• Journal of the Korean Society of Industry Convergence
• /
• v.7 no.3
• /
• pp.259-263
• /
• 2004

In the manufacture progress of LCD or semiconductor, there are used many kinds of gas like erosion gas, dilution gas, toxic gas as a progress which used these gas there are required high puritize to increase accumulation rate of semiconductor or LCD materials work progress of semiconductor or LCD it demand many things like the material which could minimize metallic dust that could be occured by reaction between gas and transfer pipe laying material, illumination of the surface, emition of the gas, metal liquation, welding etc also demand quality geting stricted. Material-Low-sulfur-contend (0.007-0010), vacuum-arc-remelt(VAR), seamless, high-purity tubing material is recommend for enhance welding lower surface defect density All wetted stainless steel surface must be 316LSS elecrto polishinged with ${\leq}0.254{\mu}m$($10.0{\mu}in$) Ra average surface finish, $Cr/Fe{\geq}1.1$ and $Cr_2O_3$ thickness ${\geq}25{\AA}$ From the AES analytical the oxide layer thickness (23.5~36 angstroms silicon dioxide equivalent) and chromum to iron ratios is similar to those generally found on electropolished stainless steel., molybdenum and silicon contaminants ; elements characteristic of stainless steel (iron, nickel and chromium); and oxygen were found on the surface Phosphorus and nitrogen are common contaminants from the electropolish and passivation steps.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.3 no.3
• /
• pp.52-57
• /
• 2004

Many kinds of gases, such as erosion gas, dilution gas, and toxic gas have been used in manufacturing process of LCD at semiconductor. In order to increase accumulation rate of manufacturing process, high degree of purity in these gases and minimized metalllic dust are required. All wetted stainless steel surface must be 316L electro-polished with $0254{\mu}m$ in average. Based on the AES analysis, Cr/Fe 11 and $Cr_2O_3$ thickness $25{\AA}$ are measured Molybdenum and silicon contaminants which is characteristic of stainless steel and oxygen were found on the surface.