• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.582-585
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• 2004

Pb0.5Sr0.5TiO3 (PST) thin films were fabricated by the alkoxide-based sol-gel process using spin-coating method on Pt/Ti/SiO2/Si substrate. The PST films annealed from 500C to 650C for 1h show a perovskite phase and dense microstructure with a smooth surface. The grain size and dielectric constant of PST films increases with the increase in annealing temperature, which reduces the SiO2 equivalent thickness of the PST film. The crystallinity or internal strain in the PST thin films analyzed from the diffraction-peak widths correlate well with the decrease in the dielectric losses. The dielectric constants and dielectric loss (%) of the PST films annealed at 650c (teq : 0.89 nm) were 549 and 0.21%, respectively.

• Journal of Electrical Engineering and Technology
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• v.8 no.1
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• pp.163-167
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• 2013

Aluminum doped zinc oxide (AZO) thin films have been prepared on the glass substrates (Corning 1737) by sol-gel dip-coating method employing zinc acetate and aluminum chloride hexahydrate for the transparent conducting oxide (TCO) applications. 1 at% Al was doped to the ZnO thin films. The effects of post-heating temperature on the crystallization, optical and electrical properties of the AZO films have been investigated. Experimental results showed that post-heating temperature affected the microstructure, electrical resistance, and optical transmittance of the AZO films. From the X-ray diffraction analysis, all films have hexagonal wurtzite crystal structure. Optical transmittance spectra of the AZO films exhibited transmittance higher than about 80% within the visible wavelength region and the optical direct band gap ($E_g$) of these films was increased with increasing post-heating temperature. A minimum resistivity of $2.5{\times}10^{-3}{\Omega}cm$ was observed at $650^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.135-135
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• 2003

This paper presents the preparation of SnO$_2$ films by Sol-Gel process and using spin coating method, and their sensing properties in CO gas. Experimental procedure consisted of following steps: (1) Tin chloride(SnCl$_4$) and Ammonium hydrogen carbonate (NH$_4$HCO$_3$) were used as precursors; (2) the Sol solution with concentration of about 10wt% SnO$_2$ was prepared from washed Gel-precipitate for spin coating step; (3) thereafter, the coating solution was dropped onto the alumina (Al$_2$O$_3$) substrate that was then spun, the spin coating was carried out with total 10 times; (4) finally, the films were calcined for 3 hours at 50$0^{\circ}C$ or higher temperature (600, 700, 800 or 90$0^{\circ}C$) in order to obtain various gram sizes. The average grain size was calculated by Scherrer's equation using main peaks in XRD spectra; meanwhile the thickness, microstructure and surface morphology of the films were observed by FE-SEM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.665-668
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• 1999

Thin films of Pb(Zr,Ti)O$_3$ were fabricated by means of the sol-gel spin-coating method and the multi-coating of eight coating numbers. The thin films were dried on the temperature range of 250 ~ 400($^{\circ}C$), whenever the specimens were dried after each coating Processing. The fabricated ferroelectric thin films of lead zirconate titanate(PZT) were treated with the rapid thermal annealing(RTA) at 650($^{\circ}C$),or 3(min), and direct insertion thermal annealing(DITA) at 650($^{\circ}C$), for 30(min). The measured properties of dielectric thin films were following: The good results of dielectric properties were shown by the RTA specimen. The saturation polarization(Ps), remanent polarization(Pr), coercive field (Ec), dielectric constant and dielectric loss factor of the RTA specimen were estimated to be about 27.1[ $\mu$ C/$\textrm{cm}^2$], 13.7[ $\mu$ C/$\textrm{cm}^2$], 55.6(kV/cm), 786 and 6.4(%) respectively.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.911-919
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• 1994

As the study for preparation of single-layer anti-reflective coating on glass, the conditions of synthesis of sol for coating and of reproducible coating procedure were investigated. In case of water-based sol, coating was impossible because of poor wettability of sol. The Substitution of solvent with ethanol improved the wettability of sol on the glass surface, and optimum amount of ethanol for substitution was 70 vol%. Maximum specific surface area and total pore volume of water-based sol were 268.7$m^2$/g and 0.315 cc/g, but after substitution, those values increased to 404.1 $m^2$/g and 0.376 cc/g, respectively. The upper limit withdrawl speed of coating in order to get clean coated films without aggregations or stains was 7 cm/min. In case of addition of 0.1 mol HNO3 and substitution with 70 vol% ethanol and heat-treatment at 40$0^{\circ}C$ for 1 hour, thin film with thickness of 94 nm was obtained at withdrawl speed of 4 cm/min. The thickness of thin film was independent of drying time.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.806-809
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• 2009

Epoxy functionalized organic-inorganic hybrid materials (hybrimers) were synthesized by sol-gel reaction for application in OLED barrier coating. By using the calcium degradation method, the oxygen transition rate (OTR) and water vapor transition rate (WVTR) measured so far is $10^{-2}cc/m^2$-day for oxygen and $10^{-1}g/m^2$-day for water molecules with single hybrimer coating film, respectively. Encapsulated OLED devices have life time of 14hrs of a single hybrimer barrier coating and 29hrs of hybrimer/inorganic double barrier coatings at $25^{\circ}C$ and 60% relative humidity.

