• 한국표면공학회지
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• 제29권2호
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• pp.140-145
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• 1996

Silver deposits formed on copper substrates by replacement reactions show poor adhesion, and a silver film plated on such a deposit does not adhere. Silver ion makes a highly stable complex with cyanide ion, so that in a silver cyanide solution, the activity of silver ion is very small. This is one of the reasons for the universal use of cyanide baths in the industrial silver plating. However, the consideration of the difference between the values of the stability constants for bath the silver-iodide complex and the copper-iodide complex suggest that the rate of replacement deposition of silver on the copper substrate in si]ver-potassium iodide solution, could be comparatively low. To confirm this, the rate of replacement deposition of silver in both a silver-potassium iodide solution ($AgNO_3$0.10 mol/L, KI 2.00 mol/L ) and a strike silver plating bath (AgCN 0.028 mol/L, KCN 1.15 mol/L ) was estimated from the current density corresponding to the point of intersection of the anodic and the cathodic polarization curves. These estimated values were almost the same, and it is suggested that the silver-potassium iodide solution is not only a cyanide free silver plating bath capable of employing a copper substrate but a silver plating bath which requires no strike plating.

• Bulletin of the Korean Chemical Society
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• 제19권11호
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• pp.1211-1216
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• 1998

Bis(diethyldithiocarbamato)ioxomolybdenum(VI), cis-MoO2(S2CNEt2)2, 1, reacted with chlorotrimethylsilane (Me33SiCl) to give a seven-coordinate, pentagonal bipyramidal complex MoOC12(S2CN]Et2)2, 3, in which the oxo ligand is trans to the chloride ligand and the two chloride ligands are mutually cis. The monooxo molybdenum complex bis(diethyidithiocarbamato)oxomolybdenum(IV), MoO(S2CNEt2)2, 2, reacted with phenyl isocyanate (PhNCO) to give an Mo dimer MO2{μ-N(CONPh)Ph}(μ-NPh)(NPh)2(S2CNEt2)2, 4, which contains an Mo-Mo bond, two diethyldithiocarbamato ligands, two terminal imido (NPh) ligands, and two bridging hnido (NPh) ligands. One of the two bridging NPh ligands seemed to have been attacked by the electrophilic phenyl isocyanate carbon, which suggests that the bridging imido NPh ligand is more nucleophilic than the terminal one. Crystallographic data for 3: monoclinic space group P21/c, a=8.908(l) Å, b=17.509(3) Å, c=12.683(2) Å, β=110.15(1)°, Z=4, R(wR2)=0.0611(0.1385). Crystallographic data for 4-THF: orthorhombic space group P212121, a=17.932(4) Å, b=22.715(5) Å, c=11.802(3) Å, Z=4, R(wR2)=0.0585(0.1286).

• 센서학회지
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• 제33권3호
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• pp.158-164
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• 2024

We developed a self-operated paper pump that can maintain a nearly constant flow rate of an aqueous solution along a paper strip channel in paper-based analytical devices (PADs). The quasi-stationary flow rate was controlled by increasing the crosssectional channel area (capillary force) using a fan-shaped absorption pad coupled with a paper strip channel. The flow rate is regulated by varying the fan angle of the circular absorbing pad. Furthermore, the flow rate can be increased by furnishing a hollow cavity at the center of a conventional paper strip channel. The rate was regulated by varying the length of the hollow paper channel in the flow rate range of 5.1-26.4 mm/min. As a preliminary work, a paper-pump-coupled PAD was fabricated, and its CV detection capability was evaluated for the redox reaction of Fe(CN)₆^+4/+3. The combination of a paper pump with a PAD resulted in an ideal CV curve with a higher limiting current and faster response time. These results are interpreted well by the Levich equation, which suggests that the paper pump is a very useful component in paper-based sensors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.54-54
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• 1999

