• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.28.1-28.1
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• 2007

• Applied Chemistry for Engineering
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• v.2 no.4
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• pp.330-339
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• 1991

The acid properties of $V_2O_5-TiO_2/SiO_2$ catalysts and the partial oxidation of o-xylene into phthalic anhydride had been investigated in order to relate the acid property of catalyst to the catalytic activity. $V_2O_5$ had both weak (V=O) and strong (V-O-V) acid sites which gave pyridine desorption peaks at $230^{\circ}C$ and $300^{\circ}C$, respectively, and the amount of weak acid sites at $230^{\circ}C$ decreased with the increase of calcination temperature. On the other hand, the amount of weak acid sites increased considerably by increasing the amount of $TiO_2$ to the $V_2O_5-TiO_2/SiO_5$, and the maximum value was shown at 20 and higher mole % of $TiO_2$ with respect to $SiO_2$. In the oxidation of o-xylene, $V_2O_5-TiO_2/SiO_2$ enhandced more the total conversion and the selectivity to phthalic anhydride than $V_2O_5/SiO_2$, and the higher $TiO_2$ ratio to $V_2O_5$ increased the total conversion but could not change the selectivity to phthalic anhydride. Weak acid sites (V=O) led o-xylene to partial oxidation producing phthalic anhydride by adsorbing o-xylene weakly, while acid sites (V-O-V) led it to total oxidation producing CO and $CO_2$ by adsorbing it strongly.

• Cement
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• s.61
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• pp.53-57
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• 1975

1) 본논문은 Zement-Kalk-Gips 75년도 8월호에 게재된 V. Satava씨 및 J. Komrska씨의 $\ulcorner$Gips und $\SiO_2$-Hydrosolein neues Bindemittel$\lrcorner$을 번역 발췌한 것으로 주요 내용은 다음과 같다. 2) $\SiO_2$ Hydrosol 중의 반수석고경화 현탁액의 강도보다 높다. 3) Hydrosol중의 $\SiO_2$ 입자는 행동이 액상과 같으므로 반수석고 현탁액의 점도는 Hydrosol중이나 물중이나 유사하며 단지 $\SiO_2$의 부피만큼 물, 석고비를 감소시킨다. 4) 경화과정에서 단위 부피당 석고 결정이 차지하는 부피가 크므로 순수하게 물을 사용했을 때보다는 강도가 높다. 5) $\SiO_2$ 분자는 경화물질의 Skeleton속의 기공을 채워 표면의 특성에 영향을 준다.

• Journal of the Korean Ceramic Society
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• v.19 no.1
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• pp.13-18
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• 1982

The crystallization of metastable "orthorhombic" phase from the glass in the system of Na $AlSi_3O_8-CaAl_2Si_2O_8$ is studied. These crystals are crystallized in the range of composition from $Ab_80An_20$ to An100. The symmetry of these crystals show orthorhombic as a possible space group P22121. Two probable twin models are proposed. proposed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.354-361
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• 2008

The dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. Manufactured samples are analyzed components by measuring FT/IR absorption lines. Decomposition each Microscopic structures through two-dimensional correlation analysis about mechanisms for the formation of SiOCH in $SiOCH_3$, Si-O-Si and Si-$CH_3$ bonding group and analyzed correlation between the micro-structure of each group. It is a tendency that seems to be growing of Si-O-Ci(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The order of changing sensitivity about changes of flow-rate in Si-O-Si(C) bonding group is cross link mode$(1050cm^{-1})$ $\rightarrow$ open link mode$(1100cm^{-1})\rightarrow$ cage link mode $(1140cm^{-1})$.

• Korean Journal of Materials Research
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• v.28 no.12
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• pp.709-713
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• 2018

To improve the etch rate of $Si_3N_4$ thin film, $H_2SiF_6$ is added to increase etching rate by more than two times. $SiO_3H_2$ is gradually added to obtain a selectivity of 170: 1 at 600 ppm. Moreover, when $SiO_3H_2$ is added, the etching rate of the $SiO_2$ thin film increases in proportion to the radius of the wafer. In $Si_3N_4$ thin film, there is no difference in the etching rate according to the position. However, in the $SiO_2$ thin film, the etching rate increases in proportion to the radius. At the center of the wafer, the re-growth phenomenon is confirmed at a specific concentration or above. The difference in etch rates of $SiO_2$ thin films and the reason for regrowth at these positions are interpreted as the result of the flow rate of the chemical solution replaced with fresh solution.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.464-468
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• 2003

The double layers of $SiO_2$/$Si_3$$N_4$ have superior charge storage stability than a single layer of $SiO_2$. Many researchers are very interested in the charge storage mechanism of $SiO_2$/$Si_3$$N_4$ [1,2]. In this paper, the electrical characteristics of thermal oxide and atmospheric pressure chemical vapor deposition (APCVD) of $Si_4$$N_4$ have been investigated and explained using high frequency capacitance-voltage measurements. Additionally, this paper will describe capacitance-voltage characteristics for double layers of $SiO_2$/$Si_4$$N_4$ by "Athena", a semiconductor device simulation tool created by Silvaco, Inc.vaco, Inc.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.152-156
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• 2004

We have studied the effective optical absorption power of Si solar cell with $SiO_2$-antireflection layer based on a mathematical modelling of AM(air mass)1 spectrum and Si refractive index in the wavelength range(0.4 $\mu\textrm{m}\leq$λ$\leq$$0.97\mu\textrm{m}$). The effective optical absorption power obtained from the theoretical calculation was 450 and 520 W/$\m^2$ for the Si solar cells with $SiO_2$-antireflection layer of 500$\AA$ and 1000$\AA$, respectively. The optimum thickness of $SiO_2$-antireflection layer showing the minimum reflection loss was about 1000$\AA$ in the computer simulation. Two kinds of Si solar cells named EBS(500$\AA$) and EBS(l000$\AA$) were fabricated to evaluate the effect of $SiO_2$-antireflection layer thickness on the optical absorption. The epitaxial base Si cell with $SiO_2$-antireflection layer of 1000$\AA$ [EBS(l000$\AA$)] showed the output power improvement of about 15% upon the EBS(500$\AA$) cell due to larger absorption of effective optical power under illumination of AM1, 1 sun.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.367-372
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• 2000

ZnO thin films were deposited on amorphous slide glass and $SiO_2$/Si substrates by Facing Targets Sputtering method with sputtering current 0.1~0.8 A, working pressure 0.5~3 mTorr and substrate temperature R.T~$400^{\circ}C$. When the sputtering current was 0.4 A, working pressure was 0.5 mTorr and substrate temperature was 30$0^{\circ}C$, ${\Delta}{\Theta}_{50}$ value of ZnO/glass and ZnO/$SiO_2$/si thin film was $3.8^{\circ}$ and $2.98^{\circ}$, respectively. In these conditions, we knew that ZnO thin film were deposited with good c-axis orientation on amorphous slide glass by FTS system.