• 제목/요약/키워드: Sol-gel coating

검색결과 622건 처리시간 0.028초

졸-겔법을 이용한 $(Ba_{1-x}Sr_x)TiO_3$ 박막의 제조 및 특성 (Preparation and Characteristics of $(Ba_{1-x}Sr_x)TiO_3$ Thin Films by the Sol-gel Process)

  • 황규석;김병훈
    • 한국세라믹학회지
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    • 제32권4호
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    • pp.516-524
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    • 1995
  • In this study, to prepare the dielectric (Ba, Sr)TiO3 thin films by the sol-gel process, Titaminum (IV) sio-propoxide (Ti[OCH(CH3)2]4), Ba and Sr acetate were used for sol and thin films were prepared by dip-coating process. Stability of sol decreased with the increase of Sr, and thickness of thin films were obtained 0.13~0.17${\mu}{\textrm}{m}$ by 1 coating cycle. Transmittance of amorphous thin films heated at 500 and 55$0^{\circ}C$ was very good, and crystallization tendency of thin films according to heat-treatment temperature and crystallization characteristics of thin films heated at 11$0^{\circ}C$ for 3 hrs were analysed. As a result, good perovskite structure was obtained higher than 100$0^{\circ}C$, and tetragonality of thin film was decreased but pyrochlore was formed with increasing Sr. In case of addition to substitute 0.4mol% Sr for Ba, dielectric constant was 288 and loss factor (tan $\delta$) was 0.04.

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극미세 입자 Aluminosilicate계 졸의 합성 및 응용 (II) Al_2O_3-SiO_2$계 혼합졸 (Synthesis and Application of Nanoparticulate Aluminosilicate Sols (II) Mixed Al_2O_3-SiO_2$ Sols)

  • 현상훈;김승구;이성철
    • 한국세라믹학회지
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    • 제32권1호
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    • pp.63-70
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    • 1995
  • A crack-free ceramic composite membrane with micropores has been synthesized by the pressurized sol-gel coating technique using the mixed Al2O3-SiO2 sols. The mixed sols were prepared by mixing nanoparticulate SiO2 and boehmite sols. These sols were more stable at lower pH, but very unstable when their copositions were in the range of 50~75mol% of SiO2 at the same pH. The mixed Al2O3-SiO2 membrane prepared from the mixed sol (0.2mol/$\ell$ of solid content and pH=2) containing 40mol% of SiO2 had the mean pore radius of 0.80nm and the specific surface area of 280$m^2$/g. The nitrogen permeability through the coated Al2O3-SiO2 layer was 42$\times$107mol/$m^2$.s.Pa. It was found that the thermal stability of aluminosilicate membranes, even through similar to that of SiO2 membranes, was much improved in comparison with ${\gamma}$-alumina membranes.

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졸-겔법을 이용한 $(Pb_{1-x}Sr_x)TiO_3$ 박막의 제조 및 특성에 관한 연구 (Study on the Preparation and Characteristics of $(Pb_{1-x}Sr_x)TiO_3$ Thin Films by the Sol-gel Process)

  • 선계혁;윤희한;황규석;김병훈
    • 한국세라믹학회지
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    • 제33권11호
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    • pp.1195-1202
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    • 1996
  • To prepare the dielectric thin films of (Pb1-xSrx)TiO3 (x=0.1, 0.2, 0.3, 0.35, 0.5) by the sol-gel process titanium (IV) isopropoxide (Ti[OCH(CH3)2]4) and Pb Sr, acetate were used therefore the thin films were fabricated by dip-coating method. Stability of the sol decreased with addition of Sr content thin films could be fabricated up to 35mol% Over this range precipitation of sol occured thin films couldn't be obtained. Transmittance of thin films at visible range decreased with the increase of heat-treatment temperature but exhibited transmit-tance above 60% in all case. Moreover transmittance of thin films at visible range slightly increased with of addition of Sr,. When thin film containing 30 mol% srontium was heated at 600℃ the best perovskite phase was obtained. The dielectric constant (ε) was 280 and dielectric loss factor (tan δ) was 0.021 and curie tempera-ture (Tc) decreased with the increase of addition of Sr.

