• 제목/요약/키워드: Signal Emitter

검색결과 48건 처리시간 0.026초

Meta learning-based open-set identification system for specific emitter identification in non-cooperative scenarios

  • Xie, Cunxiang;Zhang, Limin;Zhong, Zhaogen
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제16권5호
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    • pp.1755-1777
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    • 2022
  • The development of wireless communication technology has led to the underutilization of radio spectra. To address this limitation, an intelligent cognitive radio network was developed. Specific emitter identification (SEI) is a key technology in this network. However, in realistic non-cooperative scenarios, the system may detect signal classes beyond those in the training database, and only a few labeled signal samples are available for network training, both of which deteriorate identification performance. To overcome these challenges, a meta-learning-based open-set identification system is proposed for SEI. First, the received signals were pre-processed using bi-spectral analysis and a Radon transform to obtain signal representation vectors, which were then fed into an open-set SEI network. This network consisted of a deep feature extractor and an intrinsic feature memorizer that can detect signals of unknown classes and classify signals of different known classes. The training loss functions and the procedures of the open-set SEI network were then designed for parameter optimization. Considering the few-shot problems of open-set SEI, meta-training loss functions and meta-training procedures that require only a few labeled signal samples were further developed for open-set SEI network training. The experimental results demonstrate that this approach outperforms other state-of-the-art SEI methods in open-set scenarios. In addition, excellent open-set SEI performance was achieved using at least 50 training signal samples, and effective operation in low signal-to-noise ratio (SNR) environments was demonstrated.

바이폴라 트랜지스터 소신호 변수의 결정 및 특성에 관한 연구 (Characterization and Determination of Small Signal Parameters of Bipolar Transistors)

  • 배동건;정상구;최연익;조영철
    • 대한전자공학회논문지
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    • 제27권1호
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    • pp.51-58
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    • 1990
  • NPN Si bipolar transistors with two different emitter widths are designed and fabricated. The effects of the emitter width on the small signal parameters of BJTs are measured and discussed. A new ac method for determining the current gain, the cut off frequency and the internal capacitances from the input impedance circle characteristics as a function of the varied external series resistances is presented. This method allows an accurate characterization of bipolar transistors with high current gain. The variation of the I-V curves of the emitter junction with the reverse collector junction voltages is discussed from the changes in the intsrinsic base resistances.

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Investigation of the Sensitivity Depletion Laws for Rhodium Self-Powered Neutrorn Detectors (SPNDs)

  • Kim, Gil-Gon;Cho, Nam-Zin
    • Nuclear Engineering and Technology
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    • 제33권2호
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    • pp.121-131
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    • 2001
  • An investigation of the sensitivity depletion laws for rhodium SPNDs was performed to reduce the uncertainty of the sensitivity depletion laws used in Combustion Engineering (CE) reactors and to develop calculational tools that provide the sensitivity depletion laws to interpret the signal of the newly designed rhodium SPND into the local neutron flux. The calculational tools developed in this work are computer programs for a time-dependent neutron flux distribution in the rhodium emitter during depletion and for a time-dependent beta escape probability that a beta particle generated in the emitter escapes into the collector. These programs provide the sensitivity depletion laws and show the reduction of the uncertainty by about 1 % compared to that of the method employed by CE in interpreting the signal into the local neutron flux. A reduction in the uncertainty by 1 % in interpreting the signal into the local neutron flux reduces the uncertainty tv about 1 % in interpreting the signal into the local power and lengthens the lifetime of the rhodium SPND by about 10% or more.

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Recognition of Radar Emitter Signals Based on SVD and AF Main Ridge Slice

  • Guo, Qiang;Nan, Pulong;Zhang, Xiaoyu;Zhao, Yuning;Wan, Jian
    • Journal of Communications and Networks
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    • 제17권5호
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    • pp.491-498
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    • 2015
  • Recognition of radar emitter signals is one of core elements in radar reconnaissance systems. A novel method based on singular value decomposition (SVD) and the main ridge slice of ambiguity function (AF) is presented for attaining a higher correct recognition rate of radar emitter signals in case of low signal-to-noise ratio. This method calculates the AF of the sorted signal and ascertains the main ridge slice envelope. To improve the recognition performance, SVD is employed to eliminate the influence of noise on the main ridge slice envelope. The rotation angle and symmetric Holder coefficients of the main ridge slice envelope are extracted as the elements of the feature vector. And kernel fuzzy c-means clustering is adopted to analyze the feature vector and classify different types of radar signals. Simulation results indicate that the feature vector extracted by the proposed method has satisfactory aggregation within class, separability between classes, and stability. Compared to existing methods, the proposed feature recognition method can achieve a higher correct recognition rate.

AlgaAs/GaAs SABM HBT의 제작 및 특성 (Fabrication and characteristics of AlGaAs/GaAs SABM HBTs)

  • 이준우;김영식;서아람;서영석;신진호;김범만
    • 전자공학회논문지A
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    • 제32A권1호
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    • pp.129-137
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    • 1995
  • AlGaAs/GaAs HBTs have been fabricated using SABM (Self-Aligned Base Metal) process technique. The mesa type HBTs were fabricated through following steps: isolation implant, wet etching, metal lift-off, and airbridge interconnection process. The fabricated HBTs with 2umx10um size emitter showed a common emitter current gain of 10 at a collector current density of Jk=100kA/cm$^{2}$, a breakdown volgate BVCEO of 8V, and the ideality factors of base and collector junctions of 1.6 and 1.1, respectively. On-wafer S-Parameter measurement at 0.5~18GHz has been made for the characterization of the common emitter HBTx with a 2umx10um size emitter. The extrapolated current gain cut-off frequency of ft=30GHz and maximum oscillation frequency of fmax=23 GHz were obtained at a collector current density of Jc=70kA/cm$^{2}$. Small signal HBT equivalent circuit was extracted from the S-Parameter data.

