• 한국전기전자재료학회논문지
• /
• 제18권12호
• /
• pp.1106-1110
• /
• 2005

We fabricated (110) silicon hard master by using anisotropic wet etching for embossing. The etching chemical for the silicon wafer was a TMAH $25\%$ solution. The anisotropic wet etching produces a smooth sidewall surface and the surface roughness of the fabricated master is about 3 nm. After spin coating an organic-inorganic sol-gel hybrid material on a silicon substrate, we employed hot embossing technique operated at a low pressure and temperature to form patterns on the silicon substrate by using the fabricated master. We successfully fabricated the multi-mode planar optical waveguides showing low propagation loss of 0.4 dB/cm. The surface roughness of embossed patterns was uniform for more than 10 times of the embossing processes with a single hydrophobic surface treatment of the silicon hard master.

• 한국표면공학회지
• /
• 제32권2호
• /
• pp.134-143
• /
• 1999

The effects of silicon on galvannealing behavior of interstitial-free (IF) steels were studied. The growth rate of the Fe-Zn alloy layer was retarded as silicon in the steel added. Titanium in steel strongly favors Fe-Zn reaction, in particular outburst structures, whereas silicon inhibit them. Cross-sectional and planar views of galvannealed coatings were investigated to characterize alloy phase development. A possible mechanism to explain the retardation effect of silicon is discussed in terms of concentration on surface and inhibition layer.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1996년도 제11차 KACG 학술발표회 Crystalline Particle Symposium (CPS)
• /
• pp.129-153
• /
• 1996

In aqueous slurry processing of silicon nitride, the interaction of dispersant and binder on the surface of particles was studied to identify the effect of these additives on ceramic powder processing. Polymethacrylic acid (PMAA) and polyvinyl alcohol (PVA) were used as dispersant and binder, respectively. the adsorption isotherms of PMAA and PVA for the silicon nitride suspension were determined, while the adsorption of PMAA was differentiated in the mixed additive system by ultraviolet spectroscopy. These experiments were done in order to investigate the effect of these organic additives on the physicochemical properties of silicon nitride suspensions. The electrokinetic behavior of silicon nitride was subsequently measured by electrokinetic sonic amplitude (ESA). As PMAA adsorbed onto silicon nitride, the isoelectric point (pHicp) shifted from pH=6.7 to acidic pH, depending on the surface coverage of PMAA. However, adsorption of PVA did not change the pHicp of suspensions, but did decrease the surface potential of silicon nitride moderately. The rheological behavior of silicon nitride suspensions was measured to assess the stability of particles in aqueous media, and was correlated with the electrokinetic behavior and adsorption isotherm data for silicon nitride.

• 신재생에너지
• /
• 제2권2호
• /
• pp.4-8
• /
• 2006

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layer were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The surface morphology of porous Si layers were investigated using SEM. The formation of a porous Si layer about $0.1{\mu}m$ thick on the textured silicon wafer result in an effective reflectance coefficient Reff lower than 5% in the wavelength region from 400 to 1000nm. Such a surface modification allows improving the Si solar cell characteristics.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.1080-1083
• /
• 2002

In this paper, we have studied with regard to the use of lasers for modifying the surface properties of silicon in order to improve it's wettability and adhesion characteristics. Using an Nd:YAG pulse laser, the wettability and adhesion characteristics of silicon surface have been developed by an Nd:YAG pulse laser. It was found that the laser treatment of silicon surfaces modified the surface energy. In the result of wetting experiments, by the sessile drop technique using the distilled water, wetting characteristic of silicon after the laser irradiation shows a decreased value of the contact angle. In case of the laser treated silicon surface, laser direct writing of copper lines has been achieved by pyrolytic decomposition of copper formate films$(Cu(HCOO)_2{\cdot}4H_2Q)$, using a focused $Ar^+$ laser beam$(\lambda=514.5nm)$ on the silicon substrates. The deposited patterns were measured by energy dispersive X-ray(EDX), Scanning Electron Microscopy(SEM) and surface profiler($\alpha$-step) to examine the cross section of deposited copper lines and linewidth.