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졸-겔법에 의한 강유전 BST 박막의 제조 및 특성(II) - 초음파의 효과 (Fabrication and Properties of ferroelectric BST thin films prepared by sol-gel method (II) - effect of ultrasound on properties of thin film)

  • 이진홍;박병옥;이승엽
    • 한국결정성장학회지
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    • 제11권6호
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    • pp.252-258
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    • 2001
  • ($Ba_{0.7}Sr_{0.3})TiO_3$박막을 ITO-coated glass 기판위에 spin-coating법으로 제조하였다. 제조된 용액을 초음파 bath 내에서 초음파 처리하여 균일화를 촉진시킨 후 박막을 제조하여 초음파 처리하지 않은 용액으로 제조한 박막과의 비교를 통하여 초음파 효과를 알아보았다. 용액의 초음파 처리로 박막의 결정화 온도를 다소 낮추었으며 박막의 표면이 보다 균일하고 치밀화되었고 거칠기도 8.4nm에서 5.6nm로 더 낮아졌다. 그리고 박막의 투광성 및 전기적 특성 또한 용액의 초음파 처리로 인하여 향상되었다.

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가압 졸-겔 코팅법에 의한 세라믹막의 기체투과 특성 (Gas Permaeation Characteristics of Ceramic Membranes by the Pressurized Sol-Gel Coating Techique)

  • 현상훈;강범석
    • 한국막학회:학술대회논문집
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    • 한국막학회 1993년도 춘계 총회 및 학술발표회
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    • pp.35-35
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    • 1993
  • 튜브형 $\alpha-Al_2O_3$ 담체에 졸-겔 침지코팅법과 가압코팅(pressurized coating) 법으로 boehmite 졸과 극미세 입자 SiO$_2$ 및 TiO$_2$ 졸을 코팅한 후 200$\circ$C~500$\circ$C 에서 열처리하여 복합분리막을 제조하였다.

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Sol-Gel 법을 이용한 ITO박막의 제조 (Fabrication of ITO Thin Film by Sol-Gel Method)

  • 김지홍;이재호;김영환
    • 전기화학회지
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    • 제3권1호
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    • pp.11-14
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    • 2000
  • 가시광선 영역에서의 높은 투과성과 우수한 전도성을 가진 전도성 ITO박막은 그 전기적 광학적 특성에 의해서 태양 전기 기판의 전극 재료나 Display소자의 투명전극으로 개발되고 있다. 이들의 제작은 현재 sputtering이 주종을 이루나 이들의 높은 생산비를 절감할 목적으로 sol-ge떫을 이용하여 ITO박막을 만들었다. ITO제조용 sol은 유기질 sol로는 indium tri-iso-propoxide를 ethylene glycol monoethyl ether에 녹인 후 $SnCl_4$를 dopant로 사용하여 제조하였다. Acetyl acetone을 넣어 sol이 수화되는 현상을 억제하였다. 무기질 sol로는 indium acetate를 n-propanol에 용해하여 사용하였다. Spin 방법을 이용하여 코팅하였으며 $500^{\circ}C$에서 열처리하였다. 가시 광선 영역에서의 투과도는 $90\%$ 이상을 얻었으며 비저항은 $0.01\Omega{\cdot}cm$가 측정되었다.

$TiO_2$ 복합 분리막의 제조를 위한 졸-겔 코팅공정 분석 (Analysis of the Sol-Gel Coating Process for the Preparation of Supported TiO2 Composite Membranes)

  • 현상훈;최영민
    • 한국세라믹학회지
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    • 제29권5호
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    • pp.403-409
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    • 1992
  • The titania membrane thickness coated on the porous alumina support by the sol-gel method was analyzed using the slipcasting model. The thickness of calcined membrane layers increased linearly from 1.3 to 3.8 ${\mu}{\textrm}{m}$ with the square root of the dipping time (4~40 min). Growth rates of the thickness of wet gels and calcined layers were well described quantitatively by the slipcasting model. Through the regression of experimental data using model equations, the permeability and the pressure drop across wet gels, and the thickness and their growth rate constants of wet gels and calcined layers could be determined. It was also known that the gellation concentration of the TiO2 sol used in this work and the porosity of wet gel layes were 25 mol/ι and 0.53, respectively.

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Sol-gel 공정으로 제작된 산화물 반도체 박막 트랜지스터 (Sol-gel processed oxide semiconductor thin-film transistors for active-matrix displays)

  • 김영훈;박성규;오민석;한정인
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1342_1342
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    • 2009
  • Zinc tin oxide (ZTO) based thin-film transistors (TFTs) were fabricated on glass substrate by using sol-gel method. The fabricated ZTO TFT had bottom gate and top contact structure with ZTO layer formed by spin coating from ZTO solution. The fabricated TFT showed field-effect mobility of about 2 - $4\;cm^2/V{\cdot}s$ with on/off current ratios >$10^7$, and threshold voltage of 2 V.

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