• 한국표면공학회지
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• 제32권3호
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• pp.389-392
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• 1999

We employed cobalt-disilicide for high-speed logic devices. We prepared stable and low resistant $CoSi_2$ through typical fabrication process including wet cleaning and rapid thermal process (RTP). We sputtered 15nm thick cobalt on the wafer and performed RTP annealing 2 times to obtain 60nm thick $CoSi_2$. We observed spherical shape voids with diameter of 40nm in the surface and inside $CoSi_2$ layers. The voids resulted in taking over abnormal junction leakage current and contact resistance values. We report that the voids in $CoSi_2$ layers are resulted from surface pits during the ion implantation previous to deposit cobalt layer. Silicide reaction rate around pits was enhanced due to Gibbs-Thompson effects and the volume expansion of the silicidation of the flat active regime trapped dimples. We confirmed that keeping the buffer oxide layer during ion implantation and annealing the silicon surface after ion implantation were required to prevent void defects in CoSi$_2$ layers.

• 한국재료학회지
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• 제3권5호
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• pp.482-496
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• 1993

Radiation damage and contamination of silicons etched in the $CF_4+H_2$ and $CHF_3$ magnetron discharges have been characterized using Schottky diode characteristics, TEM, AES, and SIMS as a function of applied magnetic field strength. It turned out that, as the magnetic field strength increased, the radiation damage measured by cross sectional TEM and by leakage current of Schottky diodes decreased colse to that of wet dtched samples especially for $CF_4$ plasma etched samples, For $CF_4+H_2$and $CHF_3$ etched samples, hydrogen from the plasmas introduced extended defects to the silicon and this caused increased leakage current to the samples etched at low magnetic field strength conditions by hydrogen passivation. The thickness of polymer with the increasing magnetic field strength and showed the minimum polymer residue thickness near the 100Gauss where the silicon etch rate was maximum. Also, other contaminants such as target material were found to be minimum on the etched silicon surface near the highest etch rate condition.

• 비파괴검사학회지
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• 제25권6호
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• pp.459-466
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• 2005

The scanning laser source (SLS) technique has been proposed recently as an effective way to investigate small surface-breaking defects, By monitoring the amplitude and frequency changes of the ultrasound generated as the SLS scans over a defect, the SLS technique has provided enhanced signal-to-noise performance compared to the traditional pitch-catch or pulse-echo ultrasonic methods, An extension of the SLS approach to map defects in microdevices is proposed by bringing both the generator and the receiver to the near-field scattering region of the defects, To facilitate near-field ultrasound measurement, silicon microcantilever probes are fabricated using microfabrication technique and their acoustical characteristics are investigated, Then, both the laser-generated ultrasonic source and the microcantilever probe are used to monitor near-field scattering by a surface-breaking defect.

• Tribology and Lubricants
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• 제23권4호
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• pp.143-148
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• 2007

The surface defects of an aluminum tube for an OPC drum have been analyzed using a scanning microscopy(SEM) and an energy dispersive X-ray analyze.(EDX). The SEM/EDX system, which may provide good information on the surface defects and their distributions, provides an optical diameter of an impurity and a chemical composition. These are strongly related on the coated film thickness and quality of an OPC drum, which is a key element of a toner cartridge for a laser printer. The experimental results show that the local deformations, scratch wear, and flaws are produce the non-uniform coating layers, which may be removed by a manufacturing process of an aluminum tube. The major parameters on the coating quality of an OPC drum are the impurities of an aluminum tube such as silicon, oxygen, calcium, carbon, sulphur, chlorine, and others. These impurities may be removed by an ingot molding, extrusion and drawing, quality control, and packing processes with a strict manufacturing technology.

• Tribology and Lubricants
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• 제23권5호
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• pp.195-200
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• 2007

This paper presents the friction induced scuffing and wear defects analysis of a pin bushing bearing based on the chemical composition using a scanning microscopy (SEM) and an energy dispersive X-ray analyzer (EDX). The SEM/EDX system, which may provide good information on the surface thermal defects and chemical compositions, provides impurities such as an aluminum, a silicon, a ferrous component and an oxygen, especially. The EDX measured results show that the oxygen may reduce the strength and a hardness of a pin busing, which may lead to a scuffing and a seizure on the rubbing contact surface. The current technology fabricated by a sintering for a pin bushing bearing should be modified or changed to reduce the oxygen composition and the impurities in pin bushing materials.

