• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2006.11a
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• pp.169-172
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• 2006

In the present work, silicon nitride was fabricated with $Y_3Al_5O_{12}$ as sintering additive and its mechanical properties were investigated. Silicon nitride with 3, 5, 7wt% of $Y_3Al_5O_{12}$ was prepared and sintered by a Hot Pressing (HP) technique at 1750, $1800^{\circ}C$ for 2 hours. The Process was fulfilled under different process pressures of 30, 45MPa respectively. Mechanical properties (density, strength, hardness, fracture toughness) were investigated as a function of $Y_3Al_5O_{12}$ contents in $Si_3N_4$. $Si_3N_4-Y_3Al_5O_{12}$ ceramics showed similar mechanical properties compared with $Si_3N_4-Y_2O_3-Al_2O_3$ ceramics. But its high temperature strength was higher than $Si_3N_4-Y_2O_3-Al_2O_3$ceramics considerably.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2006.11a
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• pp.162-165
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• 2006

In this study, Liquid Phase Sintered SiC (LPS-SiC) was fabricated by hot pressing method with $\beta$-SiC powder whose a particle size is 30nm and less on the average in argon condition at 1780 and $1800^{\circ}C$ under 20MPa. Alumina ($Al_2O_3$), yttria ($Y_2O_3$) and silica ($SiO_2$) were used for sintering additives. To investigate effects of particle-size and temperature on $SiO_2$, LPS-SiC was fixed $Al_2O_3$, $Y_2O_3$ and then particle-size of $SiO_2$ were changed as two kinds. The system of particle-size and temperature on sintering additives which affects a property of sintering os well os the influence depending on particle-size and temperature of sintering additives were investigated by measurement of sintering properties. Such as measurement of sintering density, vikers hardness and observing of microstructure were investigated to make sure of the optimum condition which is about matrix of $SiC_f/SiC$ composites. Base on the composition of sintering additives, microstructure and sintering property correlation, the effect of particle-size of sintering additives are discussed. An experimental method to investigate the dynamic characteristics of bums in extreme environmental condition is established.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.202-209
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• 2004

Hydroxyapatite(HA)/TiO$_2$ composite powders were prepared by mixing of spherical TiO$_2$ (10-15 nm, 500 nm) and needle-shaped HA (50-70 nm, 120-250 nm) powders which had been synthesized through precipitation, sol-gel and hydrothermal methods. From the three types of starting composite powders (HA/TiO$_2$ wt% of 75/25, 50/50, and 25/75), dense $\beta$-TCP/TiO$_2$ composites were prepared by hot-pressing at 800-100$0^{\circ}C$ for 30 min under the pressure of 30 ㎫ in Af atmosphere. The $\beta$-TCP/TiO$_2$ composites showed different microstructures and sintering densities depending on their powder morphology, composition and sintering temperature. With increasing the sintering temperature and the content of TiO$_2$, sintered density was increased and microstructure became more homogeneous.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.769-774
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• 2002

The powder mixture in which Fe-Ni alloy particles of 20 nm were homogeneously dispersed on $Al_2O_3$ particle surfaces was prepared by hydrogen reduction of $Al_2O_3$ and metal oxide powders. $Al_2O_3$/Fe-Ni nanocomposites fabricated by pressureless sintering were only composed of $Al_2O_3$ and ${gamma}$-Fe-Ni phases and achieved over 98% of the theoretical density at the sintering temperature above $1350^{\circ}C$. The highest strength and toughness of the composites were 574 MPa and 3.9 MP$a{\cdot}m1/2$, respectively. These values were about 20% higher than these of monolithic $Al_2O_3$ sintered at the same conditions. Nanocomposites showed ferromagnetic properties and coercive force was increased with decrease of the average particle size of dispersions.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.690-695
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• 2003

