• Journal of the Korean Electrochemical Society
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• v.14 no.1
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• pp.22-26
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• 2011

Polypyrrole (Ppy) nanowire has been electrochemically synthesized via vertically oriented mesoporous silica template. The mesoporous template is also electrochemically deposited on indium tin oxide coated (ITO) glass from tetraethyl orthosilicate (TEOS) and cetyltrimethylammonium bromide (CTAB) surfactant. The highly ordered silica template is demonstrated to be 100~120nm thick with the pores of 4~5 nm diameter by scanning electron microscope (SEM) and transmission electron microscope (TEM). Ppy is formed to fill pores of the silica template from pyrrole solution by electrochemical oxidation. The Ppy in Ppy/silica/ITO composite was found to exhibit reversible electrochemical activity, as characterized by cyclic voltammetry (CV).

• Journal of the Korean Ceramic Society
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• v.45 no.3
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• pp.142-145
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• 2008

The growth of amorphous silica nanowires by on-site feeding of silicon and oxygen is reported. The nanowires were grown on a nickel-coated oxidized silicon substrate without external silicon or oxygen sources. Transmission electron microscopy observation revealed that the nanowires, which have diameters of less than 50 nm and a length of several micrometers, were grown using a traditional vapor-liquid-solid mechanism. Blue photoluminescence was observed from these nanowires at room temperature. An approach to grow nanowires without external precursors may be useful when integrating nanowires into devices structures. This can benefit the fabrication of nanowire-based nanodevices.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.115-115
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• 2003

Silica nanostructures have been attached considerable attention because of theirs potential application in mesoscopic research and the potential use of large surface area structure of catalysts. SiO2 nannowire and nanorods was synthesized various methods including thermal evaporation, chemical vapor deposition (CVD), and laser ablation methods. In this experiments, SiO2 nanowire were grown using thermal evaporation method followed by VS (Vapor-Solid) growth mechanisms. Grown SiO2 nanowires were amorphous phases because of its low growth temperatures. Grown nanowires diameters were about 20-40nm at all growth conditions, but its microstructres were different by that used substrate because of it's oxygen contents.

• Journal of the Korean Ceramic Society
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• v.55 no.3
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• pp.285-289
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• 2018

We synthesized silicon carbide (${\beta}-SiC$) nanowires with nano-scale diameter (30 - 400 nm) and micro-scale length ($50-200{\mu}m$) on a porous body using low-grade silica and carbon black powder by carbothermal reduction at $1300-1600^{\circ}C$. The SiC nanowires were formed by vapor-liquid-solid deposition with self-evaporated Fe catalysts in low-grade silica. We investigated the characteristics of the SiC nanowires, which were grown on a porous body with Ar flowing in a vacuum furnace. Their structural, optical, and electrical properties were analyzed with X-ray diffraction (XRD), transmission electron microscopy (TEM), and selective area electron diffraction (SAED). We obtained high-quality SiC single crystalline nanowire without stacking faults that may have uses in industrial applications.

• Journal of the Korean Chemical Society
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• v.52 no.4
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• pp.387-393
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• 2008

• New Physics: Sae Mulli
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• v.68 no.11
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• pp.1203-1207
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• 2018

In this study, silica nanowires were formed using silicon oxide films with different oxygen contents, and their microstructure and physical properties were compared with those of silica nanowires formed using Si wafers. The silicon oxide films were fabricated by using a plasma-enhanced chemical vapor deposition method. Silica nanowires were formed by thermally annealing silicon oxide films coated with nickel films as a catalyst. In the case of silicon oxide films having an oxygen content of approximately 50 at.% or less, the formation mechanism, microstructure, and physical properties of the nanowires were not substantially different from those of the silicon wafer. In particular, the uniformity of the thickness showed better behavior in the silicon oxide films. These results imply that silicon oxide films can be used as an alternative for fabricating high-quality silica nanowires at low cost.