• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.577-580
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• 2015

In this paper, in order to develop the composition ceramics with the outstanding piezoelectric properties, $Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.09}(Zr_{0.5}Ti_{0.5})_{0.88}O_3$ ceramics substituted with $BiFeO_3$ were prepared by the conventional solid-state reaction method. The addition of small amount of $Li_2CO_3$ and $CaCO_3$ as sintering aids decreased the sintering temperature of the ceramics. The effects of $BiFeO_3$ substitution on their piezoelectric and dielectric properties were investigated. when 0.015 mol $BiFeO_3$ was substituted, the optimal physical properties of $d_{33}=590pC/N$, $E_c=8.78kV/mm$ were obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.313-319
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• 2018

This study introduces a new investigation report on the microstructural and electrical property changes of $ZnO-Zn_2BiVO_6-Mn_3O_4$ (ZZMn), where 0.33 mol% of $Mn_3O_4$ and 0.5 mol% of $Zn_2BiVO_6$ were added to ZnO (99.17 mol%) as liquid phase sintering aids. $Zn_2BiVO_6$ contributes to the decrease of sintering temperatures by up to $800^{\circ}C$, and segregates its particles at the grain boundary, while $Mn_3O_4$ enhances ${\alpha}$, the nonlinear coefficient, of varistor properties up to ${\alpha}=62$. In comparison, when the sintering temperature is increased from $800^{\circ}C$ to $1,000^{\circ}C$, the resistivity of ZnO grains decreases from $0.34{\Omega}cm$ to $0.16{\Omega}cm$, and the varistor property degrades. Oxygen vacancy ($V_o^{\bullet}$) (P1, 0.33~0.36 eV) is formed as a dominant defect. Two different kinds of grain boundary activation energies of P2 (0.51~0.70 eV) and P3 (0.70~0.93 eV) are formed according to different sintering temperatures, which are tentatively attributed to be $ZnO/Zn_2BiVO_6$-rich interface and ZnO/ZnO interface, respectively. Accordingly, this study introduces a progressive method of manufacturing ZnO chip varistors by way of sintering ZZMn-based varistor under $900^{\circ}C$. However, to procure a higher reliability, an in-depth study on the multi-component varistors with double-layer grain boundaries should be executed.

• Resources Recycling
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• v.22 no.3
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• pp.28-35
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• 2013

The recycling of the Si/SiC mixture sludge obtained from solar cell industry is very significant, environmentally and economically. The sintering characteristics of Si/SiC mixture sludge was studied for the purpose of recycling. In this study, to understand sintering behavior, SiC content in the Si/SiC mixture was controlled using an air separator. Various Si/SiC mixtures having different SiC contents were sintered using carbon black, clay and aluminum hydroxide as sintering aids. Physical properties of Si/SiC mixture and sintered bodies have been characterized using SEM, XRD, particle size analyzer and apparent density measurement. SEM and particle size analysis result confirmed that the fine particles less than 1 ${\mu}m$ decreased or removed more effectively through the air separator in the case of 95% SiC sample compared than the case of 75% SiC sample or original SiC sample. Further, with addition of the Aluminum Hydroxide, ${\beta}$-cristobalite phase gradually decreased while mullite phase gradually increased. The addition of the carbon black improved the sintering characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.227-231
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• 2008

In this study, in order to improve the electrical properties of low temperature sintering piezoelectric ceramics, $[0.05Pb(Zn_{1/2}W_{1/2})-0.07Pb(Mn_{1/3}Nb_{2/3})-0.088Pb(Zr_{0.48}Ti_{0.52})]O_3$(abbreviated as PZW-PMN-PZT) ceramic systems were fabricated using $Bi_2O_3$, CuO and $Li_2CO_3$ as sintering aids and then their piezoelectric and dielectric properties were investigated according to the amount of $Li_2CO_3$ and post-annealing process. Post-annealing process enhanced all physical properties except for mechanical quality factor (Qm). 0.2 wt% $Li_2CO_3$ added and post-annealed specimen showed the excellent values suitable for low loss piezoelectric actuator application as follow: the density = 7.86 $g/cm^3$ electromechanical coupling factor (kp) = 0.575, piezoelectric constant $d_{33}$ = 370 pC/N, dielectric constant ($\varepsilon_r$) = 1546, and mechanical quality factor (Qm) = 1161, respectively.

• Journal of Powder Materials
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• v.25 no.2
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• pp.144-150
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• 2018

$Al_2O_3-SiC$ ceramic composites are produced using pressureless sintering, and their plasma resistance, electrical resistance, and mechanical properties are evaluated to confirm their applicability as electrostatic-discharge-safe components for semiconductor devices. Through the addition of Mg and Y nitrate sintering aids, it is confirmed that even if SiC content exceeded 10%, complete densification is possible by pressureless sintering. By the uniform distribution of SiC, the total grain growth is suppressed to about $1{\mu}m$; thus an $Al_2O_3-SiC$ sintered body with a high strength over 600 MPa is obtained. The optimum amount of SiC to satisfy all the desired properties of electrostatic-discharge-safe ceramic components is obtained by finding the correlation between the plasma resistance and the electrical resistivity as a function of SiC amount.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.444-449
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• 2010

