• Title/Summary/Keyword: SiPM

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Effect of Si/Si3N4 Ratio on the Microstructure and Properties of Porous Silicon Nitrilde Prepared by SHS Methode (규소/질화규소 비가 자전연소합성공정을 이용한 다공질 질화규소 세라믹스의 미세구조와 특성에 미치는 영향)

  • Kim, Dong-Baek;Park, Dong-Soo;Hahn, Byung-Dong;Jung, Yeon-Gil
    • Journal of the Korean Ceramic Society
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    • v.44 no.6 s.301
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    • pp.338-342
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    • 2007
  • Porous silicon nitride ceramics were prepared by SHS (Self-Propagating High Temperature Synthesis) from silicon powder, silicon nitride powder and pore-forming precursor. The microstructure, porosity and the flexural strength of the porous silicon nitride ceramics were varied according to the Si/Si3N4 ratio, size and amount of the pore-forming precursors. Some sample exhibited as high flexural strength as $162{\pm}24\;MPa$. The high strength is considered to result from the fine pore size and the strong bonding amoung the silicon nitride particles.

Studies for Improvement in SiO2 Film Property for Thin Film Transistor (박막트랜지스터 응용을 위한 SiO2 박막 특성 연구)

  • Seo, Chang-Ki;Shim, Myung-Suk;Yi, Junsin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.6
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    • pp.580-585
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    • 2004
  • Silicon dioxide (SiO$_2$) is widely used as a gate dielectric material for thin film transistors (TFT) and semiconductor devices. In this paper, SiO$_2$ films were grown by APCVD(Atmospheric Pressure chemical vapor deposition) at the high temperature. Experimental investigations were carried out as a function of $O_2$ gas flow ratios from 0 to 200 1pm. This article presents the SiO$_2$ gate dielectric studies in terms of deposition rate, refrative index, FT-IR, C-V for the gate dielectric layer of thin film transistor applications. We also study defect passivation technique for improvement interface or surface properties in thin films. Our passivation technique is Forming Gas Annealing treatment. FGA acts passivation of interface and surface impurity or defects in SiO$_2$ film. We used RTP system for FGA and gained results that reduced surface fixed charge and trap density of midgap value.

DESIGN OF A NEUTRON SCREEN FOR 6-INCH NEUTRON TRANSMUTATION DOPING IN HANARO

  • Kim, Hak-Sung;Oh, Soo-Youl;Jun, Byung-Jin;Kim, Myong-Seop;Seo, Chul-Gyo;Kim, Heon-Il
    • Nuclear Engineering and Technology
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    • v.38 no.7
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    • pp.675-680
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    • 2006
  • The neutron transmutation doping of silicon (NTD), as a method to produce a high quality semiconductor, utilizes the transmutation of a silicon element into phosphorus by neutron absorption in a silicon single crystal. In this paper, we present the design of a neutron screen for a 6' Si ingot irradiation in the NTD2 hole of HANARO. The goal of the design is to achieve an even flat axial distribution of the resistivity, or $Si^{30}(n,{\gamma})Si^{31}$ reaction rate, in the irradiated Si ingot. We used the MCNP4C code to simulate the neutron screen and to calculate the reaction rate distribution in the Si ingot. The fluctuations in the axial distribution were estimated to be within ${\pm}2.0%$ from the average for the final neutron screen design; thus, they satisfy the customers' requirement for uniform irradiation. On the other hand, we determined the optimal insertion depths of the Si ingots by varying the critical control rod position, which greatly affects the axial flux distribution.

Research of RFP Appropriateness for the Success of Public SI Projects (공공 SI 프로젝트의 성공적인 수행을 위한 RFP 적합성에 관한 연구)

  • Jung, JaeBong;Lee, SeoukJoo;Kang, JaeWoo
    • Proceedings of the Korea Information Processing Society Conference
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    • 2010.04a
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    • pp.973-976
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    • 2010
  • 제안요청서(RFP)는 사업목적 달성을 위해 발주자가 공급자의 제안을 받기 위한 요구사항을 정의한 문서로 프로젝트 목표 수행의 중요한 요소이고, 불명확한 요구사항과 요구의 변경, 외부 수행 작업의 문제, 일정과 예산의 비현실성 등은 프로젝트의 성공적인 수행을 저해하는 위험요인이다. 본 논문에서는 2005년부터 2009년까지 공공 SI(System Integration) 프로젝트의 RFP를 대상으로 첫째, 미국 프로젝트 표준규격인 PMBOK(Project Management Body of Knowleage) 지식 및 관리 프로세스 영역을 적용하여 현황을 분석하였고 둘째, Core와 Support 프로세스 영역을 비교분석하고, 셋째, Core 프로세스의 범위, 일정, 비용 영역에 대해 분석하였다. 연구결과로 공공 SI RFP의 범위, 일정, 비용을 의미한 항목에서 분명한 차이를 보여 보완이 요구되었다. 향후 본 연구를 통해 공공 SI 프로젝트의 RFP 작성시 명확성을 제고하여 프로젝트 성공 수행에 도움이 되도록 하고자 한다.

