• Title/Summary/Keyword: Silicon Shield

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Development of High Energy Particle Detector for the Study of Space Radiation Storm

  • Jo, Gyeong-Bok;Sohn, Jongdae;Choi, Cheong Rim;Yi, Yu;Min, Kyoung-Wook;Kang, Suk-Bin;Na, Go Woon;Shin, Goo-Hwan
    • Journal of Astronomy and Space Sciences
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    • v.31 no.3
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    • pp.277-283
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    • 2014
  • Next Generation Small Satellite-1 (NEXTSat-1) is scheduled to launch in 2017 and Instruments for the Study of Space Storm (ISSS) is planned to be onboard the NEXTSat-1. High Energy Particle Detector (HEPD) is one of the equipment comprising ISSS and the main objective of HEPD is to measure the high energy particles streaming into the Earth radiation belt during the event of a space storm, especially, electrons and protons, to obtain the flux information of those particles. For the design of HEPD, the Geometrical Factor was calculated to be 0.05 to be consistent with the targets of measurement and the structure of telescope with field of view of $33.4^{\circ}$ was designed using this factor. In order to decide the thickness of the detector sensor and the classification of the detection channels, a simulation was performed using GEANT4. Based on the simulation results, two silicon detectors with 1 mm thickness were selected and the aluminum foil of 0.05 mm is placed right in front of the silicon detectors to shield low energy particles. The detection channels are divided into an electron channel and two proton channels based on the measured LET of the particle. If the measured LET is less than 0.8 MeV, the particle belongs to the electron channel, otherwise it belongs to proton channels. HEPD is installed in the direction of $0^{\circ}$, $45^{\circ}$, $90^{\circ}$ against the along-track of a satellite to enable the efficient measurement of high energy particles. HEPD detects electrons with the energy of 0.1 MeV to several MeV and protons with the energy of more than a few MeV. Thus, the study on the dynamic mechanism of these particles in the Earth radiation belt will be performed.

Changes according to the geometry of the shield using MCNP code system (MCNP코드 시스템을 이용한 차폐물 geometry에 따른 결과 변화에 대한 연구)

  • Kang, Ki-byung;Lee, Nam-ho;Hwang, Young-kwan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.05a
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    • pp.1031-1033
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    • 2013
  • Radiation protection, as well as finding the location of the radiation source, such as the Fukushima radiation leak accident, it is important for the early and safe disposal of nuclear accident. The three-dimensional position of the radiation source detection distance of the radiation source can provide additional information to the existing radiation detectors radiation of a two-dimensional position detection function and then it can play a decisive role in the radiation contaminant removal and decontamination work. In this research, three-dimensional semiconductor sensor based on dual radiation detectors radiation source device visible part of the research and development of efficient radiation sensor unit on the design of the shielding structure.The lightweight, high-efficiency radiation source locator implementation was attempted for the structure and thickness of the shielding and collimator to perform the simulation of the radiation shielding for the various parameters of the shape model through design the optimal structure of the MCNP-based heavy-duty tungsten shielding, lead shielding The results of this study, is a compact, lightweight three-dimensional radiation source detection and future of silicon - based sensors will be used in the study.

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Improvement of detection sensitivity of impurities on Si wafer surface using synchrotron radiation (방사광을 이용한 Si 웨이퍼 표면불순물 검출감도 향상)

  • 김흥락;김광일;강성건;김동수;윤화식;류근걸;김영주
    • Journal of the Korean Vacuum Society
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    • v.8 no.1
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    • pp.13-19
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    • 1999
  • Total reflection X-ray fluorescence spectroscopy using synchrotron radiation source called as TRSFA was explored to achieve high sensitivities to impurity metals on Si wafer surface. It consists of monochromating part to select a specific wavelength, slit part to shield direct beam and to control monochromated beam, and main chamber to dectect fluorescent X-ray counts of impurities on si wafer. Monochromated X-ray of 10.90 KeV was selected and the optimum total reflection condition on silicon wafer was obtained through tuning the dead time and fluorescent X-ray count of Si and Fe. TRSFA system could increase the sensitivity as high as 50 times in comparision with TRXFA using normal X-ray source. But the trend was varied since the surface conditions of Si wafers and, therefore, the reflectivities were different. Furthemore, there seems to be a promising path to reaching a detection limit useful to the next generation metal impurities control, because Fe impurity below to the $5\times10^{9}\textrm{atomas/cm}^2$ can be detectable through the developed TRSFA system.

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