• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.77-84
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• 2007

In this parer, a wideband low-noise amplifier (LNA) has been realized in a 0.18mm CMOS technology for the applications of subsampling direct-conversion RF receivers. By exploiting the inverter-type transimpedance input stage with a 3rd-order Chebyshev matching network, the wideband LNA demonstrates the measured results of the -3dB bandwidth of 5.35GHz, the power gain (S21) of $12\sim18dB$, the noise figure (NF) of $6.9\sim10.8dB$, and the broadband input/output impedance matching of less than -10dB/-24dB within the bandwidth, respectively. The chip dissipates 32.4mW from a single 1.8V supply, and occupies the area of $0.56\times1.0mm^2$.