• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.105-108
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• 2020

In this study, experiments and simulations were conducted for a 1,200-V-class trench Si insulated-gate bipolar transistor (IGBT) with a small cell pitch below 2.5 ㎛. Presently, as a power device, the 1,200-V-class trench Si IGBT is used for automotives including electric vehicles, hybrid electric vehicles, and industrial motors. We obtained a breakdown voltage of 1,440 V, threshold of 6 V, and state voltage drop of 1.75 V. This device is superior to conventional IGBTs featuring a planar gate. To derive its electrical characteristics, we extracted design and process parameters. The cell pitch was 0.95 ㎛ and total wafer thickness was 140 ㎛ with a resistivity of 60 Ω·cm. We will apply these results to achieve fine-pitch gate power devices suitable for electrical automotive industries.

• Polymer(Korea)
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• v.30 no.5
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• pp.422-425
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• 2006

Due to their periodic helical structure, cholesteric liquid crystals (CLC) have a unique ability to selectively reflect visible light. CLC films reflecting a broad wavelength band were prepared by inducing a pitch gradient in CLC layers through a diffusion of small molecules and through a thermal mixing of cyclic siloxane CLC molecules with different pitch lengths. Various pitch gradients in the CLC cell were observed using UV/Vis spectrometer and SEM technique.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.504-507
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• 2002

We investigated electro-optic and ionic properties of twisted nematic cells by using control of chiral pitch. These properties are observed in practical experiment and simulations. C-V and V-T curve characteristics were obtained from three types of cells with d/p. It is shown that d/p ratio of short cells exhibit faster response time improved by 20% than normal cell. Also, inter-gray response time is improved each rise time and decay time. And, the increase of saturation voltage is happened because of the small twist angel change from initial state at high voltage near 5V. To compensate for longer black level tail, gamma curve index was varied from g = 2.2 to g = 2.7 in module status. Additionally, adding chiral dopant into TN cells improved ionic characteristics such as increasing VHR, Ion density and DC Hysteresis were decreased..

• Transactions of the Korean Society of Mechanical Engineers B
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• v.29 no.8 s.239
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• pp.911-920
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• 2005

The present study investigates heat/mass transfer and flow characteristics in a ribbed rotating passage with turning region. The duct has an aspect ratio (W/H) of 0.5 and a hydraulic diameter ($D_h$) of 26.67 mm. Rib turbulators are attached in the parallel arrangement on the leading and trailing surfaces of the passage. The ribs have a rectangular cross section of 2 m (e) $\times$ 3 m (w) and an attack angle of $70^{\circ}$. The pitch-to-rib height ratio (p/e) is 7.5, and the rib height-to-hydraulic diameter ratio (e/$D_h$) is 0.075. The rotation number ranges from 0.0 to 0.20 while the Reynolds number is constant at 10,000. To verify the heat/mass transfer augmentation, internal flow structures are calculated for the same conditions using a commercial code FLUENT 6.1. The results show that a pair of vortex cells are generated due to the symmetric geometry of the rib arrangement, and heat/mass transfer is augmented up to $Sh/Sh_0=2.9$ averagely, which is higher than that of the cross-ribbed case presented in the previous study for the stationary case. With the passage rotation, the main flow in the first-pass deflects toward the trailing surface and the heat transfer is enhanced on the trailing surface. In the second-pass, the flow enlarges the vortex cell close to the leading surface, and the small vortex cell on the trailing surface side contracts to disappear as the passage rotates faster. At the highest rotation number ($R_O=0.20$), the turn-induced single vortex cell becomes identical regardless of the rib configuration so that similar local heat/mass transfer distributions are observed in the fuming region for the cross- and parallel-ribbed case.