• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.65-69
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• 2003

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements

• 한국표면공학회지
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• 제52권4호
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• pp.211-226
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• 2019

Optical thin films were deposited by using a reactive pulsed DC magnetron sputtering method with a high density plasma(HDP). In this study, the effect of sputtering process conditions on the microstructure and optical properties of $SiO_2$, $TiO_2$, $Nb_2O_5$ thin films was clarified. These thin films had flat and dense microstructure, stable stoichiometric composition at the optimal conditions of low working pressure, high pulsed DC power and RF power(HDP). Also, the refractive index of the $SiO_2$ thin films was almost constant, but the refractive indices of $TiO_2$ and $Nb_2O_5$ thin films were changed depending on the microstructure of these films. Antireflection films of $Air/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/Glass$ structure designed by Macleod program were manufactured by our developed sputtering system. Transmittance and reflectance of the manufactured multilayer films showed outstanding value with the level of 95% and 0.3%, respectively, and also had excellent durability.

• 한국표면공학회지
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• 제51권2호
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• pp.110-115
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• 2018

The Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films was investigated using dynamic SIMS(secondary ion mass spectrometry) analysis. DC magnetron sputter, APCVD and PECVD techniques were utilized for the deposition of Al-1%Si thin films, $SiO_2/PSG/SiO_2$ and $SiO_2/TEOS/SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of Na, Al, Si and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze chemical states of Si and O elements in $SiO_2$ passivation layers. Na peaks were observed throughout the $PSG/SiO_2$ and $TEOS/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the interfaces. Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1057-1059
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• 2002

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at $300^{\circ}C$ in oxygen ambient pressure. Electrical properties of the films were improved slightly than ZnO thin film without Si layer. Also, the optical and structural properties changed by Si layer in ZnO thin film. The optical and structural properties of Si-doped ZnO thin films were characterized by PL(Photoluminescence) and XRD(X-ray diffraction method) respectively. Electrical properties were measured by van der Pauw Hall measurements.

• The Korean Journal of Ceramics
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• 제6권1호
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• pp.68-73
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• 2000

The effects of oxygen annealing on the carbon content in MgO thin films were investigated, MgO thin films were deposited on Si(100) substrate at different temperatures of 400 to $700^{\circ}C$ and different deposition rates of 3.4 to 11.6$\AA$/min. Using rf magnetron sputtering method. Carbon content change on the surface of MgO thin films with the oxygen annealing at different temperatures was investigated using various method. The carbon content decreased as the annealing temperature increased. $Pb(Zr_{0.53}Ti_{0.47})O_3$(PZT) thin films were deposited on the MgO/Si(100) substrates. The effects of carbon content on the phase formation and the electrical properties of PZT thin films were also investigated.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.171-171
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• 2011

Atmospheric pressure- plasma enhanced chemical vapor deposition(AP-PECVD)Processes are recognized as promising and cost effective methods for wide-area coating on sheets of steel, glass, polymeric web, etc. In this study, $SiO_xC_y$ thin films were deposited by using AP-PECVD with a dielectric barrier discharge(DBD). The characteristic of $SiO_xC_y$ thin films were investigated as afunction of the HMDSO/O2/He flow rate. And the moisture permeability of $SiO_xC_y$ thin films was studied. The $SiO_xC_y$ thin films were characterized by the Fourier-transformed Infrared(FT-IR) spectroscopy and also investigated by X-ray photo electron spectroscopy(XPS), Auger Electron Spectroscopy(AES). The moisture permeability of $SiO_xC_y$ thin films was investigated by $H_2O$ permeability tester Detailed experimental results will be demonstrated through th present work.

• 한국재료학회지
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• 제28권11호
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• pp.620-626
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• 2018

Highly self-cleaning thin films of $TiO_2-SiO_2$ co-doped with Ag and F are prepared by the sol-gel method. The asprepared thin films consist of bottom $SiO_2$ and top $TiO_2$ layers which are modified by doping with F, Ag and F-Ag elements. XRD analysis confirms that the prepared thin film is a crystalline anatase phase. UV-vis spectra show that the light absorption of $Ag-F-TiO_2/SiO_2$ thin films is tuned in the visible region. The self-cleaning properties of the prepared films are evaluated by a water contact angle measurement under UV light irradiation. The photocatalytic performances of the thin films are studied using methylene blue dye under both UV and visible light irradiation. The $Ag-F-TiO_2/SiO_2$ thin films exhibit higher photocatalytic activity under both UV and visible light compared with other samples of pure $TiO_2$, Ag-doped $TiO_2$, and F-doped $TiO_2$ films.

• 마이크로전자및패키징학회지
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• 제7권2호
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• pp.37-42
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• 2000

저유전상수 폴리머와 $SiO_2$위에 형성된 Al/Ti박막의 우선방위에 대해 비교하였다. DC 마그네트론 스퍼터를 이용하여 50 nm 두께의 Ti과 500 nm의 Al-1%Si-0.5%Cu(wt%) 합금 박막을 저유전상수 폴리머와 $SiO_2$기판위에 증착하였다. Al의 우선방위는 XRD $\theta$-2$\theta$와 rocking curve로 측정하였고, Al/Ti박막의 미세조직은 투과전자현미경 (TEM)으로 관찰하였다. 저 유전상수 폴리머 위에 증착된 Al/Ti박막은 $SiO_2$위에 증착된 것보다 낮은 우선방위를 가졌다. 단면 TEM으로 Ti을 관찰한 결과, $SiO_2$위의 Ti의 결정립은 기판에 수직하게 성장하였으나 저유전상수 폴리머 위의 Ti 결정립은 등축정으로 성장하였으며, 저유전상수 폴리머위의 Al/Ti박막이 낮은 우선방위를 갖는 이유는 Ti 미세조직 때문이었다.

• 한국표면공학회지
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• 제49권5호
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• pp.467-471
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• 2016

In order to investigate the Na gettering, PSG/$SiO_2$/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/$SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/$SiO_2$/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/$SiO_2$ interface and at the $SiO_2$/Al-1%Si interfaces. Na impurity gettering in PSG/$SiO_2$/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be $SiO_2$.

• 한국표면공학회지
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• 제24권4호
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• pp.196-205
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• 1991

Multi-level thin films are very important in ULSI applications because of their high electromigration resistance. This study presents the effects of titanium, titanium nitride and titanium tungsten underlayers of the stability of multi-aluminum thin films during isothermal annealing. High purity Al(99.999%) films have been electron-beam evaporated on Ti, TiN, TiW films formed on SiO2/Si (P-type(100))-wafer substrates by RF-sputtering in Ar gas ambient. The hillock growth was increased with annealing temperatures. Growth of hillocks was observed during isothermal annealing of the thin films by scanning electron microscopy. The hillock growth was believed to appear due to the recrystallization process driven by stress relaxation during isothermal annealing. Thermomigration damage was also presented in thin films by grain boundary grooving processes. It is shown that underlayers of Al/TiN/SiO2, Al/TiW/SiO2 thin films are preferrable to Al/SiO2 thin film metallization.