Soft-solution route employing PVA(Polyvinyl Alcohol) as a polymeric carrier in a mixed metal cation solution was used for synthesis of single-phase nickel aluminate (NiA1$_2$O$_4$) powders. The PVA ensured the homogeneous distribution of metal ions in the solution and it resulted in the decrease of crystallization temperature. The synthesized powders prepared by PVA addition were soft and ball-milled easily. The ball-milled powders of about 300 nm in size were fully densified to density of 4.35 g/㎤ at 1600$^{\circ}C$ for 1 h. The Vickers hardness, flexural strength, fracture toughness and thermal expansion coefficient of the sintered nickel aluminate were 14.2 ㎬, 304 ㎫, 4.8 ㎫$.$m$\^$1/2/ and 9.8${\times}$10$\^$-6//$^{\circ}C$, respectively.

• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.218-225
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• 2013

The densification behavior and strength of sintered reaction bonded silicon nitrides (SRBSN) that contain $Lu_2O_3-SiO_2$ additives were improved by the addition of fine Si powder. Dense specimens (relative density: 99.5%) were obtained by gas-pressure sintering (GPS) at $1850^{\circ}C$ through the addition of fine Si. In contrast, the densification of conventional specimens did not complete at $1950^{\circ}C$. The fine Si decreased the onset temperature of shrinkage and increased the shrinkage rate because the additive helped the compaction of green bodies and induced the formation of fine $Si_3N_4$ particles after nitridation and sintering at and above $1600^{\circ}C$. The amount of residual $SiO_2$ within the specimens was not strongly affected by adding fine Si powder because most of the $SiO_2$ layer that had formed on the fine Si particles decomposed during nitridation. The maximum strength and fracture toughness of the specimens were 991 MPa and $8.0MPa{\cdot}m^{1/2}$, respectively.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.10a
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• pp.233-244
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• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.386-389
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• 2001

In this study, development of a new LTCC material using non-glassy system was attempted with repsect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, $ZnWO_4$ was turned out the suitable LTCC material. $ZnWO_4$ can be sintered up to 98% of full density at $1050^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. In order to modify the dielectric properties and densification temperature, $B_{2}O_{3}$ and $V_{2}O_{5}$ were added to $ZnWO_4$. 40 mol% $B_{2}O_{3}$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to $-7.6ppm/^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of $V_{2}O_{5}$ in $ZnWO_{4}-B_{2}O_{3}$ system enhanced liquid phase sintering. 0.1 wt% $V_{2}O_{5}$ addition to the $0.6ZnWO_{4}-0.4B_{2}O_{3}$ system, reduced the sintering temperature down to $950^{\circ}C$. Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and $-21.6ppm/^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.467-475
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• 2004

ZnO epilayer were synthesized by the pulsed laser deposition(PLD) process on $Al_2$ $O_3$substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A $l_2$ $O_3$) substrate at a temperature of 400 $^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.27${\times}$$10^{16}$$cm^{-3}$ and 299 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}$(T)= 3.3973 eV - (2.69 ${\times}$ 10$_{-4}$ eV/K) $T^2$(T＋463k). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$ , $V_{o}$ , Z $n_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/A $l_2$ $O_3$did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.s.s.s.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.136-141
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• 2005

In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, PCW-PMN-PZT ceramics using Li$_2$CO$_3$, Bi$_2$O$_3$, and CuO as sintering aids were manufactured according to the amount of MnO$_2$ addition. Their microstructural, dielectric and piezoelectric properties were investigated. When the sintering aids were added, specimens could be sintered below 95$0^{\circ}C$, but mechanical qualify factor decreased. Therefore, MnO$_2$ was added excessively to the PCW-PMN-PZT ceramics to increase mechanical quality factor. At the sintering temperature of 95$0^{\circ}C$, the density, dielectric constant($\varepsilon$$_{r}$), electromechanical coupling factor(k$_{p}$), mechanical quality factor(Q$_{m}$) and Curie temperature(T$_{c}$) of 0.1 wt% MnO$_2$ added specimen showed the optimal values of 7.75 g/㎤, 1503, 0.57, 1502, and 337, respectively, for multilayer piezoelectric transformer application.ation.n.