• Title/Summary/Keyword: Single Junction

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The efficiency charateristics of intrinsic layer thickness dependence for amorphous silicon single junction solar cells (Intrinsic layer 두께 가변에 따른 단일접합 비정질 박막 태양전지의 효율 특성 변화)

  • Yoon, Ki-Chan;Kim, Young-Kook;Heo, Jong-Kyu;Choi, Hyung-Wook;Yi, Young-Suk;Yi, Jun-Sin
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.80-82
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    • 2009
  • The dependence of the efficiency characteristics of hydrogenated amorphous silicon single junction solar cells on the various intrinsic layer thickness has been investigate in the glass/$SnO_2$:F/p,i,n a-Si:H/Al type of amorphous silicon solar cells by cluster PECVD system. The open circuit voltage, short circuit current, fill factor and conversion efficiency have been measured under AM 1.5 condition. The result of the cell performance was improved about 8.2% due to an increase in the short circuit current.

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Down-Conversion Effect Applied to GaAs p-i-n Single Junction Solar Cell

  • Park, Jun-Seo;Kim, Ji-Hun;Go, Hyeong-Deok;Lee, Gi-Yong;Kim, Jeong-Hyeok;Han, Il-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.694-694
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    • 2013
  • With the growing need of more effective energy harvesting, solar energy has been sought as one of the prominent candidates among the eco-friendly methods. Although many types of solar cells have been developed, the electronic conversion efficiency is limited by the material's physical properties: solar cells can only harvest solar energy from limited range in solar energy spectrum. To overcome this physical limit, we approached by using the down conversion effect, transforming the high energy photons to low energy photons, to the range the designated solar cell can convert to electronic energy. In our study, we have fabricated GaAs single junction solar cells and applied CdSe quantum dots for down-conversion. We examine the effects of such application on the solar cell efficiancy, fill-factor, JSC, VOC, etc.

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Electrical Properties of Single Crystal CdTe by Impurity (불순물에 의한 CdTe단결정의 전기적 특성)

  • 박창엽
    • 전기의세계
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    • v.20 no.2
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    • pp.9-14
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    • 1971
  • N type single crystal CdTe is grown by doping Gallium as 0.01 percent, by using zone melting method. And also p type CdTe is grown by doping Ag, Sb, and Te as 0.01%. Resistivity and Concentration of the n.p type single crystal are measured. And then Li ions are implanted on the n type CdTe by high voltage accellerator with different amount of impurity. Indium is evaporated on the p type in high vacuum condition. These sample are heated so as to make P-N Junction in Argon gas flow. Electrical properties for solar cell are investigated. Photovoltage and current are found to be varyed according to following factor: 1) amount of impurity 2) diffusion thickness 3) temperature and time for making P-N junction. Efficiency of the P-N Junction evaporated Indium is 6.5 when it is heated at 380.deg. C for 15 minutie.

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Operation of a Single Flux Quantum 4-stage Shift Register Fabricated with High $T_c$ Ramp-edge Junction Technology (고온 초전도 경사형 모서리 접합을 이용한 4단 쉬프트 레지스터의 동작)

  • Kim, J. H.;Park, J. H.;Kim, S. H.;Jung, K. R.;Kang, J. H.;Sung, G. Y.;Hahn, T. S.
    • Progress in Superconductivity
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    • v.3 no.1
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    • pp.83-86
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    • 2001
  • We have fabricated a single flux quantum 4-stage shift register with interface-controlled $Y_1$$Ba_2$$Cu_3$$O_{7-x}$(YBCO) Josephson junction. The YBCO Josephson junctions showed RSJ-like current-voltage(I-V) curves at temperatures 45~80K. We tested load and shift operation of shift register with binary data sequences “1000”, “1010”, “1011”, and “1111” at 58K. For all the binary data sequences, the shift register operated successfully. By operating the circuit with proper current pulses, we observed no errors during at least 12 hours operation for all the data sequences.s.

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Varistor Behavior of ZnO Single Crystal Monolayer Junction (단입계 ZnO 단결정 접합체의 바리스터 거동)

  • Kim, Young-Jung;Kim, Yeong-Cheol;Ahn, Seung-Joon;Min, Joon-Won
    • Journal of the Korean Ceramic Society
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    • v.42 no.5 s.276
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    • pp.366-370
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    • 2005
  • Single gram-boundary varistors were fabricated using hydrothermal and vapor phase grown ZnO single crystals and their voltage-current relation was studied. The single crystal bonded single junction varistor showed various voltage-current relationship and different breakdown voltage of 0.24-3V. The different types of non-linear current voltage behaviors was attributed to the variation of electrical conductivity in ZnO single crystals.