다이아몬드 합성시 질소 첨가는 Cn 화합물의 합성가능성을 비롯하여 다이아몬드의 질소 도핑, 성장 속도 및 결정성 변화 등 다양한 관점에서 중요한 의미를 가지고 있다. 본 연구에서는 다이아몬드의 일반적인 합성조건에서 질소를 첨가하여 합성된 막의 형상 및 상 변화에 대해 고찰하였다. 막은 다이아몬드 전처리시킨 Si 기판위에 microwave plasma CVD 장치를 이용하여 합성하였다. 유입되는 혼합가스(CH4+H2+N2)에서 N2 첨가량을 0-95%까지 변화시켰다. 이때 CH4 농도는 5%로 고정하였고, 합성온도는 90$0^{\circ}C$-115$0^{\circ}C$까지 변화시켰다. 이와 같이 합성된 막의 표면조직 및 성장 두께를 측정하기 위해 주사전자현미경을 이용하였다. 상의 분석은 Raman, XRD 및 TEM 분석을 이용하였으며, 조성분석을 위해 XPS 및 AES를 사용하였다. 질소 첨가량에 따라 합성된 막은 첨가하지 않은 경우에 다이아몬드 결정에서 시작하여 질소첨가에 따라 결정면이 깨지는 것으로 나타났다. 그러나 30%, 45%의 경우는 다시 결정면이 나타났다. 다량의 질소가 첨가되었을 때, 다시 결정면을 보이는 다이아몬드가 합성된 것은 매우 흥미로운 결과이다. 한편 질소와 메탄만의 기체하에서는 다시 결정면이 관찰되지 않았다. 이들 상의 구조는 XRD 및 TED 분석을 통해 모두 다이아몬드로 확인되었다. 기체내의 질소의 첨가에 관계없이 고상내에 질소는 확인되지 않았다. 따라서 이방법에 의한 CN 화합물의 합성은 힘든 것으로 보여진다. 이들 실험 결과를 근거로 온도 및 조성에 따른 기체의 열역학적 계산을 통하여 합성거동과의 연관성을 검토하였다. anode는 매우 높은 충전용량을 갖는데 첫 번째 방전시에 Li2O를 생성하여 비가역적 반응을 나타내고 계속되는 충방전 동안 Li-Sn 합금이 생성되어 2차전지의 가역적 반응을 가능하게 한다. SnO2 는 대기중에서 Li 금속보다 안정하기 때문에 전지의 제작 공정 및 사용 면에서 매우 우수한 물질이지만 아직까지 SnO2 구조적 특성과 전지의 충, 방전 특성에 대한 관계의 규명을 위한 정확한 정설은 제시되고 있지 못하다. 본 연구에서는 TFSB anode 물질로써 SnOx박막을 상온에서 여러 전도성 콜렉터 위에 증착하여 그 충, 방전 특성을 보고하였다. 증착된 SnOx박막의 표면은 SEM, AFM으로 분석하였으며 구조의 분석은 XR와 Auger electron spectroscope로 하였다. 충, 방전 특성을 분석하기 위하여 리늄 foil을 대극과 참조 전극으로 하여 EC:DMC=1:1, 1M LiPF6 액체 전해질을 사용한 Half-Cell를 구성하여 100회 이상의 정전류 충, 방전 시험을 행하였다. Half-Cell test 결과 박막의 구조, 콜렉터의 종류 및 Sn/O비에 따라 서로 다른 충, 방전 거동을 나타내었다.다. 거의 없었다. 5mTorr 일 때가 가장 좋았다.수 있음을 알 수 있었다. 그러므로, RNA바이러스의 하나인 BVDV의 viral replicon을 이용하여 다양한 종류의 포유동물 세포에 유전자 발현벡터로써 사용할 수 있음으로 post-genomics시대에 다양한 종류의 단백질 기능연구에 맡은 도움이 되리라 기대한다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(na

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.433-433
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• 2012

