• 한국기계가공학회지
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• 제11권1호
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• pp.1-6
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• 2012

The polishing of silicon wafers has an important role in semiconductor manufacturing. Generally, getting a flat surface such as a mirror is the purpose of the process. The wafer surface roughness is affected by many variables such as the characteristics of the carrier head unit, operation, speed, the pad and slurry temperature. Optimum process conditions for experimental temperature, pH value, down-force, slurry ratio are investigated, time is used as a fixed factor. This study carried out a series of experiments at varying platen, chuck rpm and oscillation cpm taking particular note of the difference between the rpm and the affect it has on the surface roughness. In this experiment determine the optimum conditions for polishing silicone wafers.

• 한국정밀공학회지
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• 제20권9호
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• pp.135-141
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• 2003

MEMS structures generally have been fabricated using surface-machining method, but the interface failure between silicon substrate and evaporated thin film frequently takes place due to the residual stress inducing by the applied the various loads. And the very important physical property in the heated environment is the linear coefficient of thermal expansion. Therefore this paper studied the residual stress caused the thermal loads in the thin film and introduced the simple method to measure the trend of the residual stress by the indentation. Specimens were made of materials such as Al, Au and Cu and thermal load was applied repeatedly. The residual stress was measured by nano-indentation using AFM and FEA. The existence of the residual stress due to thermal load was verified by the experimental results. The indentation length of the thermal loaded specimens increased minimum 11.8％ comparing with the virgin thin film caused by tensile residual stress. The finite element analysis results are similar to indentation test.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2004년도 추계학술대회논문집
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• pp.36-39
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• 2004

Glass molding is an advantageous method to manufacture glass micro optical components. However, it is difficult to make Tungsten Carbide core for glass microlens array. We have developed novel method to fabricate Tungsten Carbide core for micro glass components using pressure forming. Silicon masters were fabricated by micro machining. Tungsten Carbide core was fabricated by pressure forming and sintering. And we made high quality surface of Tungsten Carbide core by using the magnetic-field-assisted polishing process.

• International Journal of Precision Engineering and Manufacturing
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• 제9권2호
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• pp.39-43
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• 2008

Atmospheric pressure plasma polishing (APPP) is a noncontact precision machining technology that uses low temperature plasma chemical reactions to perform atom-scale material removal. APPP is a complicated process, which is affected by many factors. Through a preliminary theoretical analysis and simulation, we confirmed that some of the key factors are the radio frequency (RF) power, the working distance, and the gas ratio. We studied the influence of the RF power and gas ratio on the removal rate using atomic emission spectroscopy, and determined the removal profiles in actual operation using a commercial form talysurf. The experimental results agreed closely with the theoretical simulations and confirmed the effect of the working distance. Finally, we determined the element compositions of the machined surfaces under different gas ratios using X-ray photoelectron spectroscopy to study the influence of the gas ratio in more detail. We achieved a surface roughness of Ra 0.6 nm on silicon wafers with a peak removal rate of approximately 32 $mm^{3}$/min.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 1999년도 춘계학술대회 논문집
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• pp.51-55
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• 1999

Recently, manufacturing work has been transformed to advanced technology intensive form from mass production with a little items required in the past. It was demanded that superior workpiece surface integrity. However, the study of ductile mode machining was proceeded actively.In this paper, it is developed Ultra-Micro Indentation Device using the PZT actuator. Experimentally, by using theUltra-Micro Indentation device, the micro fracture behavior of the silicon wafer was invesgated. It was possible that ductile-brittle transition point in ultimate surface of brittle material can be detected by adding an acoustic emission sensor system to the Ultra-Micro Indentation apparatus.

• 대한기계학회논문집B
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• 제37권12호
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• pp.1159-1165
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• 2013

파우더 블라스팅은 미세 유리가공법으로서 가공속도가 빠르고 저비용의 장점이 있지만 유리를 취성파괴 시키기 때문에 표면거칠기가 좋지않다. 블라스팅된 표면에 저압의 워터젯을 분사하여 표면에서의 연마 슬러리의 흐름을 통해 표면거칠기를 저감할 수 있다. 본 연구에서는 소다라임 유리에 블라스팅으로 마이크로 채널을 가공한 후 워터젯을 연속 적용하고, 마이크로 채널의 표면거칠기 및 단면 형상의 변화의 과정을 관찰하였다. 워터젯의 적용결과, 초기단계에서는 블라스팅에 의한 미세 요철이 제거되었고, 이후 표면하부의 크랙이 제거되어 평균 표면거칠기 50 nm 근방의 매끈한 표면을 얻을 수 있었다. 표면거칠기 저감에 동반하여 채널단면의 확장 과정도 함께 관측하였다. 마지막으로 제안한 방법에 의해 미세유체칩의 가공 결과를 제시하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1507-1510
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• 2005

