• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.192-195
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• 2012

We reported diborane ($B_2H_6$) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) films prepared by using silane ($SiH_4$) hydrogen ($H_2$) and nitrous oxide ($N_2O$) in a radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system. We improved the $E_{opt}$ and conductivity of p-type a-SiOx:H films with various $N_2O$ and $B_2H_6$ ratios and applied those films in regards to the a-Si thin film solar cells. For the single layer p-type a-SiOx:H films, we achieved an optical band gap energy ($E_{opt}$) of 1.91 and 1.99 eV, electrical conductivity of approximately $10^{-7}$ S/cm and activation energy ($E_a$) of 0.57 to 0.52 eV with various $N_2O$ and $B_2H_6$ ratios. We applied those films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: $V_{oc}$ = 853 and 842 mV, $J_{sc}$ = 13.87 and 15.13 $mA/cm^2$. FF = 0.645 and 0.656 and ${\eta}$ = 7.54 and 8.36% with $B_2H_6$ ratios of 0.5 and 1% respectively.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.210-216
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• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si:H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si:H/c-Si. The wafers passivated by p(n)-doped a-Si:H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of $100{\mu}sec$ after H-termination and above $600{\mu}sec$ after i a-Si:H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si:H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of $37.31\;mA/cm^2$ and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-$V_{oc}$ with an elimination of series resistance.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.103-109
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• 2014

Highly efficient hydrogenated nanocrystalline silicon (nc-Si:H) thin-film solar cells were prepared on flexible stainless steel substrates using plasma-enhanced chemical vapor deposition. To enhance the performance of solar cells, material properties of back reflectors, n-doped seed layers and wide bandgap nc-SiC:H window layers were optimized. The light scattering efficiency of Ag back reflectors was improved by increasing the surface roughness of the films deposited at elevated substrate temperatures. Using the n-doped seed layers with high crystallinity, the initial crystal growth of intrinsic nc-Si:H absorber layers was improved, resulting in the elimination of the defect-dense amorphous regions at the n/i interfaces. The nc-SiC:H window layers with high bandgap over 2.2 eV were deposited under high hydrogen dilution conditions. The vertical current flow of the films was enhanced by the formation of Si nanocrystallites in the amorphous SiC:H matrix. Under optimized conditions, a high conversion efficiency of 9.13% ($V_{oc}=0.52$, $J_{sc}=25.45mA/cm^2$, FF = 0.69) was achieved for the flexible nc-Si:H thin-film solar cells.

• Korean Journal of Materials Research
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• v.17 no.1
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• pp.18-24
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• 2007

Mullite-PSZ composite was prepared by sol-gel method using $Al(sec-OC_4H_9)_3,\;Si(OC_2H_5)_4,\;ZrOCl_2\;8H_2O\;and\;Y_2O_3$. The sinterability ana mechanical properties of powder compacts sintered at $1,650^{\circ}C$ for 4 hrs were investigated for various PSZ contents. In result Al-Si spinel formed at $980^{\circ}C$ from amorphous dried gel, and zirconia as well as mullite crystal formed above $1,200^{\circ}C$. The sintered body was densified to $97{\sim}98%$ except the specimen containing 25vol% PSZ which showed the relative density of about 95% obtained by sintering at $1,650^{\circ}C$ for 4 h. The flexural strength of the sintered body was a maximum value of 290 MPa in 20 vol% PSZ, which was also considerably larger than the value of 200 MPa without PSZ. The value of the fracture toughness increased linearly with increase of PSZ content and showed a maximum value of $4.3MPam^{1/2}$ in 25 vol% PSZ, Namely this value was remarkably larger than the $value(2.6MPam^{1/2})$ of pure mullite without PSZ.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.2
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• pp.40-52
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• 1992

$PbTi0_3$ thin films were deposited at $550^{\circ}C$ by MOCVD method using titanium-iso-propoxide [$Ti(OC_3H_7)_4$] and tetra-ethyl-lead $[Pb(C_2H_5)_4]$as starting materials. In the present study, Ar and $O_2$were used as a carrier gas and a reaction gas, respectively, and the change of thickness and refractive index, Xray diffraction analysis, and CV characteristic measurements of the films were systematically investigated. As a result of CV characteristic analysis of the annealed $PbTiO_3$ thin films, it is assumed that the films interact with Si substrate at the interface, and X-ray diffraction patterns of the films show characteristic peaks for $PbTiO_3$ With increasing the annealing temperature and time, the thickness of the films tends to decrease but their refractive index increases.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.136-136
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• 2003

In fiber optic networks, system size and cost can be significantly reduced by development of optical components through planar optical waveguides. One important step to realize the compact optical devices is to develop planar optical amplifier to compensate the losses in splitter or other components. Planar amplifier provides optical gain in devices less than tens of centimeters long, as opposed to fiber amplifiers with lengths of typically tens of meters. To achieve the same amount of gain between the planar and fiber optical amplifier, much higher Er doping levels responsible for the gain than in the fiber amplifier are required due to the reduced path length. These doping must be done without the loss of homogeniety to minimize Er ion-ion interactions which reduce gain by co-operative upconversion. Sol-gel process has become a feasible method to allow the incorporation of Er ion concentrations higher than conventional glass melting methods. In this work, Er-doped $SiO_2$-A1$_2$ $O_3$ films were prepared by two different method via sol -Eel process. Tetraethylorthosilicate(TEOS)/aluminum secondary butoxide [Al (OC$_4$ $H_{9}$)$_3$], methacryloxypropylcnethoxysaane(MPTS)/aluminum secondary butofde [Al(OC$_4$ $H_{9}$)$_3$] systems were used as starting materials for hosting Er ions. Er-doped $SiO_2$-A1$_2$ $O_3$ films obtahed after heat-treating, coatings on Si substrate were characterized by X-ray din action, FT-IR, and N-IR fluorescence spectroscopy. The luminescence properties for two different processing procedure will be compared and discussed from peak intensity and life time.

