• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1336-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.473-480
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• 1997

$\beta-SiC$powder with or without the addition of 1-3 wt% of $\beta-SiC$ whiskers (seeds) was hot-pressed at $1850^{\circ}C$ for 1 h using $Al_2O_3$ and $Y_2O_3$ as sintering aids. The hot-pressed materials were subsequently annealed at $1950^{\circ}C$ to enhance grain growth. The introduction of $\beta-SiC$ whiskers into $\beta-SiC$ does not affect the microstructure as well as mechanical properties significantly because the whiskers are not viable in the presence of liquid phase during hot-pressing. The strengths and fracture toughnesses of the hot-pressed and subsequently 5 h-annealed materials with 1 wt% $\beta-SiC$ whiskers and without $\beta-SiC$ whiskers were 465 MPa and 5.8 MPaㆍ$m^{1/2}$, and 451 MPa and 5.5 MPaㆍ$m^{1/2}$, respectively.

• Journal of the Korean Ceramic Society
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• v.45 no.2
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• pp.132-137
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• 2008

The main purpose of this study is enhancing the filtering efficiency, performance and durability of filter by growing SiC whiskers on cordierite honeycomb substrate. The experiment was performed by Chemical Vapor Infiltration (CVI) in order to control pore morphology of substrate. Increasing the mechanical strength of porous substrate is one of important issues. The formation of "networking structure" in the pore of porous substrate increased mechanical strength. The high pressure gas injection to the specimen showed that a little of whiskers were separated from substrate but additional film coating enhanced the stability of whisker at high pressure gas injection. Particle trap test was performed. More nano-particle was trapped by whisker growth at the pore of substrate. Therefore it is expected that the porous cordierite which deposited the SiC whisker will be the promising material for the application as filter trapping the nano-particles.