As the requirement in patterning geometry continuously shrinks down, the termination of etch process at the exact time became crucial for the success in nano patterning technology. By virtue of real-time optical emission spectroscopy (OES), etch end point detection (EPD) technique continuously develops; however, it also faced with difficulty in low open ratio etching, typically in self aligned contact (SAC) and one cylinder contact (OCS), because of very small amount of optical emission from by-product gas species in the bulk plasma glow discharge. In developing etching process, one may observe that coupon test is being performed. It consumes costs and time for preparing the patterned sample wafers every test in priority, so the coupon wafer test instead of the whole patterned wafer is beneficial for testing and developing etch process condition. We also can observe that etch open area is varied with the number of coupons on a dummy wafer. However, this can be a misleading in OES study. If the coupon wafer test are monitored using OES, we can conjecture the endpoint by experienced method, but considering by data, the materials for residual area by being etched open area are needed to consider. In this research, we compare and analysis the OES data for coupon wafer test results for monitoring about the conditions that the areas except the patterns on the coupon wafers for real-time process monitoring. In this research, we compared two cases, first one is etching the coupon wafers attached on the carrier wafer that is covered by the photoresist, and other case is etching the coupon wafers on the chuck. For comparing the emission intensity, we chose the four chemical species (SiF2, N2, CO, CN), and for comparing the etched profile, measured by scanning electron microscope (SEM). In addition, we adopted the Dynamic Time Warping (DTW) algorithm for analyzing the chose OES data patterns, and analysis the covariance and coefficient for statistical method. After the result, coupon wafers are over-etched for without carrier wafer groups, while with carrier wafer groups are under-etched. And the CN emission intensity has significant difference compare with OES raw data. Based on these results, it necessary to reasonable analysis of the OES data to adopt the pre-data processing and algorithms, and the result will influence the reliability for relation of coupon wafer test and whole wafer test.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2000년도 추계학술발표회 초록집
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

• 한국진공학회지
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• 제7권3호
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• pp.242-247
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• 1998

DC saddle-field-plasma-enhanced chemical-vapor deposition(PECVD) 장치를 이용 하여 상온에서 p-type Si(100)기판위에 hydrogenated amorphous carbon nitride [a-C:H(N)] 박막을 증착하였다. 원료가스인 $CH_4$과 $N_2$의 전체압력은 90mTorr로 고정하고 $N_2/CH_4$비를 0 에서 4까지 변화하면서 제작한 a-C:H(N)박막의 미세구조의 변화를 연구하였다. 진공조의 도달 진공도는 $1\times10^{-6}$Torr이고, 본 실험시 $N_2+CH_4$가스의 유량은 5sccm으로 고정하고 배 기량을 조절하여 진공조의 가스 압력을 90mTorr로 고정하였으며 기판에 200V의 직류 bias 전압을 인가하였다. $\alpha$-step과 X-ray photoelectron spectroscopy(XPS)를 이용한 분석결과 $N_2/CH_4$비가 0에서 0.5로 증가함에 따라 박막 두께는 4840$\AA$에서 2600$\AA$으로 급격히 감소하 였으며, 박막내의 탄소에 대한 질소함유량(N/C비)는 N2/CH4비가 4일 때 최대 0.25로 증가하 는 것을 확인하였다. 또한 XPS 스펙트럼의 fitting 결과 $N_2/CH_4$비가 증가할수록 CN결합이 증가하였다. Fourier Transformation Infrared(FT-IR) 분석결과 $N_2/CH_4$비가 증가함에 따라 박막내의 C-H결합은 감소하고, N-H, C≡N결합은 증가하였다. Optical bandgap 측정 결과 $N_2/CH_4$비가 0에서 4로 증가함에 따라 a-C:H(N)박막의 bandgap 에너지는 2.53eV에서 2.3eV 로 감소하는 것을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• 한국동물학회지
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• 제14권2호
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• pp.75-84
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• 1971

