• Title/Summary/Keyword: Silicon Surface

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Homoepitaxial Growth Mode of $Si(5\;5\;12)-2\times1$ Confirmed by Scanning Tunneling Microscope (STH) (주사터널링현미경(STM) 기법으로 확인된 $Si(5\;5\;12)-2\times1$ 호모에피텍시 성장 방법)

  • Kim Hidong;Cho Yumi;Seo Jae M.
    • Journal of the Korean Vacuum Society
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    • v.15 no.1
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    • pp.37-44
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    • 2006
  • The homoepitaxy of Si(5 5 12) at $495^{\circ}C$ has been studied by Scanning Tunneling Microscopy under ultrahigh vacuum. A Si-dimer is the basic building-block and preferentially adsorbs on a unique site, that is, the Si-dimer/adatom site at the (337) and the (225) subsections within the Si(5 5 12) unit cell. The Si(5 5 12) unit cell is faceted to $3\times(337)$ subsections filled with Si-addimers and $1\times(113)$ subsection. In this step the tetramer at the other (337) section within the unit cell is transformed to a dimer/adatom site which can accept Si-dimers. Each (337) section is faceted to $1\times(112)\;and\;1\times(113)$, and then finally the unit cell of Si(5 5 12) is faceted to $3\tiems(112)\;and\;4\times(113)$ and forms the facet of effective height, $2.34{\AA}$. In this step, mutual transformation between the honeycomb chain and the dimer/adatom occurs. Finally, the valley between (112) and (113) facets is filled. If once the last step is completed, the uniform and planar Si(5 5 12) terrace is recovered. From the present study, therefore, it can be concluded that the homoepitaxy on Si(5 5 12) is periodically achieved and such growth mode is quite unique since faceting of the substrate-unit-cell plays a critical role for controlling uniformity of the overlayer.

Microstructure Evolution and Properties of Silicides Prepared by dc-sputtering (스퍼터링으로 제조된 니켈실리사이드의 미세구조 및 물성 연구)

  • An, Yeong-Suk;Song, O-Seong;Lee, Jin-U
    • Korean Journal of Materials Research
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    • v.10 no.9
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    • pp.601-606
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    • 2000
  • Nickel mono-silicide(NiSi) shows no increase of resistivity as the line width decreases below 0.15$\mu\textrm{m}$. Furthermore, thin silicide can be made easily and restrain the redistribution of dopants, because NiSi in created through the reaction of one nickel atom and one silicon atom. Therefore, we investigated the deposition condition of Ni films, heat treatment condition and basic properties of NiSi films which are expected to be employed for sub-0.15$\mu\textrm{m}$ class devices. The nickel silicide film was deposited on the Si wafer by using a dc-magnetron sputter, then annealed at the temperature range of $150~1000^{\circ}C$. Surface roughness of each specimen was measured by using a SPM (scanning probe microscope). Microstructure and qualitative composition analysis were executed by a TEM-EDS(transmission electron microscope-energy dispersive x-ray spectroscope). Electrical properties of the materials at each annealing temperature were measured by a four-point probe. As the results of our study, we may conclude that; 1. SPM can be employed as a non-destructive process to monitor NiSi/NiSi$_2$ transformation. 2. For annealing temperature over $800^{\circ}C$, oxygen pressure $Po_2$ should be kept below $1.5{\times}10^{-11}torr$ to avoid oxidation of residual Ni. 3. NiSi to $NiSi_2$ transformation temperature in our study was $700^{\circ}C$ from the four-point probe measurement.

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THE PHYSCIAL PORPERTIES OFY Y2O3-CONTAINING GLASS INFILTRATED ALUMINA CORE MADE BY PRESSURELESS POWDER PACKING METHOD (무가압 분말충전 알루미나에 이트리아를 함유한 붕규산염 유리를 침투시킨 코아 도재의 물성)