Improvement of Solar Conversion Efficiency in a c-Si PV Sub-Module Integrated with SiOx Anti-Reflection Grating for Oblique Optical Irradiation (측면입사광에 대한 SiOx 무반사 회절격자 결합 c-Si PV 서브-모듈의 광전변환효율 향상)

  • Shim, Ji-Hyun;Kim, Jeha
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.5
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    • pp.325-330
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    • 2017
  • We fabricated 1-D and 2-D diffraction gratings of SiOx anti-reflection (AR) film grown on a quartz substrate and integrated them into a c-Si photovoltaic (PV) submodule. The light-trapping effect of the resulting submodules was studied in terms of the oblique optical incident angle, ${\theta}_i$. As the ${\theta}_i$ increased, solar conversion efficiency, ${\eta}$, was improved as expected by the increased optical transmission caused by the grating. For ${\theta}_i{\leq}30^{\circ}$, the relative solar conversion efficiency, ${\Delta}{\eta}$, of a 1-D SiOx (t=300 nm) grating, compared to that of a flat SiOx AR-coated integrated PV submodule, was improved very little, with a small variation of within 2%, but increased markedly for ${\theta}_i{\geq}40^{\circ}$. We observed a change of ${\Delta}{\eta}$ as large as 10.7% and 9.5% for the SiOx grating of period t=800 nm and 1200 nm, respectively. For a 2-D SiOx (t=300 nm) grating integrated PV submodule, however, the optical trapping behavior was similar in terms of ${\theta}_i$ but its variation was small, within ${\pm}1.0%$.

Occurrence and Geochemical Characteristics of the Haenam Pb-Zn Skarn Deposit (해남 연-아연 스카른광상의 산상과 지화학적 특성)

  • Im, Heonkyung;Shin, Dongbok;Heo, Seonhee
    • Economic and Environmental Geology
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    • v.47 no.4
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    • pp.363-379
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    • 2014
  • The Haenam Pb-Zn skarn deposit is located at the Hwawon peninsula in the southwestern part of the Ogcheon Metamorphic Belt. The deposit is developed along the contact between limestone of the Ogcheon group and Cretaceous quartz porphyry. Petrography of ore samples, chemical composition of skarn and ore minerals, and geochemistry of the related igneous rocks were investigated to understand the characteristics of the skarn mineralization. Skarn zonation consists of garnet${\pm}$pyroxene${\pm}$calcite${\pm}$quartz zone, pyroxene+garnet+quartz${\pm}$calcite zone, calcite+pyroxene${\pm}$garnet zone, quartz+calcite${\pm}$pyroxene zone, and calcite${\pm}$chlorite zone in succession toward carbonate rock. Garnet commonly shows zonal texture comprised of andradite and grossular. Pyroxene varies from Mn-hedenbergite to diopside as away from the intrusive rock. Chalcopyrite occurs as major ore mineral near the intrusive rock, and sphalerite and galena tend to increase as going away. Electron probe microanalyses revealed that FeS contents of sphalerite become decreased from 5.17 mole % for garnet${\pm}$pyroxene${\pm}$calcite${\pm}$quartz zone to 2.93 mole %, and to 0.40 mole % for calcite+pyroxene${\pm}$garnet zone, gradually. Ag and Bi contents also decreased from 0.72 wt.% and 1.62 wt.% to <0.01 wt.% and 0.11 wt.%, respectively. Thus, the Haenam deposit shows systematic variation of species and chemical compositions of ore minerals with skarn zoned texture. The related intrusive rock, quartz porphyry, expresses more differentiated characteristics than Zn-skarn deposit of Meinert(1995), and has relatively high$SiO_2$ concentration of 72.76~75.38 wt.% and shows geochemical features classified as calc-alkaline, peraluminous igneous rock and volcanic arc tectonic setting.

Thermally Stimulated Exoelectron Emission from LiF(Mg,Cu,Na,Si) Phosphor (LiF(Mg,Cu,Na,Si)형광체의 열자극엑소전자방출)

  • Doh, Sih-Hong;Jeong, Jung-Hyun;Aoki, M.;Nishikawa, T.;Tamagawa, Y.;Isobe, M.
    • Journal of Sensor Science and Technology
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    • v.3 no.2
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    • pp.11-15
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    • 1994
  • The TSEE characteristics of LiF(Mg,Cu,Na,Si)phosphor for gamma and beta rays are described. The TSEE glow curve of this phosphor showed 5 peaks in the range from $20^{\circ}C$ to $400^{\circ}C$ and its main peak appeared at $240^{\circ}C$. The sensitivity of the phospor for $^{60}Co$ gamma rays was about 450counts/mR. TSEE energy dependence for various beta radiation was nearly constant (${\pm}10%$) in the mean beta particle energy range from 0.02MeV to 0.8MeV. The efficiency of TSEE of the phosphor for beta radiation was $(2{\sim}15){\times}10^{-3}$.

