• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.19-27
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• 2003

Morphology and composition of MgO films grown on single-crystalline diamond (100) have been studied. MgO thin films were deposited in the substrate temperature range from room temperature (RT) to 723K by means of electron beam evaporation using MgO powder source. Atomic force microscopy images indicated that the film grown at RT without $O_2$ supply was relatively uniform and flat whereas that deposited in oxygen ambient yielded higher growth rates and rough surface morphologies. X-ray photoelectron spectroscopy analyses demonstrate that the MgO film deposited at RT without $O_2$ has the closest composition to the stoichiometric MgO, and that a thin contaminant layer composed mainly of magnesium peroxide (before etching) or hydroxide (after etching) was unintentionally formed on the film surface, respectively. These results will be discussed in relation to the interaction among the evaporated species and intentionally supplied oxygen molecules at the growth front as well as the interfacial energy between diamond and MgO.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.250-253
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• 1990

A single-crystalline epitaxial film of GaAs has been grown on Si using an ionized cluster beam technique. The native oxide layer on the silicon substrate was removed at $550^{\circ}C$ by use of an accelerated arsonic ion beam, instead of a high-temperature desorption. During the growth the substrate temperature was maintained at $550^{\circ}C$. Transmission electron microscopy and electron diffraction data suggest that the eats layer is an epitaxially grown single-crystalline layer.

• Journal of Korean Vacuum Science & Technology
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• v.1 no.1
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• pp.1-12
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• 1997

A new three-dimensional (3D) Monte Carlo ion implantation simulator, TRICSI, has been developed to investigate 3D mask effects in the typical mask structure for ion implantation into crystalline silicon. We present the mask corner and mask size effects of implanted boron range profiles, and also show the calculated damage distributions by applying the modified Kinchin-Pease equation in the single-crystal silicon target. The simulator calculates accurately and efficiently the implanted-boron range profiles under the relatively large implanted area, using a newly developed search algorithm for the collision partner in the single-crystal silicon. All of the typical implant parameters such as dose, tilt and rotation angles, in addition to energy can be used for the 3D simulation of ion implantation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.19-22
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• 2002

Three different ZnO nanomaterials (nanobelts, nanorods, and nanowires) were synthesized at three different substrate temperatures from the thermal evaporation of ball-milled ZnO powders at $1380^{\circ}C$. Transmission electron microscopy (TEM) revealed that the ZnO nanobelts are single crystalline with the growth direction perpendicular to the (010) lattice planes, and that the ZnO nanorods and nanowires are single crystalline with the growth directions perpendicular to the (001) and (110) lattice planes, respectively. In photoluminescence (PL), the peak energy of near band-edge (NBE) emission was determined for nanobelts, nanorods, and nanowires.

• Journal of the Korean Ceramic Society
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• v.29 no.10
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• pp.765-772
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• 1992

As the fundamental research of preparation of fine single crystalline ferroxplana by means of glass-crystallization methods using steel twin-roller the properties of ferroxplana extracted from cyrstallized glass were studied. Most of all the specimens quenched by twin-roller at about 1350$^{\circ}C$ were glass phase, the crystallization of these glass had multi-steps and ferroxplana phase was only stable untill 900$^{\circ}C$, began to be decomposed from about 950$^{\circ}C$ in glass. The morphology of particle could be controlled by the composition and crystallization condition, and Zn2+ was replaced by reduced Fe2+ which is 2∼3% contents of total Fe. Ferroxplana extracted had such magnetic properties as Ms=34 emu/g, mHc=10 Oe and Curie Temperature, Tc=425K.

• Proceedings of the KIEE Conference
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• 2000.07d
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• pp.2793-2795
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• 2000

It is a quite quality concerning to control temperature of single crystalline growth as it does when you get most of heat treating products. It is also important factor to control temperature when you make the Al2O3(single crystalline) used to artificial jewels, glass of watches. heat resistant transparent glasses, Thus. it is a major interest to get the proper temperature in accordance with the time process while you are making mixture of oxygen and hydrogen to have the right temperature. In this paper, we will study of electrical valve positioning system for the gas mixture to improve the quality of products.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.5
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• pp.171-174
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• 2016

The diamond wire sawing method to produce silicon wafers for the photovoltaic application is still a new and highly investigated wafering technology. This technology, featured as the higher productivity, lower wear of the wire, and easier recycling of the coolant, is expected to become the mainstream technique for slicing the silicon crystals. However, the saw marks on the wafer surface have to be investigated and improved. This paper discusses the removal of saw marks on diamond wire-sawn single crystalline silicon wafer. With a pretreatment step using tetramethyl ammonium hydroxide ($(CH_3)_4NOH$, TMAH) and conventional texturing process with KOH solution (1 % KOH, 8 % IPA, and DI water), the saw marks on the surface of the diamond wire-sawn silicon wafers can be effectively removed and they are invisible to naked eyes completely.

• Proceedings of the KIEE Conference
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• 2001.07d
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• pp.2431-2433
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• 2001

Robust control for DC motor is needed according to the highest precision of industrial automation. It is a quite quality concerning to control temperature of single crystalline growth as it does when you get most of heat treating products. It is also important factor to control temperature when you make the A12O3(single crystalline) used to artificial jewels, glass of watches, heat resistant transparent glasses. Thus, it is a major interest to get the proper temperature in accordance with the time process while you are making mixture of oxygen and hydrogen to have the right temperature. In this paper, we will study of electrical valve positioning system for the gas mixture to improve the quality of products.

• Proceedings of the KAIS Fall Conference
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• 2000.10a
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• pp.181-184
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• 2000

It is a quite quality concerning to control temperature of single crystalline it does when you get most of heat treating Products. It is also important control temperature when you make the A1203(single crystalline) used to jewels, 91ass of watches. heat resistant transparent 91asses. Thus, it is a md to get the proper temperature in accordance with the time process while making mixture of oxygen and hydrogen to have the right temperature. In we will study of electrical valve positioning system for the gas mixture to im quality of Products.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.1-5
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• 2003

ZnO nanobelts, nanorods, and nanowires were synthesized at three different substrate temperatures from the thermal evaporation of ball-milled ZnO powders at 1380$^{\circ}C$. Transmission electron microscopy (TEM) revealed that the ZnO nanobelts are single crystalline with the growth direction perpendicular to the (010) lattice planes, and that the ZnO nanorods and nanowires are single crystalline with the growth directions perpendicular to the (001) and (110) lattice planes, respectively. In cathodoluminescence (CL), the peak energy of near bandedge (NBE) emission was determined for nanobelts, nanorods, and nanowires.