• The Korean Journal of Ceramics
• /
• 제4권3호
• /
• pp.245-248
• /
• 1998

Porous carbon fiber composites (CFCs) having variable specific surface area ranging 35~1150 $\m^2$/g were reacted to produce silicon carbide fiber composites with SiO vapor generated from a mixture of Si and $SiO_2$ at 1673 K for 2 h under vacuum. Part of SiO vapor generated during conversion process condensed on to the converted fiber surface as amorphous silica. Chemical analysis of the converted CFCs resulting from reaction showed that the products contained 27~90% silicon carbide, 7~18% amorphous silica and 3~63% unreacted carbon, and the composition depended on the specific carbide, 7~18% amorphous silica and 3~63% unreacted carbon, and the composition depended on the specific surface area of CFCs. CFC of higher specific surface area yielded higher degree of conversion of carbon to silicon and conversion products of lower mechanical strength due to occurrence of cracks in the converted caron fiber. As the conversion of carbon to silicon carbide proceeded, pore size of converted CFCs increased as a result of growth of silicon carbide crystallites, which is also linked to the crack formation in the converted fiber.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2006년도 춘계학술대회
• /
• pp.183-186
• /
• 2006

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layer were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The surface morphology of porous Si layers were investigated using SEM. The formation of a porous Si layer about $0.1{\mu}m$ thick on the textured silicon wafer result in an effective reflectance coefficient $R_{eff}$ lower than 5% in the wavelength region from 400 to 1000nm. Such a surface modification allows improving the Si solar cell characteristics.

• 한국세라믹학회지
• /
• 제32권8호
• /
• pp.901-908
• /
• 1995

In aqueous slurry processing of silicon nitride, the interaction of dispersant and binder used as polymeric processing additives on the silicon nitride particle surface was studied to identify the effect of these processing polymeric additives on the ceramic powder processing. The adsoprtion isotherm study of anionic organic molecule as dispersant and nonionic organic molecules as binder of silicon nitricde was studied to investigate the effect of these processing organic additives on the physicochemical properties of silicon nitride particles. As anionic molecule adsorbed onto silicon nitrice surface, the IEP of silicon nitride shifted toward acidic pH and changed the stability of silicon nitride particle. However, the adsorption of binder as nonionic organic molecule onto silicon nitride surface did not changed the IEP but caused the decrease of electrostatic potentials of silicon nitride. These distinctive adsorption behaviors of organic additives on silicon nitride particles can be closely correlated to the stability of silicon nitride particles suspended in aqueous media.

• 한국생산제조학회지
• /
• 제6권4호
• /
• pp.34-38
• /
• 1997

This paper presents a joining method by using the silicon wafer in order to apply to joint to the 3-dimensional structures of semiconductor device, high-speed , high integration, micro machine, silicon integrated sensor, and actuator. In this study, the high atomic beam, stabilized by oxidation film and organic materials at the material surface, is investigated, and the purified is obtained by removing the oxidation film and pollution layer at the materials. And the unstable surface is obtained, which can be easily joined. In order to use the low temperatures for the joint method, the main subjects are obtained as follows: 1) In the case of the silicon wafer and the silicon wafer and the silicon wafer of alumina sputter film, the specimens can be jointed at 2$0^{\circ}C$, and the joining strength is 5Mpa. 2) The specimens can not always be joined at the room temperatures in the case of the silicon wafer and the silicon wafer of alumina sputter film.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.346.2-346.2
• /
• 2016

The rear side contact recombination in the crystalline silicon solar cell could be reduced by back surface field. We formed polycrystalline silicon as a back surface field through crystallization of amorphous silicon. A thin silicon oxide applied to the passivation layer. We used quasi-steady-state photoconductance measurement to analyze electrical properties with various annealing condition. And, blister formed on surface of wafer during the annealing process. We observed the blister after varied annealing process with wafer of various surface. Shape and density of blister is influenced by various annealing temperature and process time. As the annealing temperature became higher, the average diameter of blister is decreased and total number of blister is increased. The sample with the $600^{\circ}C$ annealing temperature and 1 min annealing time exhibited the highest implied open circuit voltage and lifetime. We predicted that the various shape and density of blister affects the lifetime and implied open circuit voltage.