  • Whang, Seung-Woo;Lee, Keun-Woo
    • The Journal of Korean Academy of Prosthodontics
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    • v.35 no.1
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    • pp.221-243
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    • 1997
  • The objective of this study was to characterize the mechanical properties of $Y_{2}O_{3}$-containing glass infiltrated ceramic core material, which was made by pressureless powder packing method. A pure alumina powder with a grain size of about $4{\mu}m$ was packed without pressure is silicon mold to form a bar shaped sample, and applied PVA solution as a binder. Samples were sinterd at $1350^{\circ}C$ for 1 hour. After cooling, $Y_{2}O_{3}$-containing glass($SiO_{2},\;Y_{2}O_{3},\;B_{2}O_{3},\;Al_{2}O_{3}$, ect) was infiltrated to the sinterd samples at $1300^{\circ}C$ for 2 hours and cooled. Six different proportions $Y_{2}O_{3}$ of were used to know the effect of the mismatch of the thermal expansion coefficient between alumina powder and glass. The samples were ground to $3{\times}3{\times}30$ mm size and polished with $1{\mu}m$ diamond paste. Flexural strength, fracture toughness, hardness and other physical properties were obtained, and the fractured surface was examined with SEM and EPMA. Ten samples of each group were tested and compared with In-Ceram(tm) core materials of same size made in dental laboratory. The results were as follows : 1. The flexural strengths of group 1 and 3 were significantly not different with that of In-Ceram, but other experimental groups were lower than In-Ceram. 2. The shrinkage rate of samples was 0.42% after first firing, and 0.45% after glass infiltration. Total shrinkage rate was 0.87%. 3. After first firing, porosity rate of experimental groups was 50%, compared with 22.25% of In-Ceram. After glass infiltration, porosity rate of experimental groups was 2%, and 1% in In-Ceram. 4. There was no statistical difference in hardness between two materials tested, but in fracture toughness, group 2 and 3 were higher than In-Ceram. 5. The thermal expansion coefficients of experimental groups were varied to $4.51-5.35{\times}10^{-6}/^{\circ}C$ according to glass composition, also the flexural strengths of samples were varied. 6. In a view of SEM, many microparticles about $0.5{\mu}m$ diameter and $4{\mu}m$ diameter were observed in In-Ceram. But in experimental group, the size of most particles was about $4{\mu}m$, and a little microparticles was observed. The results obtained in this study showed that the mismatch of the thermal expansion coefficients between alumina powder and infiltrated glass affect the flexural strength of alumin/glass composite. The $Y_{2}O_{3}$-containing glass infiltrated ceramic core made by powder packing method will takes less time and cost with sufficient flexural strength similar to all ceramic crown made with slip casting technique.

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Characteristics of Low Dielectric Constant SiOF Thin Films with Post Plasma Treatment Time (플라즈마 후처리 시간에 따른 저유전율 SiOF 박막의 특성)

  • Lee, Seok Hyeong;Park, Jong Wan
    • Journal of the Korean Vacuum Society
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    • v.7 no.3
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    • pp.267-267
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    • 1998
  • The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films have been of interest due to their lower dielectric constant and compatibility with existing process tools. However instability issues related to bond and increasing dielectric constant to water absorption when the SiOF films was exposured to atmospheric ambient. Therefore, the purpose of this research is to study the effect of post oxygen plasma treatment on the resistance of moisture absorption and reliability of SiOF film. Improvement of moisture absorption resistance of SiOF film is due to the forming of thin SiO₂layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the number of Si-F bonds that tend to associate with OH bonds. However, the dielectric constant was increased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and 300℃ of substrate temperature.

Characterization and Anti-Gastric Ulcer Activity of Bamboo Salt (죽염의 특성 분석과 항위궤양효과)

  • 김승희;강석연;정기경;김태균;한형미;류항묵;문애리
    • Journal of Food Hygiene and Safety
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    • v.13 no.3
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    • pp.252-257
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    • 1998
  • Bamboo salt has been used as a traditional remedy for gastric ulcer and gastro-intestinal disorders. It is produced by baking the salt packed in bamboo cylinder nine times under the fire of pine tree. Three of commercially available bamboo salt products (bamboo salt A, B, and C) were characterized by qualitative and quantitative analyses using inductively coupled plasma (ICP) spectrometer, ion chromatograph (IC), X-ray diffractometer (XRD), and electron microscope (EM). Compared with crude salt, the contents of iron, silicon, potassium, and phosphate in the bamboo salt products were higher whereas the sulfate content was lower. Water-insoluble fraction of bamboo salts contained the following compounds; MgO, $SiO_2,\;Mg_2Si0_4,\;and\;CaMgSi0_4$. The study on the microscopic structures of the bamboo salts were shown to have smooth surface and fused shape compared with crude salt. Among the three bamboo salt products, product A was used to test a possible inhibitory effect on gastric acid secretion. Each test material (bamboo salt A, crude salt, and reagent-grade NaCl) was given orally to Sprague-Dawley rats at doses of 0.2, 1.0, and 2.0 g/kg for 28 days before pyrolus ligation. Twenty four hours after the last administration of the test materials, volume, pH, total acidity, and pepsin activity of gastric juice were measured by the Shay-ligation method. No significant differences were observed in the secretion of gastric acid between treated groups (bamboo salt-, crude salt- and reagent-grade NaCI-treated groups) and control group (distilled water-treated group). This result demonstrated that bamboo salt did not exert anti-ulcer activities in experimental animals used in the present study.

