 Rutle, Anatase 결정상의 $TiO_2$박막을 제조하였다. 결정화 정도란 관점에서 $TiO_2$ 박막의 결정상에 미치는 첨가물의 영향을 조사하였다. 3차 비선형 광학 감수율을 THG법을 이용하여 측정하였으며, Rutle 과 Anatase 결정상의 $TiO_2$ 박막의 3차 비선형 광학 감수율은 각각 $1.4{\times}10^{-12}$과 $9.7{\times}10^{-13}$ esu의 값을 얻었다.

• 한국세라믹학회지
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• 제29권5호
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• pp.335-340
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• 1992

Undoped PbTiO3 ceramics was successfully prepared by using sol-gel process, which had not been fabricated due to its microcracks created by anisotropic stress during phase transition from cubic to tetragonal phase. Fabrication of undoped PbTiO3 ceramics via sol-gel processing was very much affected by the PbO content of the samples as well as PbO vapor from sintering atmosphere. Excess PbO was found to promote rapid grain growth in PbTiO3 ceramics. After sintering at 1100$^{\circ}C$ average grain size of PbTiO3 ceramics with excess PbO was about 8 times greater than that of stoichiometric composition, which may be due to PbO liquid phase from excess PbO.