Development of A Traffic Network Controller using Fuzzy Logic (퍼지 논리를 사용한 교통망 제어기의 개발)

  • Kim, Jong-Wan;Han, Byung-Joon
    • The Transactions of the Korea Information Processing Society
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    • v.5 no.11
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    • pp.2908-2914
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    • 1998
  • This paper presents an intelligent signal for controling the traffic lights on traffic junction network with dynamic traffic flow, When a junction is connected to adjacent junctions on four sides. Prior researches have been done on the single traffic junction. However, it is dificult to apply single junction controller to real traffic situation. In this paper, we develop a fuzzy taffic network controller which adjusts the extension time of current green phase by using teh fuzzy input variables such as the number of entering cars at the green light, the number of waiting cars during the red light, and the traffic volume. The proposed method was compared to the existing junction signal control methods on controllers in terms of average delay time of cars and the cost function defined in this paper.

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Organic-Inorganic Perovskite for Highly Efficient Tandem Solar Cells (고효율 적층형 태양전지를 위한 유무기 페로브스카이트)

  • Park, Ik Jae;Kim, Dong Hoe
    • Ceramist
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    • v.22 no.2
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    • pp.146-169
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    • 2019
  • To overcome the theoretical efficiency of single-junction solar cells (> 30 %), tandem solar cells (or multi-junction solar cells) is considered as a strong nominee because of their excellent light utilization. Organic-inorganic halide perovskite has been regarded as a promising candidate material for next-generation tandem solar cell due to not only their excellent optoelectronic properties but also their bandgap-tune-ability and low-temperature process-possibility. As a result, they have been adopted either as a wide-bandgap top cell combined with narrow-bandgap silicon or CuInxGa(1-x)Se2 bottom cells or for all-perovskite tandem solar cells using narrow- and wide-bandgap perovskites. To successfully transition perovskite materials from for single junction to tandem, substantial efforts need to focus on fabricating the high quality wide- and narrow-bandgap perovskite materials and semi-transparent electrode/recombination layer. In this paper, we present an overview of the current research and our outlook regarding perovskite-based tandem solar technology. Several key challenges discussed are: 1) a wide-bandgap perovskite for top-cell in multi-junction tandem solar cells; 2) a narrow-bandgap perovskite for bottom-cell in all-perovskite tandem solar cells, and 3) suitable semi-transparent conducting layer for efficient electrode or recombination layer in tandem solar cells.

The Formation of $YBa_2$$Cu_3$$O_7$ Step-edge Josephson Junction on LaAl$O_3$and MgO Single Crystal Substrates by Using Step-edge Annealing (LaAl$O_3$와 MgO 기판 위에 형성한 $YBa_2$$Cu_3$$O_7$ 모서리 죠셉슨 접합의 열처리 효과)

  • Yunseok Hwang;Kim, Jin-Tae;Sunkyung Moon;Lee, Soon-Gul;Park, Yong-Ki;Park, Jong-Chul
    • Progress in Superconductivity
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    • v.2 no.2
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    • pp.71-75
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    • 2001
  • The effect of annealing step-edges of LaAlO$_3$ and MgO single crystal substrates on YBa$_2$Cu$_3$O$_{7}$ junction has been studied. The step-edge was fabricated by argon ion milling and was annealed at 105$0^{\circ}C$ in 1 attn oxygen pressure. We compared AFM image near step-edge of the substrates between before and after annealing process. And YBa$_2$Cu$_3$O$_{7}$ thin film was deposited on the step-edge by a standard pulsed laser deposition. The step-edge junctions were characterized by current-voltage curves at 77 K. The annealing of step-edges of MgO substrate improved the current-voltage characteristic of Josephson junction: double steps in the current-voltage characteristic disappeared. However the annealing for LaAlO$_3$ did not improve the junction property.rty.

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Study of hydrogenated a-SiGe cell for middle cell of Triple junction solar cell (Triple junction 태양전지의 a-SiGe middle cell에 관한 연구)

  • Park, Taejin;Baek, Seungjo;Kim, Beomjoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.83.1-83.1
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    • 2010
  • Hydrogenated a-SiGe middle cell for triple junction solar cell was investigated with various process parameters. a-SiGe I-layer was deposited at substrate temperature $245^{\circ}C$ and hydrogen content(R) was up to 26.7. Low optical bandgap(1.45eV) of a-SiGe cell was applied for middle cell although a-SiGe single cell efficiency with low Ge content was higher. And this cell was applied to the middle cell of a glass superstrate type a-Si/a-SiGe/uc-Si triple junction solar cell. The triple junction solar cell was resulted in the initial efficiency of about 9%, area $0.25cm^2$, under global AM 1.5 illumination.

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