• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.143-144
• /
• 2008

Single crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_2S_4$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_2S_4$ thin films measured with Hall effect by van der Pauw method are $8.51\times10^{17}$ electron/$cm^{-3}$, 291 $cm^2$/v-s at 293 K, respectively.

• Proceedings of the KWS Conference
• /
• 2004.05a
• /
• pp.255-257
• /
• 2004

This report presents S-N testing results of the butt and T-joint weldment which are produced by single sided welding with cenramic backing material. The specimen is designed in accordance with JISZ 3103 aid the test is peformed by the JSME S002. The nominal and hot spot stress based design S-N curves derived from fatigue tests are compared with the BS design curve. For butt and T-joint, it can be known that the double-sided butt welding process could be replaced by the single sided butt welding.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.8
• /
• pp.524-530
• /
• 2015

We propose a three-electrode type electronic paper display and its fabrication process to realize single color at the same display panel. We establish a fabrication process with the mixing of electronic ink, loading of this ink, electronic ink assembly, packaging and driving. Also, we discuss an operating principle of this panel and the induced image reversal phenomenon by electric field area of the lower electrodes. This phenomenon is not occurred for the panel having $10{\mu}m$ electrode space. By this pixelation structure like this three-electronic paper display, a single color realization without color filter is possible and various kind of color is defined by a dye selection for charged particles and electrically neutral fluid.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.267-269
• /
• 2003

반도체 웨이퍼 및 각종 박막의 면/비저항(sheet/resistivity resistance)의 측정에 비교적 간단히 측정할 수 있고 측정정확도가 높은 4탐침(four-point probe)방법이 널리 사용되고 있다 또한 4탐침 측정방법은 높은 분해능의 contour map작성과 ion implantation의 doping accuracy 및 doping uniformity의 측정에도 사용된다. 최근 재료의 소형, 박막화 경향으로 볼 때 정확한 비저항 측정의 필요성이 요구되고 있으며 이에 따라 4탐침 측정기술인 single 및 dual configuration method로 실리콘 웨이퍼에 대한 비저항의 측정 정확도를 고찰한 결과 dual configuration 측정방법이 single configuration측정 방법에 비하여 정밀 정확도가 더 좋은 것으로 고찰되었다.

• Maxillofacial Plastic and Reconstructive Surgery
• /
• v.34 no.6
• /
• pp.462-465
• /
• 2012

Horizontal and vertical ridge augmentation with implant placement was performed, using a block type of autogenous tooth bone graft in a 37-year old male patient. This material was very useful for the case of severe alveolar bone resorption of a single tooth. After 13 months, excellent bony healing was obtained and final restoration was performed successfully.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.185-185
• /
• 2008

This paper describes the broadband SDC (Single-ended to Differential Converter) for Digital Video Broadcasting-Satellite $2^{nd}$ edition (DVB-S2) receiver tuner IC. It is fabricated by using $0.18{\mu}m$ CMOS process. In order to obtain high linearity and low phase mismatch, the broadband SDC (Single-ended to Differential Converter) is designed with current mirror structure and cross-coupled capacitor and current source binding differential structure at VDD. The simulation result of SDC shows IIP3 of 11.9 dBm and IIP2 of 38 dBm. It consumes 5mA current with 2.7V supply voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.317-320
• /
• 1999

In this study, the piezoelectric ceramics PZT powder was synthesized by Wet-Dry combination method. And the flexible 1-3-0 type composites were fabricated with piezoceramic PZT and Eccogel polymer matrix embedded 3rd phase. Dielectric constant of 1-3-0 type composites was lower than that of single phase PZT ceramics. Thickness mode coupling factor k/sub t/ which was comparable with single phase PZT ceramics and mechanical quality factor Qm were about 0.65 and 6, respectively. These composites are considered as a good candidates for broad-band type transducer applications. The acoustic impedance of 1-3-0 type composites was lower than that of single phase PZT ceramics. Therefore, these composites would be better used for hydrophone applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.126-129
• /
• 1999

Dielectric and piezoelectric properties of perovskite materials such as La modified $Pb(Zr,Ti)O_3$ ceramics and $Pb(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3$ single crystals were investigated for cryogenic capacitor and actuator applications. Enhanced extrinsic contributions resulted in piezoelectric coefficient (d33) as high as 250 pC/N at 30 K, superior to that of PZT ($d_{33}$ ~ 100 pC/N). This cryogenic property enhancement was associated with retuning the MPB (or cryogenic temperatures. PZN-PT single crystals exhibited dramatic property improvements such as $d_{33}$ > 500 pC/N at 30 K as a result of an engineered domain state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.251-254
• /
• 1999

A new multi-seeding process for the growth of YBa$_2$Cu$_3$Oxx single crystals was developed. This process introduces an additional heating step to peritectic temperature and a subsequent slow cooling step to the growth temperature following the point when the crystals contacted. The crystal growth was resumed thereafter. The results obtained with this new process were compared with those of the conventional growth process, in which materials were only kept at the growth temperature. It was observed that the liquid phase between crystals were almost completely eliminated, but that Y2ll grains were grown during this new process. There was no significant improvement in trapped magnetic field over the conventional process, which is believed to be due to the cracks generated during the oxygen heat treatment or to the growth of YBa$_2$Cu$_3$Ox grains.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.4
• /
• pp.272-279
• /
• 2003

In this work Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystals were grown by the chemical transport reaction method in which the iodine was used as the transporting agent. The Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystal was found to have a monoclinic structure. The optical absorption spectra of grown crystals were investigated using a temperature-controlled UV-VIS -NIR spectrophotometer. The temperature dependence of band-edge absorption was in a good agreement with the Varshni equation. The observed impurity absorption peaks could be explained as arising from the electron transition between energy levels of Co$^{2+}$ ion sited at the T$_{d}$ symmetry point.