• BMB Reports
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• v.44 no.11
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• pp.735-740
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• 2011

Tunicamycin, an endoplasmic reticulum (ER) stress inducer, specifically inhibits N-glycosylation. The cyclic AMP (cAMP) response element-binding protein H (CREBH) was previously shown to be regulated by UPR-dependent proteolytic cleavage in the liver. On the other hand, the role of CREBH in other tissues is unknown. In the present study, tunicamycin increased the level of CREBH activation (cleavage) as well as mRNA expression in osteoblast cells. Adenoviral (Ad) overexpression of CREBH suppressed BMP2-induced expression of alkaline phosphatase (ALP) and osteocalcin (OC). Interestingly, the BMP2-induced OASIS (structurally similar to CREBH, a positive regulator of osteoblast differentiation) expression was also inhibited by CREBH overexpression. In addition, inhibition of CREBH expression using siRNA reversed the tunicamycin-suppressed ALP and OC expression. These results suggest that CREBH inhibited osteoblast differentiation via suppressing BMP2-induced ALP, OC and OASIS expression in mouse calvarial derived osteoblasts.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.5
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• pp.183-190
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• 2022

Diopside (CaMgSi₂O₆) is known to have high bioactivity as well as excellent mechanical properties. In this study, we tried to improve the bioactivity of zirconia ceramics by surface coating of diopside and its bioactivity was investigated through an in vitro test. Surface coating on zirconia substrate was prepared by sol-gel method using a diopside sol which was prepared by dissolving Ca(NO₃)₂·4H₂O, MgCl₂·6H₂O and Si(OC₂H₅)₄ in ethanol with a fixed molar ratio and then hydrolysis. To examine the bioactivity of diopside coating, we examined the surface dissolution and the precipitation of new hydroxyapatite particles through in vitro test in SBF (Simulated Body Fluid) solution. Dense and thick diopside coating layers could be fabricated on zirconia substrate by sol-gel method. Also, we confirmed that they contained high bioactivity from the in vitro test, indicated the precipitation of hydroxyapatite particles after the 14 days immersion in SBF solution. In addition, we checked that the bioactivity of diopside coated layers was dependent on the repeated coating cycle and coating thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.89-90
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• 2008

본 연구에서는 PECVD(Plasma Enhanced CVD) 에서 사용하는 유해 가스인 $SiH_4$ 대신에 유기 사일렌 반응 물질인 TEOS(Tetraethyl Orthosilicate, Si$(OC_2H_5)_4)$를 이용하여 상압 화학 기상 증착법 (Atmospheric Pressure CVD, APCVD)으로 실리콘 산화막을 증착하고 박막의 조성과 특성 및 화학적, 전기적 특성들을 살펴보았다. TEOS 반응원료를 이용한 CVD 공정에서 공정 온도를 낮추기 위한 방법으로 강력한 산화제인 오존을 이용하여 공정온도를 $400^{\circ}C$이하로 낮췄으며, 유리기판 상의 ELA(Excimer Laser Annealing)처리된 다결정 실리콘 기판에 트랜지스터 소자를 제작하고, 게이트 절연막으로의 전기적 특성을 살펴보았다.

• Korean Journal of Materials Research
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• v.24 no.1
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• pp.48-52
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• 2014

The Mg-enriched magnesium aluminum silicate (MAS) glass is known for its higher mechanical strength and chemical resistance. Among such glasses, cordierite ($Mg_2Al_4Si_5O_{18}$) is well known to have a low thermal expansion and low melting point. Polycrystalline engineering ceramics such as alumina can be strengthened by a surface modification with low thermal expansion materials. The present study involves the synthesis of cordierite by a sol-gel process and investigates the effect of glass penetration on the surface of alumina. The cordierite powders were prepared from $Al(OC_3H_7)_3$, $Mg(OC_2H_5)_2$ and tetraethyl orthosilicate by hydrolysis and condensation reaction. The cordierite powders were characterized by X-ray diffraction (XRD, Rigaku), scanning electron microscope (SEM, JEOL: JSM-5610), energy dispersive spectroscopy (EDS, JEOL: JSM-5610), and universal testing machine (UTM, INSTRON). The X-ray diffraction patterns showed that the synthesized particles were ${\mu}$-cordierite calcined at $1100^{\circ}C$ for 1 h. The shape of synthesized cordierite was changed from ${\mu}$-cordierite to ${\alpha}$-cordierite with increasing calcination temperature. Synthesized cordierite was used for surface modification of alumina. Cordierite powders penetrated deeply into the alumina sample along grain boundaries with increasing temperature. The results of surface modification tests showed that the strength of the prepared alumina sample increased after surface modification. The strength of a surface modified with synthesized cordierite increased the most, to about 134.6MPa.