• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.25-28
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• 2001

The objectives of this paper are to demonstrate the electrical degradation phenomena with Si atom's behaviors in the grainboundary of semiconducting ZnO ceramics. The ZnO ceramic devices used in this investigation were fabricated by standard ceramic techniques. Especially, $SiO_2$ were added to analyze the degradation characteristics with Si and sintered in oxygen ambient at $1300^{\circ}C$. The conditions of DC degradation test were $115{\pm}2^{\circ}C$ for 13h. Using XRD and SEM, the phase and microstructure of samples were analyzed respectively. E-J analysis was used to determine $\alpha$. Frequency analysis was accomplished to understand $R_g$ and $R_b$ at the equivalent circuit. Electrical stability improved as the amount of $SiO_2$ addition increased. This results were explain by the quantitative analysis and the line scanning method of EPMA.

• Applied Chemistry for Engineering
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• v.27 no.4
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• pp.371-379
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• 2016

In this article, the foamed body of glass was manufactured from the waste borosilicate glass produced by wet pulverization process without additional pretreatment which can be used as a recycling method for waste LCD panel glass. Each 100 g of pulverized waste borosilicate glass with the size of less than 270 mesh were mixed with 0.3 weight fraction of carbon and 1.5 weight fraction of $Na_2CO_3$, $Na_2SO_4$ and $CaCO_3$ and let them foamed for 20 minutes at $950^{\circ}C$ to manufacture the foamed body having the density of less than $0.3g/cm^3$. Additionally, adding $SiO_2$ or $H_3BO_3$ to the mixture enabled the foamed body to have efficient formation of open pores which showed the possibility for producing the foamed body with new functionalities such as sound absorption.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.383-383
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• 2009

Silicon is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes, so called the metallurgical refining process, which produces ~98% pure Si (MG-Si). This can be further purified to solar grade silicon (SoG-Si) by various techniques. The most problematic impurity elements are B and P because of their high segregation coefficients. In this study, we explored the possibility of the using Cat-CVD for Si purification. The existing hot-wire CVD was modified to accommodate the catalyzer and the heating source. Mo boat (1.5 cm ${\times}$ 1 cm ${\times}$ 0.2 cm) was used as a heating source. Commercially available Si was purchased from Nilaco corporation (~99% pure). This powder was kept in the Mo-boat and heated to the purification temperature. In addition to the purification by cat-CVD technique, other methods such as thermal CVD, plasma enhanced CVD, vacuum annealing was also tried. It is found that the impurities are reduced to a great extent when treated with cat-CVD method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.858-862
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• 2013

The front electrode should be used to make solar cell panel so as to collect electron. The front electrode is used by paste type, printed on the Si-solar cell wafer and sintered at about $800^{\circ}C$. The paste is composed Ag powder and glass frit which make the ohmic contact between Ag electrode and n-type semiconductor layer. From the previous study, the Ag electrodes which used two commercial glass frit of Bi-system were so different on the interface resistance. The main composition of them was Bi-Zn-B-Si-O and few additives added in one of them. In this study, glass frit was made with the ratio of $Bi_2O_3$ and ZnO on the main composition, and then paste using glass frit was prepared respectively. And, also, the paste using the glass frit added oxide additives were prepared. The change of interface resistance was not large with the ratio of $Bi_2O_3$ and ZnO. In the case of G6 glass frit, 78 wt% $Bi_2O_3$ addition, the interface resistance was $190{\Omega}$ and most low. In the glass frit added oxide, the case of Ca increased over 10 times than it of G6 glass frit on the interface resistance. It was thaught that after sintering, Ca added glass frit was not flowed to the interface between Ag electrode and wafer but was in the Ag electrode.

• Journal of the Korean Society of Tobacco Science
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• v.29 no.1
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• pp.23-29
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• 2007

The measurement of physical properties such as apparent density and void fraction of tobacco materials, which is so bulky, is a main theme with regard to tobacco process, quality control, cigarette combustion and smoke generation. Except Solution Impregnation Method, there was no alternative method for measuring those properties in the porous material so far. However, experimental processes of that method are so complicated as to cost much time and labor, the main solution such as mercury to apply to the method is usually very hazard. Therefore, we had developed a new method to determine them easily in our other paper by the mathematical equations derived from the Ergun equation for the purpose of it, and then already evaluated our method through applying some basic data from Muramatsu et at. (1979) with regard to our developed equations. Then, we found our method best fit to experimental one (Oh et al., 2001). In this study we tried to establish our method to conveniently determine those physical properties. Especially, we have focused on the development the easy way to measure surface area and the volume of single shred in a tobacco column. As a result of that, we found that the computer image analyzer was best fit for it. Then, we have finally determined apparent density and void fraction for our domestic tobacco shred.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• Korean Journal of Environmental Agriculture
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• v.18 no.2
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• pp.135-139
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• 1999