Genetic analysis of a new wing mutant, Surf wings (Srf), was performed. Mutant flies were extracted from a wild population of Drosophila melanogaster at the vicinity of Atomic Energy Research Institute, Seoul in August-September 1969. 1. The distal half of wings of heterozygotes (Srf/+) turned upwards about 40 degree from body axis, but flying ability was not disturbed. They overlap Cy in low frequency when they are grown below $22^{\circ}C$. This resembles with Si or j series, but wing margins are not rolled and diversed. Postscutellars are erected slightly, but they, in general, are not crossed. Any other external pleiotropic effects were not observed. 2. Penetrance and expressivity of both sexes are not complete. Their extents are variable with sex and temperature. These characters show maximum tendencies when the development is made at $22^{\circ}C$ (female: P = 0.996, E = 0.932, male:P = 0.961, E = 0.698). 3. The preliminary locus of Srf was determined to be 66.8 on the right arm of second chromosome by using recessive maker gene cn bw. 4. The homozygous flies(Srf/Srf) have shown perfect lethality. The heterozygotes (Srf/+), on the other hand, have shown to be viable and fertile. Srf chromosomes are kept in a balanced lethal system with Pm chromosomes which are associated with inversions. Hence, it is partially reasonable to suppose that Srf may persist in a natural population by the same mechanism. 5. Allelism test with Cy was also conducted. The fact that combination with Cy in the trans-phase (+ Srf/Cy +) is viable in contrast to the lethality of Srf/Srf and Pm/Pm indicates that Srf and Cy are not functionally allelic.

• 한국지구과학회지
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• 제34권4호
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• pp.313-328
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• 2013

영남육괴 북동부에 분포하는 쥐라기 심성암체들은 유라시아대륙의 동북부지역 아래로 고태평양판의 섭입에 의해서 야기된 활발했던 화성활동의 산물이다. 지화학적 연구를 통하여 이 지역에 분포하는 화강암류의 성인과 지구조환경을 유추하여 보았다. 영남육괴 북동부에 위치하는 울진화강암류는 비알칼리(subalkaline)영역에 속하는 칼크-알칼리(calc-alkaline)계열로, 분화에 따른 주성분원소의 변화 경향은 전반적으로 다른 지역의 쥐라기 화강암류의 분화 경향과 유사하게 나타나지만, 각 암체의 분화경향이나 화학조성을 살펴볼 때 각 암체의 마그마 근원물질은 서로 다른 것으로 사료된다. 울진화강암류는 연구지역 주변에 분포하는 다른 화강암류와 비교하여 $Al_2O_3$의 함량 및 Cr, Co, Ni, Sr, Y, Nb 등 미량원소의 함량에서 뚜렷한 차이를 보인다. 울진화강암류의 지화학적 특징은 높은 $Al_2O_3$, Sr 함량과 높은 Sr/Y, La/Yb비를 가지며, 낮은 Y과 Yb함량과 같은 슬랩용융(slab-melting)으로 생성된 아다카이트에서 흔히 관찰되는 지화학적 특성을 나타낸다. 울진화강암류의 주성분원소($SiO_2$, $Al_2O_3$, MgO) 및 미량원소(Sr, Y, La, Yb) 함량 범위는 아다카이트질 화강암의 범주에 포함되며, 지화학적 특성, 지구조환경 및 관입시기가 일본의 북서부 Hida belt에 위치한 Yatsuo심성암체와 유사하다. 연구지역의 암석의 희토류원소 패턴은 경희토류가 중희토류에 비해 부화($(La/Yb)_{CN}=10.6-103.4$)되어 나타나며, Eu의 부(-)이상을 보이지 않는다. ANK vs. A/CNK과 지구조판별도에서 화강암류의 모마그마는 I-type의 화산호 화강암의 특성을 나타내며, 이자나기(Izanagi)판의 섭입에 의한 압축장 응력이 작용하는 대륙연변부에서 생성된 것으로 해석된다.