• 반도체디스플레이기술학회지
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• 제10권2호
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• pp.7-12
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• 2011

In this paper, a laser scattering mechanism are designed to detect micro defects such as dent, scratch, pinhole, etc. Its influential parameters are experimentally selected and scattering patterns of micro defects have been analyzed for silicon wafer in solar cell. As a result of experiments, scattered lights are rather increased in wafer surface with micro defects, in comparison to no micro ones. Scattering parameters are optimally selected for obtaining robust and high quality laser scattering images of micro defects. It is shown that scattered light components are linearly increased according to the increase of micro defect sizes, and the depth of micro-defects give a large influence on optical deflection.

• 한국재료학회지
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• 제14권6호
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• pp.413-419
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• 2004

Recently, Silicon On Insulator (SOI) devices emerged to achieve better device characteristics such as higher operation speed, lower power consumption and latch-up immunity. Nevertheless, there are many detrimental defects in SOI wafers such as hydrofluoric-acid (HF)-defects, pinhole, islands, threading dislocations (TD), pyramid stacking faults (PSF), and surface roughness originating from quality of buried oxide film layer. Although the number of defects in SOI wafers has been greatly reduced over the past decade, the turn over of high-speed microprocessors using SOI wafers has been delayed because of unknown defects in SOI wafers. A new characterization method is proposed to investigate the crystalline quality, the buried oxide integrity and some electrical parameters of bonded SOI wafers. In this study, major surface defects in bonded SOI are reviewed using HF dipping, Secco etching, Cu-decoration followed by focused ion beam (FIB) and transmission electron microscope (TEM).

• Journal of Advanced Marine Engineering and Technology
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• 제33권7호
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• pp.1026-1033
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• 2009

Fine ceramics have high strength, excellent wear resistance, chemical stability and high strength at high temperature and are receiving attention in various fields such as construction, engineering, aerospace and marine science. Finish machining process is required to obtain precise ceramics components because sintering process necessary for obtaining high strength and high quality ceramics reduces the dimensions of components and precision of shape. But high strength and brittleness of ceramics materials cause difficulty in processing. So a process for obtaining wanted dimensions is studying using high temperature which makes ceramics softened and thermal affected recently. Laser beam is a very useful optical device for these kinds of processes. Laser process such as laser cutting, laser machining, laser heat treatment and laser-assisted machining(LAM) is researching to manufacture practical ceramics components using intense laser source which can cause local softening and damage of workpiece. In this paper, microstructural and mechanical properties of silicon nitride heated are studied as a basic study for researching of ceramics process by laser beam. The surface variation of HIP and SSN-silicon nitride was analyzed with SEM and EDS. A processing at $1,300^{\circ}C$ or above causes N element to combine into $N_2$ gas and the gas busts from surface. These phenomena make bloat, craters and heat defects on the surface of silicon nitride. Also, oxygen content is largely increased to oxidize the surface and it causes changing of phases and reducing of hardness of surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.310-313
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• 2002

Structures obtained with a direct boning of two FZ silicon wafers joined in such a way that a smooth surface of one wafer was attached to the grooved surface of the other were studied. A square net of grooves was made with a conventional photo lithography process. After high temperature annealing the appearance of voids and the rearrangement of structural defects were observed with X-ray diffraction topography techniques. It was shown that the formation of void free grooved boundaries was feasible. In the cases when particulate contamination was prevented, the voids appeared in the grooved structures could be eliminated with annealing. Since it was found that the flattening was accompanied with plastic deformation, this deformation was suggested to be intensively involved in the process of void removal. A model was proposed explaining the interaction between the structural defects resulted in "a dissolution" of cavities. The described processes may occur in grooved as well as in smooth structures, but there are the former that allow to manage air traps and undesirable excess of dislocation density. Grooves can be paths for air leave. According to the established mechanisms, if not outdone, the dislocations form local defect arrangements at the grooves permitting the substantial reduction in defect density over the remainder of the interfacial area.

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.207-212
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• 2014

Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.