• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.66-70
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• 2003

In this paper a plannar singly balanced diode Miter for 24GHz band application is designed and implemented using a microstrip line and two schottky barrier beam lead mixer diodes. The implemented mixer have a conversion loss of 6 [dB], LO/RF isolation of 23 [dB], input 1dB compression point of 4 [dBm]. this diode mixer would be useful for homedyne radar.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.893-896
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• 2005

This paper describes Low Noise Amplifier(LNA) and Single Balanced Mixer(SBM) with monolithic image rejection notch filter using 0.5um MESFET process. LNA, Notch filter, and SBM were integrated on a chip. This chip does not need off chip SAW filter, thereby reducing the overall cost and system volume. The LNA with Notch filter provides a gain of 15dB, noise figure of 1.2dB, and image rejection ratio of -74dB. The SBM has a conversion gain of 6dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.5
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• pp.538-544
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• 2011

This paper presents a compact single balanced diode mixer fabricated using a 0.1 ${\mu}M$ GaAs p-HEMT commercial process for an E-band frequency up/down converter. This mixer includes a LO balun employing a Marchand balun with a good RF performance. In order to improve the port-to-port isolation, a high pass filter and a low pass filter are include in this mixer at the RF and IF ports, respectively. The fabricated mixer with a very compact size of 0.58 mm2(0.85 mm${\times}$0.68 mm) exhibits a conversion loss of 8～12 dB and an input P1dB of 1～5 dBm at the LO power of 10 dBm from 71～86 GHz.