• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.360-367
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• 2011

Macroporous silicon carbide (SiC) ceramics were fabricated by powder processing and polymer processing using carbon-filled polysiloxane as a precursor. The effects of the starting SiC polytype, template type, and template content on porosity and flexural strength of macroporous SiC ceramics were investigated. The ${\beta}$-SiC powder as a starting material or a filler led to higher porosity than ${\alpha}$-SiC powder, owing to the impingement of growing ${\alpha}$-SiC grains, which were transformed from ${\beta}$-SiC during sintering. Typical flexural strength of powder-processed macroporous SiC ceramics fabricated from ${\alpha}$-SiC starting powder and polymer microbeads was 127 MPa at 29% porosity. In contrast, that of polymer-processed macroporous SiC ceramics fabricated from carbon-filled polysiloxane, ${\beta}$-SiC fillers, and hollow microspheres was 116MPa at 29% porosity. The combination of ${\alpha}$-SiC starting powder and a fairly large amount (10 wt%) of $Al_2O_3-Y_2O_3$ additives led to macroporous SiC ceramics with excellent flexural strength.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.523-527
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• 2012

Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful mechanical properties, such as its thermal resistance, abrasion resistance and thermal conductivity at high temperatures. In this study, RF thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) was utilized for the synthesis of high-purity SiC powder from an organic precursor (hexamethyldisilazane, vinyltrimethoxysilane). It was found that the SiC powders obtained by the RF thermal plasma treatment included free carbon and amorphous silica ($SiO_2$). The SiC powders were further purified by a thermal treatment and a HF treatment, resulting in high-purity SiC nano-powder. The particle diameter of the synthesized SiC powder was less than 30 nm. Detailed properties of the microstructure, phase composition, and free carbon content were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), a thermogravimetric (TG) analysis, according to the and Brunauer-Emmett-Teller (BET) specific surface area from N2 isotherms at 77 K.

• Journal of Korea Foundry Society
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• v.25 no.3
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• pp.123-127
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• 2005

0.8wt.% C과 $0.75{\sim}3.2$(0.75, 1, 1.26, 1.44, 1.89, 2.1, 2.46, 2.94, 3.22)wt.% Si을 함유한 고탄소 고실리콘 강에서 Si의 함량이 미세조직과 processing window에 미치는 영향에 대해 조사하였다. 열처리는 $940^{\circ}C$에서 1시간 동안 오스테나이징을 실시한 후, $320^{\circ}C$에서 $0.2{\sim}300$분 동안 오스템퍼링을 하였다. 미세조직에서, 0.75 wt.% Si을 함유한 강에서 국부적으로 오스페라이트(ausferrite)가 존재하는 것을 확인하였다. Processing window는 경도 및 XRD 측정으로 결정하였다. $t_{1}$은 Si의 함량이 2.5 wt.% 이하에서는 거의 변화가 없다가,2.5 wt.% 이상에서는 감소하는 결과를 보였다. 반면, $t_{2}$는 Si의 함량이 증가함에 따라 연속적으로 증가하였다. 즉, 0.8 wt.% C을 함유한 강에서 processing window는 Si의 함량이 약 2.5 wt.%일 때 열렸다.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1249-1256
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• 1998

${\beta}$-Silicon carbide(${\beta}$-SiC) whiskers could be synthesized by the carbothermal reduction of kaolin at tem-peratures between 1400 and 1500$^{\circ}C$. The whiskers were grown up to about 1150 of aspect ratio by VS mechanism (showing tapering tips) and to about 45 of that by VLS mechanism (showing round droplet tips) respectively. Hydrocarbon like methane in the reaction atmosphere promoted the formation of gaseous il-icon monoxide(SiO) from silicon dioxide(SiO2) and subsequently reacted with it to form whiskers. The for-mation of ${\beta}$-SiC whiskers increased with increasing carbon content(to 30 wt%) and reaction temperatures. The max. yield of ${\beta}$-SiC whiskers was 15% at 1500$^{\circ}C$ under 20%CH4/80%H2.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.4
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• pp.160-164
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• 2007

Carbon nanofibers were deposited on silicon oxide substrate by thermal chemical vapor deposition method. For the enhancement of the characteristics of carbon nanofibers, the source gases ($C_2H_2,\;H_2$) flows were intentionally manipulated as the cyclic on/off modulation of $C_2H_2$ flow. By the cyclic modulation process during the initial deposition stage, the formation density of carbon nanofibers on the substrate could be much more enhanced. The diameter of as-grown carbon nanofibers was also reduced by the cyclic modulation process. The cause for the variation in the characteristics of carbon nanofibers by the cyclic modulation process was discussed in association with the hydrogen gas etching ability.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.415-419
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• 2003