Transparent ceramics are used in new technology because of their excellent mechanical properties over glasses. Transparent ceramics are nowadays widely used in armor, laser windows, and in high temperature applications. Silicon nitride ceramics have excellent mechanical properties and if transparent silicon nitride is fabricated, it can be widely used. h-BN has a lubricating property and is ductile. Therefore, adding h-BN to silicon nitride ceramics gives a lubricating property and is also machinable. Translucent silicon nitride was fabricated by hot-press sintering (HPS) and 57% transmittance was observed in the near infrared region. A higher wt. % of h-BN in silicon nitride ceramics does not favor transparency. The optical, mechanical, and tribological properties of BN dispersed polycrystalline $Si_3N_4$ ceramics were affected by the density, ${\alpha}:{\beta}$-phase ratio, and content of h-BN in sintered ceramics. The hot pressed samples were prepared from the mixture of $\alpha-Si_3N_4$, AlN, MgO, and h-BN at $1850^{\circ}C$. The composite contained from 0.25 to 2 wt. % BN powder with sintering aids (9% AlN + 3% MgO). A maximum transmittance of 57% was achieved for the 0.25 wt. % BN doped $Si_3N_4$ ceramics. Fracture toughness increased and wear volume and the friction coefficient decreased with an increase in BN content. The properties such as transmittance, density, hardness, and flexural strength decreased with an increase in content of h-BN in silicon nitride ceramics.

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.651-659
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• 1994

BaTiO3 ceramics were sintered on Al2O3, MgAl2O4, MgO and Mg-, Ca-, Y-stabilized zirconia setters. Then the influence of setters on the microstructure of BaTiO3 ceramics and the stability of setters were investigated by SEM, EDAX and XRD analyses. The microstructure of BaTiO3 ceramics sintered on Al2O3, MgAl2O4, MgO and Mg-PSZ showed large grain growth, but little grain growth on Ce-TZP(Tetragonal Zirconia Policrystal). Mg-PSZ(Partially Stabilized Zirconia), Ca-PSZ, Ce-TZP setters showed extensive phase transformation. Y-TZP and fused Y-SZ (Stabilized Zirconia) setters were stable. The liquid sintering aids of BaTiO3 ceramics accelerate mass transport. The reaction of SrTiO3 in BaTiO3 with ZrO2 resulted in the formation of SrZrO3.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.24-25
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• 2006

High-Speed Centrifugal Compaction Process is one of slip-using compacting method originally developed for processing of oxide ceramics. In this study, we apply the HCP to ultra-fine (0.1 micron) WC powder. Organic liquid of heptane was chosen as dispersing media to avoid possible oxidation of WC. The mixing apparatus was a key to obtain dense compacts. Only the slips mixed by high energy planetary ball mill were packed up to 55% by the HCP, and sintered to almost full density at 1673 K without any sintering aids. This sintered compact marked Vickers hardness of Hv 2750 at maximum.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.645-650
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• 1998

Alumina- and yttria-coated SiC powder was prepared by the surface-induced precipitation method, and sintered properties of silicon carbide prepared from this powder were investigated. After a well dispersion of SiC powders in the aqueous solution of $Al_2(SO_4)_3$ and $Y_2(SO_4)_3$, the mixed precursors of aluminum hydroxide, aluminum carbonate, yttrium hydroxide, and yttrium carbonate were precipitated on the surfaces of SiC particles through the hydrolysis reaction of urea. SiC specimens with alumina and yttria exhibit, 97.8% of theoretical density after the sintering at $1900^{\circ}C$ for 2 hrs. During annealing at $2000^{\circ}C$, $\beta$longrightarrow$\alpha$ phase transformation of SiC had taken place and resulted with a rodlike microstructure. Toughness of sintered SiC was enhanced by crack deflection around the rodlike grains. In case of annealing less than that of 3 hr, the fracture toughness of SiC was slightly improved with increasing the amount of sintering aid. However, annealed specimens for a long time showed constant fracture toughness even though the amount of sintering aid increased. It is resulted that the main factor for toughening in annealed SiC for a long time is the pullout effect of rodlike grains during the propagation of cracks, and the amount of sintering aids is less effective on the fracture toughness of SiC.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.193-202
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• 1999

Al powder, AlN powder, SiC whisker and sintering aids were wet-mixed, and then the specimens prepared with mixed powder were reacted by nitridation at 600∼1400$^{\circ}C$ for 5 hrs. It was cleat that the higher nitridation and the more SiC whisker content were, the better bending strength was. The specimen of Al50/AlN50 reacted at 1400$^{\circ}C$ for 5hrs had the nitridation percent of 97%, the shrinkage under 2%, and the relative density of 78%. And the maximum bending strength of reaction-bonded specimen was 250 MPa. The specimens completely nitrided were post-sintered at 1700, 1800 and 1900$^{\circ}C$ for 2hrs. The post-sintered body had the shrinkage under 6% and the relative density of 86%. Because of the formation of solid solution between AlN and SiC whisker over 1800$^{\circ}C$, the promotion of mechanical properties according to SiC whisker addition was not observed. The post-sintered body had the maximum bending strength of 195 MPa.