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GaN Epitaxy with PA-MBE on HF Cleaned Cobalt-silicide Buffer Layer (HF 크리닝 처리한 코발트실리사이드 버퍼층 위에 PA-MBE로 성장시킨 GaN의 에피택시)

  • Ha, Jun-Seok;Chang, Ji-Ho;Song, Oh-Sung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.2
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    • pp.409-413
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    • 2010
  • We fabricated 10 nm-thick cobalt silicide($CoSi_2$) as a buffer layer on a p-type Si(100) substrate to investigate the possibility of GaN epitaxial growth on $CoSi_2/Si(100)$ substrates. We deposited 500 nm-GaN on the cobalt silicide buffer layer at low temperature with a PA-MBE (plasma assisted-molecular beam epitaxy) after the $CoSi_2/Si$ substrates were cleaned by HF solution. An optical microscopy, AFM, TEM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. For the GaN samples without HF cleaning, they showed no GaN epitaxial growth. For the GaN samples with HF cleaning, they showed $4\;{\mu}m$-thick GaN epitaxial growth due to surface etching of the silicide layers. Through XRD $\omega$-scan of GaN <0002> direction, we confirmed the cyrstallinity of GaN epitaxy is $2.7^{\circ}$ which is comparable with that of sapphire substrate. Our result implied that $CoSi_2/Si(100)$ substrate would be a good buffer and substrate for GaN epitaxial growth.

Growth characteristics of titanium boride($\textrn{TiB}_{x}$) thin films deposited by dual-electron-beam evaporation (2원전자빔 증착법에 의한 티타늄붕화물($\textrn{TiB}_{x}$) 박막의 성장특성)

  • 이영기;이민상;임철민;김동건;진영철
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.1
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    • pp.20-26
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    • 2001
  • Titanium boride ($\textrn{TiB}_{x}$) films were deposited on (100) silicon substrates at the substrate temperature of $500^{\circ}C$ by means of the co-evaporation of titanium and boron evaporants during deposition. The co-evaporation method makes it possible to deposit the non-stoichiometric films with different boron-to-titanium ratio($0{\le}B/Ti \le 2.5$). The resistivity increases linearly as the boron-to-titanium ratio in the as-deposited films is increased. The surface roughness of $\textrn{TiB}_{x}$ films is changed as a function of the boron-to-titanium ratio. The XRD spectrum for pure titanium film shows a highly (002) preferred orientation. For B/Ti=0.59 ratio only a single TiB phase that shows a (111) preferred orientation is observed. However, the $\textrn{TiB}_{x}$ phase with the hexagonal structure of the $AlB_2$(C32) type appears as the boron concentration increase, and only a single $\textrn{TiB}_{x}$ phase is observed for $B/Ti \ge 2.0$ ratio. The $\textrn{TiB}_{x}$/Si samples reveal a tensile stress (3~$20{\times}^9$dyn/$\textrm{cm}^2$) in the overall composition of the films, although the magnitude of the residual stresses is depended on the nominal B/Ti ratio.

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Simulation of Explosion of the Semi-Fluid with Strong Elasticity Applying Coulomb-Mohr Theory (쿨롱-모어 이론을 이용한 강탄성 반유동체 폭발 시뮬레이션)

  • Kim, Gyeong-Su;Sung, Su-Kyung;Shin, Byeong-Seok
    • Journal of Korea Game Society
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    • v.15 no.5
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    • pp.143-152
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    • 2015
  • Unlike simulating general 'particle-based fluid explosion', simulating fluid with elasticity requires various experimental methods in order to show the realistic deformation of the matter. The existing studies on particle-based viscoelastic fluid only focused on matters' plastic deformation which can be found in mud or paint, based on the maximum distortion energy theory and maximum shear stress theory. However, these former researches could not simulate the brittle deformation which can be seen from silicon or highly elastic rubber when great external forces above limits are applied. This study suggests a brittle simulation method based on the Coulomb-Mohr theory, the idea that a yield occurs when maximum stress on a matter reaches to its rupture stress. This theory has a significant difference from the existing particle-based simulations which measures the forces on a matter by length or volume. Using a strong-elastic semifluid which Coulomb-Mohr theory is applied, realistic deformation process of a matter was observed as its forced surface reached to the rupture stress. When semifluid hit the ground, the impact of deformation can be explained by using Coulomb-Mohr theory.