Carbon nanotubes were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition method. The possibility of carbon nanotubes formation was related to the thickness of nickel catalyst. The growth behavior of carbon nanotubes under the identical thickness of nickel catalyst was strongly dependent on the magnitude of the applied bias voltage. High negative bias voltage (-400 V) gave the vertically well-aligned carbon nanotubes. The vertically well-aligned carbon nanotubes have the multi-walled structure with nickel catalyst at the end position of the nanotubes.

• Carbon letters
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• v.2 no.1
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• pp.27-36
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• 2001

The pack-cementation process is the method which is formed SiC coating layer to improve weak oxidation properties of CFRCs (carbon fiber-reinforced carbons). This method develops the anti-oxidation coating layer having no dimensional changes and good wetting properties. In this study to improve the oxidative resistance of the prepared 4D CFRCs, the surface of CFRCs is coated by SiC using pack cementation method. The mechanical properties of SiC-coated 4D CFRCs are measured by the 3-point bending test, and their ablation properties are investigated by the arc torch plasma test. From the results, it is found that both mechanical and ablation properties of SiC-coated 4D CFRCs are much better than bare CFRCs.

• Korean Journal of Materials Research
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• v.22 no.1
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• pp.8-15
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• 2012

Silicon-based thin film was prepared at room temperature by an electrochemical deposition method and a feasibility study was conducted for its use as an anode material in a rechargeable lithium battery. The growth of the electrodeposits was mainly concentrated on the surface defects of the Cu substrate while that growth was trivial on the defect-free surface region. Intentional formation of random defects on the substrate by chemical etching led to uniform formation of deposits throughout the surface. The morphology of the electrodeposits reflected first the roughened surface of the substrate, but it became flattened as the deposition time increased, due primarily to the concentration of reduction current on the convex region of the deposits. The electrodeposits proved to be amorphous and to contain chlorine and carbon, together with silicon, indicating that the electrolyte is captured in the deposits during the fabrication process. The silicon in the deposits readily reacted with lithium, but thick deposits resulted in significant reaction overvoltage. The charge efficiency of oxidation (lithiation) to reduction (delithiation) was higher in the relatively thick deposit. This abnormal behavior needs to clarified in view of the thickness dependence of the internal residual stress and the relaxation tendency of the reaction-induced stress due to the porous structure of the deposits and the deposit components other than silicon.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3279-3281
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• 1999

This paper describes a method of direct wafer bonding using surfaces activated by a radio-frequency hydrogen plasma. The hydrogen plasma cleaning of silicon in the RIE mode was investigated as a pretreatment for silicon direct bonding. The cleaned silicon surface was successfully terminated by hydrogen, The hydrogen-terminated surfaces were rendered hydrophilic, which could be wetted by Dl water rinse. Two wafers of silicon and silicon dioxide were contacted to each other at room temperature and postannealed at $300{\sim}1100^{\circ}C$ in an $N_2$ atmosphere for 2 h. From the AFM results, it was revealed that the surface became rougher with the increased plasma exposure time and power. The effect of the plasma treatment on the surface chemistry was investigated by the AES analysis. It was shown that the carbon contamination at the surface could be reduced below 5 at %. The interfacial energy measured by the crack propagation method was 122 $mJ/m^2$ and 384 $mJ/m^2$ for RCA cleaning and hydrogen plasm, respectively.

• Journal of the Korean Ceramic Society
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• v.29 no.9
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• pp.750-756
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• 1992

Reaction bonded si-SiC composites were prepared by silicon infiltration technique at temperature of 1$600^{\circ}C$ for 30 minutes in vaccum atmosphere. The microstructure and mechanical properties of Si-SiC composites were investigated and characterized. UF-15 and SE-10 as SiC powders, phenolic resin and carbon black as carbon source, and metallic silicon powder as molten Si source were used as starting materials. New SiC crystallines nucleatd and grown by reaction of Si and C were detected by TEM and SEM-EDS. The bonding between new and original SiC was found to be strong. But the wetting of SiC by unreacted metallic Si and the rapid grain growth of new SiC decreased density and fracture toughness. Fracture toughness and modulus of rupture of Si-SiC composite were about 3.2 MPa.m1/2 and 480 MPa, respectively.