• JSTS:Journal of Semiconductor Technology and Science
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• 제16권4호
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• pp.415-424
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• 2016

This paper describes a high data rate proximity transmitter design for high resolution smartphone-mirrored display applications. A 2 Gb/s transmitter is designed with a low transmission power of -70 dBm/MHz and a wide bandwidth of nearly 3 GHz. A digital pre-correction method is employed in the transmitter to mitigate the inter-symbol interference problem. A carrier-based digital pulse shaping and a reconfigurable digital envelope generation methods are employed for robust operation by utilizing 20 phases from a 2 GHz phase-locked loop. A 6.5-9.5 GHz transmitter implemented in 65 nm CMOS achieves the maximum data rate of 2 Gb/s, consuming only 7.6 mW from a 1 V supply.