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Does Intramedullary Signal Intensity on MRI Affect the Surgical Outcomes of Patients with Ossification of Posterior Longitudinal Ligament?

  • Choi, Jae Hyuk;Shin, Jun Jae;Kim, Tae Hong;Shin, Hyung Shik;Hwang, Yong Soon;Park, Sang Keun
    • Journal of Korean Neurosurgical Society
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    • v.56 no.2
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    • pp.121-129
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    • 2014
  • Objectives : Patients with cervical ossification of posterior longitudinal ligament (OPLL) are susceptible to cord injury, which often develops into myelopathic symptoms. However, little is known regarding the prognostic factors that are involved in minor trauma. We evaluated the relationship between minor trauma and neurological outcome of OPLL and investigated the prognostic factors with a focus on compressive factors and intramedullary signal intensity (SI). Methods : A total of 74 patients with cervical myelopathy caused by OPLL at more than three-levels were treated with posterior decompression surgeries. We surveyed the space available for spinal cord (SAC), the severity of SI change on T2-weighted image, and diabetes mellitus (DM). The neurological outcome using Japanese Orthopedic Association (JOA) scale was assessed at admission and at 12-month follow-up. Results : Among the variables tested, preoperative JOA score, severity of intramedullary SI, SAC, and DM were significantly related to neurological outcome. The mean preoperative JOA were $11.3{\pm}1.9$ for the 41 patients who did not have histories of trauma and $8.0{\pm}3.1$ for the 33 patients who had suffered minor traumas (p<0.05). However, there were no significant differences in the recovery ratios between those two groups. Conclusions : Initial neurological status and high intramedullary SI in the preoperative phase were related to poorer postoperative outcomes. Moreover, the patients with no histories of DM and larger SACs exhibited better improvement than did the patients with DM and smaller SACs. Although the initial JOA scores were worse for the minor trauma patients than did those who had no trauma prior to surgery, minor trauma exerted no direct effects on the surgical outcomes.

Effects of Intraarticular Prolotherapy on Sacroiliac Joint Pain (천장관절 증후군 환자에서 관절강 내 증식치료의 효과)

  • Lee, Jae Dam;Lee, Dae Wook;Jeong, Cheol Won;Lee, Hyung Gon;Yoon, Myung Ha;Kim, Woong Mo
    • The Korean Journal of Pain
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    • v.22 no.3
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    • pp.229-233
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    • 2009
  • Background: Sacroiliac (SI) joint pain is a challenging condition that causes lower back or buttock pain; however, there is no universally accepted long-term treatment. There have been several reports of ligament prolotherapy for SI joint pain, but these have had inconsistent results, probably due to the lack of a specific diagnosis for patient selection and variability in the volume, number and sites of injection. Therefore, this study was conducted to assess the efficacy of intraarticular prolotherapy for relieving SI joint pain diagnosed by local anesthetic intraarticular injection. Methods: Twenty-two patients with SI joint pain confirmed by 50% or more improvement in response to local anesthetic block underwent intraarticular prolotherapy with 25% dextrose water every other week three times. The numeric rating scale (NRS) for pain and Oswestry disability index (ODI) were assessed at the initial visit and after completion of a series of prolotherapy and the NRS was checked during monthly follow-up sessions to evaluate the long-term effectiveness of this technique. Results: Twenty patients completed prolotherapy and followed up as scheduled. The NRS and ODI were significantly improved from 6 (4-8) and $34.1{\pm}15.5$ to 1 (0-3) and $12.6{\pm}9.8$ (P < 0.01), respectively, at 1 month after prolotherapy. The mean duration of pain relief of 50% or more was 12.2 months (95% CI, 10.0-14.3) as determined by Kaplan-Meier survival analysis. Conclusions: Intraarticular prolotherapy provided long-term relief of sacroiliac joint pain and may have more benefits than ligament prolotherapy or neurolysis.

A Voltage Programming AMOLED Pixel Circuit Compensating Threshold Voltage Variation of n-channel Poly-Si TFTs (n-채널 다결정 실리콘 박막 트랜지스터의 문턱전압 변동 보상을 위한 전압 기입 AMOLED 화소회로)

  • Chung, Hoon-Ju
    • The Journal of the Korea institute of electronic communication sciences
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    • v.8 no.2
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    • pp.207-212
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    • 2013
  • A novel pixel circuit that uses only n-type low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS-TFTs) to compensate the threshold voltage variation of a OLED driving TFT is proposed. The proposed 6T1C pixel circuit consists of 5 switching TFTs, 1 OLED driving TFT and 1 capacitor. When the threshold voltage of driving TFT varies by ${\pm}0.33$ V, Smartspice simulation results show that the maximum error rate of OLED current is 7.05 % and the error rate of anode voltage of OLED is 0.07 % at Vdata = 5.75 V. Thus, the proposed 6T1C pixel circuit can realize uniform output current with high immunity to the threshold voltage variation of poly-Si TFT.