• Journal of Sensor Science and Technology
• /
• v.21 no.2
• /
• pp.121-126
• /
• 2012

Piezoresistive type contact force sensor array is fabricated by (111) Silicon bulk micromachining for continuous blood pressure monitoring. Length and width of the unit sensor structure is $200{\mu}m$ and $190{\mu}m$, respectively. The gap between sensing elements is only $10{\mu}m$. To achieve wafer level packaging, the sensor structure is capped by PDMS soft cap using wafer molding and bonding process with $10{\mu}m$ alignment precision. The resistance change over contact force was measured to verify the feasibility of the proposed sensor scheme. The maximum measurement range and resolution is 900 mm Hg and 0.57 mm Hg, respectively.

• Journal of Integrative Natural Science
• /
• v.3 no.2
• /
• pp.117-121
• /
• 2010

Silicon quantum dots base on photoluminescent porous silicon were prepared from an electrochemical etching of n-type silicon wafer (boron-dopped<100> orientation, resistivity of 1~10 ${\Omega}-cm$) and used as a alcohol sensor. Silicon quantum dots displayed an emission band at the wavelength of 675 nm with an excitation wavelength of 480 nm. Photoluminescence of silicon quantum dots was quenched in the presence of alcohol vapors such as methanol, ethanol, and isopropanol. Quenching efficiencies of 21.5, 32.5, and 45.8% were obtained for isopropanol, ethanol, and methanol, respectively. A linear relationship was obtained between quenching efficiencies and vapor pressure of analytes used. Quenching photoluminescence was recovered upon introducing of fresh air after the detection of alcohol. This provides easy fabrication of alcohol sensor based on porous silicon.

• The Journal of the Acoustical Society of Korea
• /
• v.14 no.2E
• /
• pp.12-18
• /
• 1995

Capactive miro pressure sensor is simulated with finite element methods to analyze the effect of geometrical variation on its performace. Sensor material is th silicon single crystal. The sensor consists of a disk type diaphragm and several bridges connected to a rigid frame. Structural variables in consideration are the thickness of the diaphragm and the bridges, radius of the circular plate, and the number of bridges. Results of static, dynamic and sensitivity analyses reveal the best structure of the sensor among the fifteen cases under investigation.

• Journal of Sensor Science and Technology
• /
• v.18 no.2
• /
• pp.147-153
• /
• 2009

A thermal flow sensor has been fabricated and characterized, consisting of a center resistive heater surrounded by two upstream and one downstream temperature sensing resistors. The heater and temperature sensing resistors are fabricated from nitrogen-doped(n-type) polycrystalline silicon carbide(poly-SiC) deposited by LPCVD(low pressure chemical vapor deposition) on LPCVD silicon nitride films on a Si substrate. Cavities were etched into the Si substrate from the front side to create suspended silicon nitride membranes carrying the poly-SiC elements. One upstream sensor is located $50{\mu}m$ from the heater and has a sensitivity of $0.73{\Omega}$/sccm with ${\sim}15\;ms$ rise time in a dynamic range of 1000 sccm. N-type poly-SiC has a linear negative temperature coefficient and a TCR(temperature coefficient of resistance) of $-1.24{\times}10^{-3}/^{\circ}C$ from room temperature to $100^{\circ}C$.

• Journal of Sensor Science and Technology
• /
• v.2 no.1
• /
• pp.19-27
• /
• 1993

Capacitive pressure sensor for low pressure measurements has been fabricated by using $n^{+}$ epitaxial layer electrochemical etching stop and glass-to-silicon electrostatic bonding technique. The sensor had hybrid configuration of a sensor chip, which consists of sensor capacitor and reference capacitor, and two output signal detection IC chips. A fabricated sensor, with a $1.0{\times}1.0 mm^{2}$ square size and a $10{\mu}m$ thick flat diaphragm, showed a 7.1 pF zero pressure capacitance, and 5.2 % F.S, sensitivity in 10 KPa pressure range. By using a capacitance to voltage converter, the thermal zero shift of 0.051 %F.S./$^{\circ}C$ and the thermal sensitivity shift of 0.12 %F.S./$^{\circ}C$ for temperature range of $5{\sim}45^{\circ}C$ were obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.274-274
• /
• 2008

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-SiC/SOI pressure sensor presents a high-sensitivity and excellent temperature stability.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.9 no.5
• /
• pp.105-111
• /
• 2000

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor, the size of the pressure sensor diaphragm have become smaller year by year, and a microaccelerometer with a size less than 200~300${\mu}{\textrm}{m}$ has been realized. Over the past four or five years, numerical modeling of microsensors and microstructures has gradually been developed as a field of microelectromechanical system(MEMS) design process. In this paper, we study some of the micromachining processes of single crystal silicon(SCS) for the microaccelerometer, and their subsequent processes which might affect thermal and mechanical loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in structural engineering discipline for component design of microaccelerometer. Temperature rise sufficiently low at the suspended beams. Instead, larger temperature gradient can be seen at the bottom of paddle part. The center of paddle part becomes about 5~2$0^{\circ}C$ higher than the corner of paddle and suspended beam edges.

• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.2254-2256
• /
• 2000

This paper presents an implantable telemetry LC resonance-type pressure sensor for the measurement of the ventricle pressure. This sensor consists of a capacitor and an inductor. This resonant circuit is magnetically coupled with an external antenna coil. The resonance frequency of the circuit decreases as the sensor capacitance is increased by the applied pressure. The inductance and the capacitance are 428nH and 0.98${\mu}F$, respectively. The resonance frequency is 245.7MHz when the differential pressure is zero. The sensitivity of the sensor is 9.477kHz/Pa.

• Journal of Sensor Science and Technology
• /
• v.4 no.1
• /
• pp.29-34
• /
• 1995

The absolute silicon pressure sensors are fabricated using SDB(silicon direct bonded) wafer. The fabricated pressure sensors consist of four bridge type piezoresistances and a diaphragm which plays a role of mechanic amplifier to supplying pressure. In order to make the diaphragm cavity in low vaccum condition, we anodically bonded Si diaphragm with pyrex 7740 glass in 0.02mmHg, at $400^{\circ}C$. The sensitivity and offset voltage of the fabricated sensors were $30.4{\mu}V/VmmHg$ and 30.6mV, respectively.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.7
• /
• pp.82-88
• /
• 1993

This paper describes fabrication of relative type capacitive pressure sensor to be in great demand for many fields. The fabricated sensor consists of two parts` a sensing diaphragm and a pyrox glass cover. The sensor size is 4.5${\times}3.4mm$^{2})$ and 400$\mu$m thick. To improve the nonlinearity, this sensor is designed a rectangular silicon diaphragm with a center boss structure, and in order to improve the temperature characteristics of the sensor in a packaging process, the sensing element is mounted on the pyrex glass support. Some suggestions toward the design and fabrication of improved sensors have been presented. The zero pressure capacitance, Co of sensor is 26.57pF, and the change of capacitance, ${\Delta}$C is 1.55pF from 0Kgf/Cm$^{2}$ to 1Kgf/Cm$^{2}$ at room temperature. The nonlinearity of the sensor output with center boss diaphragm is 1.29%F.S., and thermal zero shift and thermal sensitivity shift is less than 1.43%F.S./$^{\circ}C$and 0.14% F.S./$^{\circ}C$, respectively.