This study was carried out as a part of the research on the development of a maskless and electroless process for fabricating metal micro/nanostructures by using a nanoindenter and an electroless deposition technique. $2-\mu{m}-deep$ indentation tests on Ni and Cu samples were performed. The elastic recovery of the Ni and Cu was 9.30% and 9.53% of the maximum penetration depth, respectively. The hardness and the elastic modulus were 1.56 GPa and 120 GPa for Ni and 1.49 GPa and 100 GPa for Cu. The effect of single-point diamond machining conditions such as the Berkovich tip orientation (0, 45, and $90^{\circ}$) and the normal load (0.1, 0.3, 0.5, 1, 3, and 5 mN), on both the deformation behavior and the morphology of cutting traces (such as width and depth) was investigated by constant-load scratch tests. The tip orientation had a significant influence on the coefficient of friction, which varied from 0.52-0.66 for Ni and from 0.46-0.61 for Cu. The crisscross-pattern sample showed that the tip orientation strongly affects the surface quality of the machined area during scratching. A selective deposition of Cu at the pit-like defect on a p-type Si(111) surface was also investigated. Preferential deposition of the Cu occurred at the surface defect sites of silicon wafers, indicating that those defect sites act as active sites for the deposition reaction. The shape of the Cu-deposited area was almost the same as that of the residual stress field.

• 한국정밀공학회지
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• 제30권4호
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• pp.397-402
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• 2013

In this study, we carried out the each lines of section, using GC (green silicon carbide) whetstone, the SCM415 material which separated by after and before heat treatments process, in 3+2 axis machining centers for integrated grinding after cutting end mill works, the spindle speed 8000 rpm and feed rate 150 mm/min. For the analysis of the centerline average roughness (Ra), we measured by 10 steps stages. Using Finite element analysis, we found the result of the load analysis effect of the assembly parts, when applied the 11 kg's load on both side of the ATC (Automatic tool change) arm. The result is as follows. For the centerline average roughness (Ra) in the non-heat treatment work pieces, are appeared the most favorable in the tenth section are $0.510{\mu}m$, that were shown in the near the straight line section which is the smallest deformation of curve. In addition, the bad surface roughness appears on the path is to long by changing angle, the more inclined depth of cut, because the chip discharging is not smoothly.

• 한국재료학회지
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• 제15권11호
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• pp.705-710
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• 2005

NIL (nanoimprint lithography) technique has demonstrated a high potential for wafer size definition of nanometer as well as micrometer size patterns. During the replication process by NIL, the stiction between the stamp and the polymer is one of major problems. This stiction problem is moi·e important in small sized patterns. An antistiction layer prevents this stiction ana insures a clean demolding process. In this paper, we were using a TCP (transfer coupled plasma) equipment and $C_4F_8$ as a precursor to make a Teflon-like antistiction layer. This antistiction layer was deposited on a 6 inch silicon wafer to have nanometer scale thicknesses. The thickness of deposited antistiction layer was measured by ellipsometry. To optimize the process factor such as table height (TH), substrate temperature (ST), working pressure (WP) and plasma power (PP), we were using a design of experimental (DOE) method. The table of full factorial arrays was set by the 4 factors and 2 levels. Using this table, experiments were organized to achieve 2 responses such as deposition rate and non-uniformity. It was investigated that the main effects and interaction effects between parameters. Deposition rate was in proportion to table height, working pressure and plasma power. Non-uniformity was in proportion to substrate temperature and working pressure. Using a response optimization, we were able to get the optimized deposition condition at desired deposition rate and an experimental deposition rate showed similar results.

• 한국정밀공학회지
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• 제23권8호
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• pp.171-177
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• 2006

This study was performed as a part of the research on the development of a maskless and electroless process for fabricating metal micro/nanostructures by using a nanoindenter and an electroless deposition technique. $2-{\mu}m$-deep indentation tests on Ni and Cu samples were performed. The elastic recovery of the Ni and Cu was 9.30% and 9.53% of the maximum penetration depth, respectively. The hardness and the elastic modulus were 1.56 GPa and 120 GPa for Ni and 1.51 GPa and 104 GPa for Cu. The effect of single-point diamond machining conditions such as the Berkovich tip orientation (0, 45, and $90^{\circ}$ ) and the normal load (0.1, 0.3, 0.5, 1, 3, and 5 mN), on both the deformation behavior and the morphology of cutting traces (such as width and depth) was investigated by constant-load scratch tests. The tip orientation had a significant influence on the coefficient of friction, which varied from 0.52-0.66 for Ni and from 0.46- 0.61 for Cu. The crisscross-pattern sample showed that the tip orientation strongly affects the surface quality of the machined are a during scratching. A selective deposition of Cu at the pit-like defect on a p-type Si(111) surface was also investigated. Preferential deposition of the Cu occurred at the surface defect sites of silicon wafers, indicating that those defect sites act as active sites for the deposition reaction. The shape of the Cu-deposited area was almost the same as that of the residual stress field.