• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.6
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• pp.350-355
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• 2014

Bottom-gate tin oxide ($SnO_2$) thin film transistors (TFTs) were fabricated on $N^+$ Si wafers used as gate electrodes. 60-nm-thick $SnO_2$ thin films acting as active layers were sputtered on $SiO_2/Al_2O_3$ films. The $SiO_2/Al_2O_3$ films deposited on the Si wafers were employed for gate dielectrics. In order to increase the resistivity of the $SnO_2$ thin films, oxygen mixed with argon was introduced into the chamber during the sputtering. The mobility of $SnO_2$ TFTs was measured as a function of the flow ratio of oxygen to argon ($O_2/Ar$). The mobility variation with $O_2/Ar$ was analyzed through studies on crystallinity, oxygen binding state, optical properties. X-ray diffraction (XRD) and XPS (X-ray photoelectron spectroscopy) were carried out to observe the crystallinity and oxygen binding state of $SnO_2$ films. The mobility decreased with increasing $O_2/Ar$. It was found that the decrease of the mobility is mainly due to the decrease in the polarizability of $SnO_2$ films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.509-512
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• 1999

Ferroelectric Sr$_2$(Nb, Ta)$_2$O$_{7}$(SNTO), La$_2$Ti$_2$O$_{7}$(LTO) thin films were prepared by sol-gel processes. SNTO, LTO thin films were spin-coated on Pt/TiO$_2$/SiO$_2$/Si(100). Pt/Ti/SiO$_2$/Si(100). PT/ZrO$_2$/SiO$_2$/Si(100) substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.ces.

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.306-311
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• 1999

$La_{2/3}Sr_{1/3}MnO_3(LSMO)/YSZ/SiO_2/Si(100)$ polycrystalline thin films were fabricated be chelated sol-gel method The effect of YSZ buffer layer at low field (120 Oe) spin-polarized tunneling magnetotransport (TMR) properties of LSMO thin film was studied at room temperature. Single perovskite LSMO thin films was obtained. The maximum TMR ratio was increased from 0.2 to 0.42 % by the insertion of YSZ buffer. YSZ as diffusion barrier was attributed to the fine microstructure of LSMO thin films and the reduction of dead layer between LSMO and $SiO_2/Si(100)$ interfaces.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.768-771
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• 2004

Pb0.5,Sr0.5TiO3(PST) thin films were deposited on Si with MgO (100) buffer layer by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. For the MgO/Si buffer layer, the PST thin films exhibited highly (100) orientation. The MgO buffer layer affects the stress state of the (100)-oriented PST thin films. The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the MgO/Si substrates measured at 10 kHz were 822, 0.025, and 80.1%, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.3
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• pp.90-94
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• 2004

The variation of electrical properties of (Ba,Sr)$TiO_3$ [BST] thin films for Metal-Insulator-Semiconductor (MIS) capacitors was investigated. BST thin films were deposited on p-Si(100) substrates by the RF magnetron sputtering with temperature range of 500~$600^{\circ}C$. The dielectric properties of MIS capacitors consisting of AUBST/$SiO_2$/Si sandwich structure were measured for various conditions. We examined the characteristics of MIS capacitor with various oxygen pressure, substrate temperature and (Ba+Sr)/Ti ratio. It was found that the leakage current was reduced in MIS capacitor with high quality $SiO_2$ layer was grown on bare p-Si substrate by thermal oxidation. The BST MIS structure showed relatively high capacitance even though it is the combination of high-dielectric BST thin films and $SiO_2$ layer. The charge state densities of the MIS capacitors and Current-voltage characteristics of the MIS capacitor were investigated. By applying $SiO_2$ layer between BST thin films and Si substrate, low leakage current of $10^{-10}$ order was observed.

• Korean Journal of Optics and Photonics
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• v.3 no.4
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• pp.205-216
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• 1992

Distribution of electric fields of surface plasmons at resonance and off-resonance angles were calculated and compared. As applications of surface plasmon resonance, (1) optical constants of ZnS films overcoated on Ag films were measured as the thickness of ZnS films increased, (2) four surface plasmon resonances distributed spatially due to the different thickness of SiO thin films overcoated on Ag films were observed in a picture frame by employing diverging waves of incidence, and (3) patterns of SiO thin films such as a grating and a character "가" overcoated on Ag films were measured by employing collimated waves of incidence.

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3593-3599
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• 2010

In an original effort, this lab attempted to employ polystyrene nanoparticles as a template for the synthesis of ordered and highly porous macroporous $SiO_2$ thin films, utilizing their high combustion temperature and narrow size distribution. However, polystyrene nanoparticle thin films were not obtained due to the low interaction between individual particles and between the particle and silicon substrate. However, polystyrene-polyacrylic acid (PS-AA) colloidal particles of a core-shell structure were synthesized by a one-pot miniemulsion polymerization approach, with hydrophilic polyacrylic acid tails on the particle surface that improved interaction between individual particles and between the particle and silicon substrate. The PS-AA thin films were spin-coated in the thickness ranges from monolayer to approximately $1.0\;{\mu}m$. Using the PS-AA thin films as sacrificial templates, macroporous $SiO_2$ thin films were successfully synthesized by vapor deposition or conventional solution sol-gel infiltration methods. Inspection with field emission scanning electron microscopy (FE-SEM) showed that the macroporous $SiO_2$ thin films consist of interconnected air balls (~100 nm). Typical macroporous $SiO_2$ thin films showed ultralow refractive indices ranging from 1.098 to 1.138 at 633 nm, according to the infiltration conditions, which were confirmed by spectroscopy ellipsometry (SE) measurements. This research shows how the synthetic control of the macromolecule such as hydrophilic polystyrene nanopaticles and silicate sol precursors innovates the optical properties and processabilities for actual applications.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.68-70
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• 2005

$SiO_2$ thin films are fabricated using sol-gel method and dipping method. Relative dielectric constant of thin films decreases a little according to increasing the measuring frequency. Tan ${\delta}$ of thin films increases a little below 100kHz and it increases rapidly over 100kHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.687-690
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• 2004

The preparation of A1203-SiO2 thin films from less than one micron to several tens of microns in thickness had been Prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. For the preparation of thin, continuous A12O3-SiO2 films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.151-154
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• 2003

AlN/Al/SiO$_2$/Si thin films for application to FBAR(Film Bulk Acoustic Resonator) devices were prepared by FTS(Facing Targets sputtering system) apparatus which provides a stable discharge at low gas pressures and can deposit high quality thin films because of the substrate located apart from the plasma. The AlN thin films were deposited on a $SiO_2(1{\mu}m)/Si(100)$ substrate using an Al bottom electrode. The process parameters were fixed such as sputering power of 200W, working pressures of 1mTorr and AlN thin film thickness of 800nm, respectively and crytallographic characteristics of AlN thin films were investigated as a function of $N_2$ gas flow rate$[N_2/(N_2+Ar)]$. Thickness of AlN thin films were measured by $\alpha$-step, the crystallographic characteristics and c-axis preferred orientation were evaluated by XRD.