A new effective and economic method was developed, removing interferences such as chlorophyll and lipid from leaves with small amounts of reagents and solvents in order to analyse PAHs(Polycyclic Aromatic Hydrocarbons). The extract from a soxhlet containing $4{\sim}5g$ of leaves and 100ml of dichlormethane and refluxed for 20 hrs was concentrated and eluted with 60ml of a hexane:dichloromethane (1:1) mixture through a column of 9mm wide inner diameter and 130mm long, packed from the bottom with 2.5g of $Al_2O_3$, 1.5g of $SiO_2$and 2g of anhydrous $Na_2SO_4$. The eluent was concentrated and loaded on a GPC column of 20mm wide inner diameter and 280mm long, packed with 12g of Bio-beads. The column was washed with 37ml of the hexane:dichloromethane(1:1) mixture. Another 43ml of the mixture was eluted as a PAH fraction and collected. This eluent was concentrated under gentle nitrogen to $50{\mu}l$ and analysed using GC-MS. The recoveries, obtained by comparing with the amounts of the internal standards of deuterated PAHs were $43.3{\sim}107.5%$(RSD $2.2{\sim}9.5%$).

• Resources Recycling
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• v.15 no.6 s.74
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• pp.16-24
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• 2006

In this study, the neutralization and dechlorination process of MWI(Municipal Waste Incinerator) fly ash with $H_2SO_4$ are investigated to recover HCI, which is delivered from the reaction of chloride in the ash and sulfuric acid. The coarse crystalline gypsum and fine impurity containing heavy metal are also separated by 500# wet screening followed by recrystallization of the dechlorinated ash mainly made of $CaSO_4$. As a results, Using 100g MWI fly ash and 85g cone. sulfuric acid as raw material, 52.6g hydrochloric acid with 35% assay and 116.9g crystalline gypsum with 98% or more assay are recovered. In this process, 7.85g fine impurity containing heavy metal and 2.65g coarse impurity are also separated.

• Journal of the Korea Society of Computer and Information
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• v.12 no.4
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• pp.249-256
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• 2007

AIn this paper, a new desist of LDI controller IC for general purpose is proposed for driving the LDI(LCD Driver Interface) controller in $4{\sim}9$ inches sized portable small-medium TFT-LCD(Thin Film Transistor addressed -Liquid Crystal Display) panel module. The designed LDI controller was verified on the FPGA(Reld Programmable Gate Array) test board, and was made the interactive operation with the commercial TFT-LCD panel successfully. The purpose of design is that it is standardized the LDI controller's operation by one LDI controller for driving all TFT-LCD panel without classifying the panel vendor, and size. The main advantage for new general-purpose LDI controller is the usage for the desist of all panel's SoG(System on a Glass) module because of the design for the standard operation. And in the previous method, it used each LDI controller for every LCD vendor, and panel size, but because a new one can drive all portable small-medium sized panel, it results in reduction of LDI controller supply price, and manufacturing cost of AV(Audio Video) board and panel. In the near future, the development of SoG IC(Integrated Circuit) for manufacturing more excellent functional TFT-LCD panel module is necessary. As a result of this research, the TFT-LCD panel can make more small size, and light weight, and it results in an upturn of domestic company's share in the world market. With the suggested theory in this paper, it expects to be made use of a basic data for developing and manufacturing for the SoG chip of TFT-LCD panel module.

• Korean Chemical Engineering Research
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• v.56 no.1
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• pp.139-142
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• 2018

Silicon (Si) is a promising anode material for next-generation lithium ion batteries (LIBs) because of its high capacity of 4,200 mAh/g ($Li_{4.4}Si$ phase). However, the large volume expansion of Si during lithiation leads to electrical failure of electrode and rapid capacity decrease. Generally, a binder is homogeneously mixed with active materials to maintain electrical contact, so that Si needs a particular binding system due to its large volume expansion. Polyvinyl alcohol (PVA) is known to form a hydrogen bond with partially hydrolyzed silicon oxide layer on Si nanoparticles. However, the decrease of its cohesiveness followed by the repeated volume change of Si still remains unsolved. To overcome this problem, we have introduced the electrospinning method to weave active materials in a stable nanofibrous PVA structure, where stresses from the large volume change of Si can be contained. We have confirmed that the capacity retention of Si-based LIBs using electrospun PVA matrix is higher compared to the conservative method (only dissolving in the slurry); the $25^{th}$ cycle capacity retention ratio based on the $2^{nd}$ cycle was 37% for the electrode with electrospun PVA matrix, compared to 27% and 8% for the electrodes with PVdF and PVA binders.