Study of Supercritical Carbon Dioxide/n-Butyl Acetate Co-solvent System with High Selectivity in Photoresist Removal Process (포토레지스트 공정에서 높은 선택성을 가지는 초임계 이산화탄소/n-butyl acetate 공용매 시스템 연구)

  • Kim, Dong Woo;Heo, Hoon;Lim, Kwon Teak
    • Clean Technology
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    • v.23 no.4
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    • pp.357-363
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    • 2017
  • In this study, the supercritical carbon dioxide ($scCO_2$)/ n-butyl acetate (n-BA) co-solvent system was employed to remove an unexposed negative photoresist (PR) from the surface of a silicon wafer. In addition, the selectivity of the $scCO_2$/n-BA co-solvent system was confirmed for the unexposed and exposed negative PR. Optimum conditions for removal of the unexposed PR were obtained from various conditions such as pressure, temperature and n-BA ratio. The n-BA was highly soluble in $scCO_2$ without cloud point and phase separation in mostly experimental conditions. However, the $scCO_2$/n-BA co-solvent was phase separated at 100 bar, above $80^{\circ}C$. The unexposed and exposed PR was swelled in $scCO_2$ solvent at all experimental conditions. The complete removal of unexposed PR was achieved from the reaction condition of 160 bar, 10 min, $40^{\circ}C$ and 75 wt% n-BA in $scCO_2$, as measured by ellipsometry. The exposed photoresist showed high stability in the $scCO_2$/n-BA co-solvent system, which indicated that the $scCO_2$/n-BA co-solvent system has high selectivity for the PR removal in photo lithograph process. The $scCO_2$/n-BA co-solvent system not only prevent swelling of exposed PR, but also provide efficient and powful performance to removal unexposed PR.

Elastic properties of addition silicone interocclusal recording materials (부가중합형 실리콘 교합인기재의 탄성 특성)

  • Lee, Young-Ok;Kim, Kyoung-Nam
    • Journal of Korean society of Dental Hygiene
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    • v.12 no.3
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    • pp.513-520
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    • 2012
  • Objectives : In this study, contact angle and shore D hardness were measured, and a shark fin test was conducted after selecting five addition silicon(Blu-Mousse, BM; EXABITE II, EX; PERFECT, PF; Regisil$^{(R)}$ Rigid, RE; Silagum$^{(R)}$, SI) in order to figure out the properties of elastomeric interocclusal recording materials and reduce errors at interocclusal recording. 8) Methods : A contact angle was measured using a contact angle analyzer. After placing a drop of liquid on the surface of the specimens of interocclusal recording materials, a contact angle was photographed with a CCD camera on the equipment. In terms of a shark fin test, interocclusal recording materials were mixed for the time proposed by the manufacturer and inserted into the split ring of the Shark fin device. Twenty (20) seconds exactly, a metal rod was removed to make the materials slowly absorbed. Once they hardened, fin height was measured with a caliper after separating molds and trimming the specimens. The shore D hardness was measured with a shore D hardness tester(Model HPDSD, Hans Schmidt & Co. Gmbh, Germany) in sixty (60) minutes after fabricating specimens. In each experiment, five specimens, mean and standard deviation were calculated. A one-way ANOVA test was performed at the p>0.05 level of significance. In terms of correlation among the tests, Pearson correlation coefficient was estimated. For multiple comparison, Scheffe's test was carried out. Results : A contact angle was the highest in EX with $99.23^{\circ}$ (p<0.05) while the result of the shark fin test was the longest in RE with 5.45mm. SI was the lowest (0.27mm) with statistical significance. Among the interocclusal recording materials, significant difference was observed in terms of means (p<0.05). The shore D hardness was the highest in SI with 31.0 while RE was significantly low with 16.4 (p<0.05). Among the materials, statistically significant difference was observed in terms of means when compared to the rest materials (RE), BM, RE and SI (PF and EX) and the remaining materials (BM and SI) (p<0.05). In terms of correlations among the tests, a negative correlation occurred between shore D hardness and shark fin test(r=-0.823, p=0.000). Conclusions : According to the study above, it is necessary to understand the properties of interocclusal recording materials and consider contact angle, shark fin test and properties of shore D hardness to select appropriate materials.