• Applied Chemistry for Engineering
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• v.17 no.6
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• pp.580-585
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• 2006

UV-thermal dually curable coating materials were prepared by the sol-gel method. Nano-sized colloidal boehmite was treated with various organo silane coupling agents. These materials could be well dispersed in various alcohols and relatively polar organic solvents such as tetrahydrofuran and acetonitrile. The coating films were prepared by a spin coating method on various substrates, which were characterized by FT-IR, Si/Al CP MAS NMR spectra, UV-Vis spectrophotometer, FE-SEM, Taber abraser, haze meter, and pencil hardness tester. The effects of molar ratio and types of silane coupling agents, curing method and ion-shower treatment were investigated. Dually curable coating method offered an optimally good quality film in both hardness and transmittance. The transparency and the hardness of the prepared films were increased with amounts of 3-(trimethoxysilyl)propylmethacrylate, and (3-glycidyloxypropyl)trimethoxysilane, respectively. The adhesion between coated layer and substrate could be enhanced by ion-shower treatment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.241-246
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• 2003

The transparent conducting thin film of ATO (antimony-doped tin oxide) was successfully fabricated on$SiO_2$/glass substrate by a sol-gel dip coating method. The crystalline phase of the ATO thin film was identified as SnO$_2$ major phase and the film thickness was about 100 nm/layer at the withdrawal speed of 50 mm/minute. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film which was annealed under nitrogen atmosphere were 84% and $5.0\times 10^{-3}\Omega \textrm{cm}$, respectively. It was found that the $SiO_2$ layer inhibited Na ion diffusion and the formation of impurities like $Na_2SnO_3$ or SnO while increasing Sb ion concentration and higher ratio of $Sb^{5+}/Sb^{3+}$in the film. Annealing at nitrogen atmosphere leads to the reduction of $Sn^{4+}$ as well as $Sb^{5+}$ resulting in decrease of the electrical resistivity of the film.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.193-193
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• 2011

To obtain ceramic films, the sol-gel coating technique has been broadly used with heat treatment, but crack formation tend to occur during heat treatment in thick sol-gel films. We prepared PZT thin films by sol-gel method with single-step spin coating process. The PZT solution have been synthesized using lead acetate ($Pb(CH_3COO)_2$), zirconium acetylacetonate ($Zr(OC_3H_7^n)_4$), and titanium diisopropoxide bis(acetylacetonate) 75wt% in isopropanol ($Ti(OC_3H_7^i)_2(OC_3H_7^n)_2$) as starting materials and n-propanol was selected as a solvent. The poly(vynilpyrrolidone) (PVP) was added with 0, 0.25, 0.5, 0.75, and 1 molar ratios to control viscosity of solution. We investigated influence of the viscosity on thickness, microstructure, and electrical properties of final PZT films. Thermo-gravimetric analysis and differential scanning calorimeter (TGA/DSC) was carried out from room temperature to $800^{\circ}C$ in order to measure pyrolysis temperature. Structural characteristics were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Ferroelectric and dielectric properties were measured by RT66A (Radiant) and impedance analyzer (Agilent), respectively. The thicknesses of PZT films depended on incorporation of an excess amount of PVP. Finally, we obtained PZT films of good quality without crack formation via single-step spin coating.

• Bulletin of the Korean Chemical Society
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• v.21 no.8
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• pp.817-822
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• 2000

Crack-free hard coating siIica films were prepared by sol-gel processfrom twokinds of silicon alkoxide (tetra-ethoxysilane and methyltrimethoxysilane) and two kinds of alcohol (methanol and isopropyl alcohol) with an acid catalyst,acetic acid. A silicate framework of the precursor solution was investigated by infrared spectros-copy (IR) in the process of hydrolysis and condensation. Theextent of the condensation in the intermediates was elucidated by gel permeation chromatography (GPC) and 29Si-NMR spectroscopy. The hard coating films werecharacterized by IR,scanning electron microscope (SEM), thermo gravimetric analyzer (TGA) and dif-ferential scanning calroimeter (DSC). The synthetic condition for the crack-free and transparent silica film for-mation was optimized interms of starting materials for the precursor solution as well as preparation method of the silica film.