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A Novel Localization Algorithm using Received Signal Strength Difference

  • Lim, Deok Won;Seo, Jae-Hee;Chun, Sebum;Heo, Moon Beom
    • Journal of Positioning, Navigation, and Timing
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    • 제6권4호
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    • pp.141-147
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    • 2017
  • In this paper, an efficient and robust localization algorithm using Receiver Signal Strength Difference (RSSD) for a non-cooperative RF emitter is given. The proposed algorithm firstly calculate the center point and radius of Apollonius's circles and then estimate the intersection point of the circles based on Time of Arrival concept. And this paper also compares the performance of RSSD localization algorithms such as Non-linear Least Squares and Linearized Least Squares by Lines of Position (LOP) with the proposed algorithm. And some conclusions have been reached regarding the relative accuracy, robustness and computational cost of these algorithms.

펩타이드 질량 분석을 위한 전기 이온화 분사기의 제작 및 성능 평가 (Mass spectrometry analysis system with integrated micro electrospray ionization emitter for peptide detection)

  • 김민수;주황수;김병기;김용권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.1534-1535
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    • 2007
  • This paper describes a novel microfluidic device with a microfabricated electrospray source for a sheathless electrospray ionization interface to a mass spectrometer. This electrospray ionization-mass spectrometry (ESI-MS) device consists of a triangular-shaped metal emitter, allowing the generation of an efficient electrospray for peptide detection, and microfluidic channels monolithically in a glass microchip. The performance of the proposed interface was evaluated by opimizing its experimental condition and spraying standard peptides. The spraying has high signal strength and stability, with a relative standard deviation of 2.9% and singly-charged and doubly-charged peaks of the peptides were successfully detected. The metal emitter source showed a good performance to be comparable to commercially available emitters in signal strength and stability.

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Considerations for Design and Implementation of a RF Emitter Localization System with Array Antennas

  • Lim, Deok Won;Lim, Soon;Chun, Sebum;Heo, Moon Beom
    • Journal of Positioning, Navigation, and Timing
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    • 제5권1호
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    • pp.37-45
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    • 2016
  • In this paper, design and implementation issues for a network-oriented RF emitter localization system with array antenna are discussed. For hardware, the problem of array mismatch and RF/IF channel mismatch are introduced and the calibration schemes for solving those problems are also provided. For software, it is explained how to overcome the drawback of conventional MUltiple Signal Identification and Classification (MUSIC) algorithm in a point of identifying the number of received signals and problems such as Data Association Problem and Ghost Node Problem in regard to multiple emitter localization are presented with some approaches for getting around those problems. Finally, for implementation, a criterion for arranging each of sensors and a requirement for alignment of array antenna' orientation are also given.

전기 분무 이온화를 이용한 단백질 질량분석용 마이크로 유체 소자의 제작 및 실험 (Sheathless electrospray ionization with integrated metal emitter on microfluidic device)

  • 김민수;주황수;이국녕;김병기;김용권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 하계학술대회 논문집 C
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    • pp.2102-2104
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    • 2004
  • In this study, sheathless electrospray from PDMS/glass microchips with conducting metal emitter tip is described. A chip-based capillary electrophoresis/mass spectrometry (CE/MS) system has advantages of the CE separation and on-line electrospray detection of peptide solution. We have fabricated a new electrospray ionization(ESI) device composed of the metal emitter tip and CE separation channel monolithically in a glass microchip. The separation channel and metal emitter tip are fabricated using a glass wet etching and gold electro plating process, respectively. The fabricated micro electrospray chip was tested by spraying peptide sample for mass spectrometric analysis. Singlely-charged peak and doublely-charged peak of peptide were detected and further MS/MS fragmentation was performed in each peak. Direct comparisons with conventional glass or fused silica emitters showed very similar performance with respect to signal strength and stability.

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Research of an On-Line Measurement Method for High-power IGBT Collector Current

  • Hu, Liangdeng;Sun, Chi;Zhao, Zhihua
    • Journal of Power Electronics
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    • 제16권1호
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    • pp.362-373
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    • 2016
  • The on-line measurement of high-power IGBT collector current is important for the hierarchical control and short-circuit and overcurrent protection of its driver and the sensorless control of the converter. The conventional on-line measurement methods for IGBT collector current are not suitable for engineering measurement due to their large-size, high-cost, low-efficiency sensors, current transformers or dividers, etc. Based on the gate driver, this paper has proposed a current measuring circuit for IGBT collector current. The circuit is used to conduct non-intervention on-line measurement of IGBT collector current by detecting the voltage drop of the IGBT power emitter and the auxiliary emitter terminals. A theoretical analysis verifies the feasibility of this circuit. The circuit adopts an operational amplifier for impedance isolation to prevent the measuring circuit from affecting the dynamic performance of the IGBT. Due to using the scheme for integration first and amplification afterwards, the difficult problem of achieving high accuracy in the transient-state and on-state measurement of the voltage between the terminals of IGBT power emitter and the auxiliary emitter (uEe) has been solved. This is impossible for a conventional detector. On this basis, the adoption of a two-stage operational amplifier can better meet the requirements of high bandwidth measurement under the conditions of a small signal with a large gain. Finally, various experiments have been carried out under the conditions of several typical loads (resistance-inductance load, resistance load and inductance load), different IGBT junction temperatures, soft short-circuits and hard short-circuits for the on-line measurement of IGBT collector current. This is aided by the capacitor voltage which is the integration result of the voltage uEe. The results show that the proposed method of measuring IGBT collector current is feasible and effective.