• Journal of the Semiconductor & Display Technology
• /
• v.20 no.1
• /
• pp.59-63
• /
• 2021

Upper electrode is one of core parts using plasma etching process at semiconductor. The purpose of this study is to analyze effects of cutting conditions for mechanical machining of silicon upper electrode. For this research, surface roughness of machined workpiece and depth of damage inside of silicon electrode are experimented and analyzed and different values of feed rate and depth of cut are applied for the experiments. From these experiments, it is verified that the surface roughness and internal damaged layer get worse according to take more fast feed rate. In conclusion, cutting condition is very important factor for machining. Results of this study can use to develop various parts which are made from single crystal silicon and affect various benefits to the semiconductor industry for better productivity.

• Journal of the Korean institute of surface engineering
• /
• v.23 no.1
• /
• pp.27-33
• /
• 1990

Thermodynamic analysis on silicon consumpton during the chemical vapor deposition of tungten was carried out by calculation equilibrium concerations of all possible product species utilizing a computer progrom according to VCS.(Villars-Cruise-Smith) algorithm. The calculation could show various reaction paths which dominate the tungsten deposition under different process conditions. According to the calculation, the consumption of silicon can also be reduced at a lower total pressure SiH4 without H2 as the reacting gas is most effective for suppression of the excessive consumption of silicon during the deposition process.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.04a
• /
• pp.78-79
• /
• 2007

In this study, chemical dry characteristics of silicon nitride layers were investigated in the $F_2/N_2/Ar$ remote plasma. A toroidal-type remote plasma source was used for the generation of remote plasmas. The effects of additive $N_2$ gas on the etch rates of various silicon nitride layers deposited using different deposition techniques and precursors were investigated by varying the various process parameters, such as the $F_2$ flow rate, the addition $N_2$ flow rate and the substrate temperature. The etch rates of the various silicon nitride layers at the room temperature were initially increased and then decreased with the $N_2$ flow increased, which indicates an existence of the maximum etch rates. The etch rates of the silicon oxide layers were also significantly increased with the substrate temperature increased. In the present experiments the $F_2$ gas flow, addition $N_2$ flow rate and the substrate temperature were found to be the critical parameters in determining the etch rate of the silicon nitride layers

• Transactions on Electrical and Electronic Materials
• /
• v.1 no.1
• /
• pp.6-11
• /
• 2000

The hydrogen plasma treatment of silicon wafers in the reactive ion-etching mode was studied for the application to silicon-on-insulator wafers which were prepared using the wafer bonding technique. The chemical reactions of hydrogen plasma with surface were used for both surface activation and removal of surface contaminants. As a result of exposure of silicon wafers to the plasma, an active oxide layer was found on the surface. This layer was rendered hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposing time and power. In addition, the surface became smoother with the shorter plasma exposing time and power. The value of initial surface energy estimated by the crack propagation method was 506 mJ/㎡, which was up to about three times higher as compared to the case of conventional direct using the wet RCA cleaning method.

• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.11 no.5
• /
• pp.58-64
• /
• 2002

Mirror surface finish of Si-wafers has been achieved by rotary in-feed machining with cup-type wheels in ELID grinding. But the diameter of the workpiece is limited with the diameter of the grinding wheel in the in-feed machining method. In this study, some finding experiments by the rotary surface grinding machine with straight type wheels were conducted, by which the possible grinding area of the workpiece is independent of the diameter of the wheels. For the purpose of investigating the grinding characteristics of large scale diametrical silicon wafer, grinding conditions such as rotation speed of grinding wheels and revolution of workpieces are varied, and grinding machine used in this experiment is rotary type surface grinding m/c equipment with an ELID unit. The surface ground using the SD8000 wheels showed that mirror like surface roughness can be attained near 2~6 nm in Ra.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2001.04a
• /
• pp.946-949
• /
• 2001

Mirror surface finish of Si-wafers has been achieved by rotary in-feed machining with cup-type wheels in ELID grinding. But the diameter of the workpiece is limited with the diameter of the grinding wheel in the in-feed machining method. In this study, some grinding experiments by the rotary surface grinding machine with straight type wheels were conducted, by which the possible grinding area of the workpiece is independent of the diameter of the wheels. For the purpose of investigating the grinding characteristics of large scale diametral silicon wafer, grinding conditions such as rotation speed of grinding wheels and revolution of workpiece are varied, and grinding machine used in this experiment is rotary type surface grinding m/c equipped with an ELID unit. The surface ground using the SD8000 wheels showed that mirror like surface roughness can be attained near 2~6nm in Ra.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2003.10a
• /
• pp.363-366
• /
• 2003

In nanomachining processes, chemical effects are more dominant factor compared with physical deformation. For example, during the nanoscratch on a silicon surface in the atmosphere, micro protuberances are formed due to the mechanochemical reaction between the diamond tip and the surface. On the contrary, in case of chemically stable materials, such as ceramics or glasse, the surface protuberance are not formed. The purpose of this study is to understand effects of the mechanochemical reaction between tip and surfaces on deformation behaviors of hard-brittle materials. Nanometerscale elasoplastic deformation behavior of single crystal silicon (100) was characterized with the surface protuberance phenomena, and compared with that of borosilicate (Pyrex glass 7740).

• Journal of the Korean Society for Precision Engineering
• /
• v.23 no.1 s.178
• /
• pp.89-96
• /
• 2006

In this study, fabrication of the large area silicon mirror is accomplished by anisotropic wet etching using micromachining technology for implementation of integrated slim optical pickup and the process condition is also established for improving the mirror surface roughness. Until now, few results have been reported about the production of highly stepped $9.74^{\circ}$ off-axis-cut silicon wafers using wet etching. In addition rough surface of the mirror is achieved in case of tong etching time. Hence a novel method called magnetorheolocal finishing is applied to enhance the surface quality of the mirror plane. Finally, areal peak to valley surface roughness of mirror plane is reduced about 100nm in large area of $mm^2$ and it is applicable to optical pickup using infrared wavelength.

• Journal of the Semiconductor & Display Technology
• /
• v.13 no.1
• /
• pp.13-17
• /
• 2014

Since the semiconductor manufacturing requires the silicon wafers with extraordinary degree of surface flatness, the surface polishing of wafers from ingot cutting is an important process for deciding surface quality of wafers. The present study introduces the development of wafer polishing equipment and, especially, the wafer polishing head that employs the forced self-driving of installed silicon wafer as well as the wax wafer mounting technique. A series of wafer polishing tests have been carried out to investigate the effects of self-driving function in wafer polishing head. The test results for wafer planarization showed that the LLS counts and SBIR of polished wafer surfaces were generally improved by adopting the self-driven polishing head in wafer polishing stations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.177-178
• /
• 2006

We investigate anisotropic texturing method for crystalline silicon solar cells with sodium carbonate solutions. Texturing temperature have a large effect on the density of pyramid. The dependence of the surface reflectance on solution temperature and the etching time was investigated. The surface morphology was observed by scanning electron microscope and the surface reflectance was evaluated. The reflection from the silicon surface in the wavelength range 400 to 1000nm is reduced to about 12%.