• 제목/요약/키워드: Silicon boride ceramics

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Mechanical Behaviour of Non-Oxide Boride Type Ceramics Formed on The AISI 1040 Plain Carbon Steel

  • Sen, Saduman;Usta, Metin;Bindal, Cuma;UciSik, A.Hikmet
    • The Korean Journal of Ceramics
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    • 제6권1호
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    • pp.27-31
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    • 2000
  • A series experiments were performed to evaluate mechanical behavior of non-oxide boride type ceramics formed on the AISI 1040 plain carbon steel. Boronizing was performed in a slurry salt bath consisting of borax, boric acid, and ferro-silicon at $950^{\circ}C$ for 2-6h. The AISI 1040 steel used as substrate material was containing 0.4%C, 0.13%Si, 0.65%Mn, 0.02%P, 0.014%S. The presence of non-oxide boride type ceramics $Fe_2B $ and FeB formed on the surface of steel was confirmed by metallographic technique and X-ray diffraction (XRD) analysis. The hardness of borides measured via Vickers indenter with a load of 2N reached a microhardness of up to 1800 DPN. The hardness of unborided steel was 185 DPN. The fracture toughness of borides measured by means of Vickers indenter with a load of 10N was about 2.30 MPa.$m^{1/2}$. The thickness of boride layers ranged from 72$\mu\textrm{m}$ to 145$\mu\textrm{m}$. Boride layers have a columnar morphology.

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방전 플라즈마 소결법으로 제조된 silicon boride 세라믹스의 열전 특성 (Thermoelectric characteristics of the spark plasma-sintered silicon boride ceramics)

  • 심승환;이대웅;채재홍;;심광보
    • 한국결정성장학회지
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    • 제15권2호
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    • pp.75-78
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    • 2005
  • 본 연구에서는 고온 융점과 높은 Seebeck 계수로 인해 고온 열전 재료로서 매우 우수한 silicon boride ($SiB_6$)의 고밀도 소결체를 방전 플라즈마 소결법(spark plasma sintering, SPS)을 도입하여 제조하였으며, 소결된 시편의 미세구조 및 열전 특성을 평가하였다. $1500^{\circ}C$의 비교적 저온에서 이론 밀도의 약 99%의 소결밀도로 SPS법을 통해 효과적으로 $SiB_6$를 치밀화 할 수 있었으며 이들 시편들의 열전특성 평가로부터, hot-press법으로 제조된 시편과 비교하여 매우 향상된 Seebeck 계수를 얻을 수 있었으며 상대적으로 높은 출력인자 값을 나타냈다.

New Boron Compound, Silicon Boride Ceramics for Capturing Thermal Neutrons (Possibility of the material application for nuclear power generation)

  • Matsushita, Jun-ichi
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.15-15
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    • 2011
  • As you know, boron compounds, borax ($Na_2B_4O_5(OH)_4{\cdot}8H_2O$) etc. were known thousands of years ago. As for natural boron, it has two naturally occurring and stable isotopes, boron 11 ($^{11}B$) and boron 10 ($^{10}B$). The neutron absorption $^{10}B$ is included about 19~20% with 80~81% $^{11}B$. Boron is similar to carbon in its capability to form stable covalently bonded molecular networks. The mass difference results in a wide range of ${\beta}$ values between the $^{11}B$ and $^{10}B$. The $^{10}B$ isotope, stable with 5 neutrons is excellent at capturing thermal neutrons. For example, it is possible to decrease a thermal neutron required for the nuclear reaction of uranium 235 ($^{235}U$). If $^{10}B$ absorbs a neutron ($^1n$), it will change to $^7Li+^1{\alpha}$ (${\alpha}$ ray, like $^4He$) with prompt ${\gamma}$ ray from $^{11}B$ $^{11}B$ (equation 1). $$^{10}B+^1n\;{\rightarrow}\;^{11}B\;{\rightarrow}\; prompt \;{\gamma}\;ray (478 keV), \;^7Li+4{\alpha}\;(4He)\;\;\;\;{\cdots}\; (1)$$ If about 1% boron is added to stainless steel, it is known that a neutron shielding effect will be 3 times the boron free steel. Enriched boron or $^{10}B$ is used in both radiation shielding and in boron neutron capture therapy. Then, $^{10}B$ is used for reactivity control and in emergency shutdown systems in nuclear reactors. Furthermore, boron carbide, $B_4C$, is used as the charge of a nuclear fission reaction control rod material and neutron cover material for nuclear reactors. The $B_4C$ powder of natural B composition is used as a charge of a control material of a boiling water reactor (BWR) which occupies commercial power reactors in nuclear power generation. The $B_4C$ sintered body which adjusted $^{10}B$ concentration is used as a charge of a control material of the fast breeder reactor (FBR) currently developed aiming at establishment of a nuclear fuel cycle. In this study for new boron compound, silicon boride ceramics for capturing thermal neutrons, preparation and characterization of both silicon tetraboride ($SiB_4$) and silicon hexaboride ($SiB_6$) and ceramics produced by sintering were investigated in order to determine the suitability of this material for nuclear power generation. The relative density increased with increasing sintering temperature. With a sintering temperature of 1,923 K, a sintered body having a relative density of more than 99% was obtained. The Vickers hardness increased with increasing sintering temperature. The best result was a Vickers hardness of 28 GPa for the $SiB_6$ sintered at 1,923K for 1 h. The high temperature Vickers hardness of the $SiB_6$ sintered body changed from 28 to 12 GPa in the temperature range of room temperature to 1,273 K. The thermal conductivity of the SiB6 sintered body changed from 9.1 to 2.4 W/mK in the range of room temperature to 1,273 K.

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Effect of TaB2 Addition on the Oxidation Behaviors of ZrB2-SiC Based Ultra-High Temperature Ceramics

  • Lee, Seung-Jun;Kim, Do-Kyung
    • 한국재료학회지
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    • 제20권4호
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    • pp.217-222
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    • 2010
  • Zirconium diboride (ZrB2) and mixed diboride of (Zr0.7Ta0.3)B2 containing 30 vol.% silicon carbide (SiC) composites were prepared by hot-pressing at $1800^{\circ}C$. XRD analysis identified the high crystalline metal diboride-SiC composites at $1800^{\circ}C$. The TaB2 addition to ZrB2-SiC showed a slight peak shift to a higher angle of 2-theta of ZrB2, which confirmed the presence of a homogeneous solid solution. Elastic modulus, hardness and fracture toughness were slightly increased by addition of TaB2. A volatility diagram was calculated to understand the oxidation behavior. Oxidation behavior was investigated at $1500^{\circ}C$ under ambient and low oxygen partial pressure (pO2~10-8 Pa). In an ambient environment, the TaB2 addition to the ZrB2-SiC improved the oxidation resistance over entire range of evaluated temperatures by formation of a less porous oxide layer beneath the surface SiO2. Exposure of metal boride-SiC at low pO2 resulted in active oxidation of SiC due to the high vapor pressure of SiO (g), and, as a result, it produced a porous surface layer. The depth variations of the oxidized layer were measured by SEM. In the ZrB2-SiC composite, the thickness of the reaction layer linearly increased as a function of time and showed active oxidation kinetics. The TaB2 addition to the ZrB2-SiC composite showed improved oxidation resistance with slight deviation from the linearity in depth variation.