• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1212-1218
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• 1995

Al2O3-coated SiC composite powder and mechanically mixed Al2O3-SiC composite powder were synthesized using Al-isopropoxide and commercial SiC as the starting materials. Experiment results showed that the sinterability of Al2O3-coated SiC composite powder was more improved than the mechanically mixed Al2O3-SiC composite powder by the effect of homogeneous coating of alumina around SiC particles. Hence, the mechanical properties of the former was also much more improved than the latter.

• Carbon letters
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• v.15 no.3
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• pp.180-186
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• 2014

This study highlights a novel method and mechanism for the rapid and effective milling of carbon fibers (CFs) in silicon carbide (SiC) powder, and also the dispersion of CFs in SiC powder. The composite powders were prepared by chopping and exfoliation of CFs, and ball milling of CFs and SiC powder in isopropyl alcohol. A wide range of CFs loading, from 10 to 50 vol%, was studied. The milling of CFs and SiC powder was checked by measuring the average particle size of the composite powders. The dispersivity of CFs in SiC powder was checked through scanning electron microscope. The results show that the usage of exfoliated CF tows resulted in a rapid and effective milling of CFs and SiC powder. The results further show an excellent dispersion of CFs in SiC powder for all CFs loading without any dispersing agent.

• Journal of the Korean Ceramic Society
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• v.37 no.6
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• pp.589-595
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• 2000

Densification behavior of SiC powder was investigated under cold compaction. A special form of the Cap model was proposed from experimental data of SiC powder under triaxial compression. To compare with experimental data of SiC powder under cold compaction, the proposed constitutive model was implemented into a finite element program (ABAQUS). Finite element calculations from the Cam-Clay model and the modified Drucker-Prager model were also compared with experimental data of SiC powder. The agreements between experimental data and finite element results obtained from the proposed constitutive model are reasonably good. In die pressing, finite element results obtained from the Cam-Clay model and the modified Drucker-Prager model, however, show lower average density of SiC powder compacts compared to experimental data.

• Journal of Powder Materials
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• v.9 no.1
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• pp.11-18
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• 2002

The 6061 Al alloy based composites reinforced with 10 vol% SiC whiskers were prepared by powder metallurgy with the powders having the different sizes, i.e. < $30{\mu}m$ and > $30{\mu}m$ The composites were subjected to equal channel angular pressing (ECAP) at various conditions and the microstructural changes during ECAP were examined In the composites SiC whiskers were clustered and randomly aligned. The clusters were relatively well distributed in the composite with the smaller initial powder size. After ECAP, the clusters were aligned parallel to flow direction and became smaller. In addition, the shape of clusters was changed from irregular to round. The microstructure of the ECAPed samples were compared with those of the conventionally hot-extruded composites. The uniform microstructure and enhanced microhardness could be obtained by using the powders having the smaller size, decreasing ECAP temperature and repeating ECAP.

• Journal of the Korean Ceramic Society
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• v.48 no.1
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• pp.1-5
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• 2011

Silicon carbide (SiC) has recently drawn an enormous industrial interest because of its useful mechanical properties such as thermal resistance, abrasion resistance and thermal conductivity at high temperature. RF Thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) has been utilized for synthesis of high purity SiC powder from cheap inorganic solution (Tetraethyl Orthosilicate, TEOS). It is found that the powders by thermal plasma consist of SiC with free carbon and amorphous silica ($SiO_2$) and, by thermal treatment and HF treatment, the impurities are driven off resulting high purity SiC nano-powder. The synthesized SiC powder lies below 30 nm and its properties such microstructure, phase composition, specific surface area and free carbon content have been characterized by X-ay diffraction (XRD), field emission scanning electron microscopy (FE-SEM), thermogravimetric (TG) and Brunauer-Emmett-Teller (BET).

• Journal of Powder Materials
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• v.1 no.2
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• pp.135-144
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• 1994

Silicon carbide powder was prepared from mixtures of Sangdong silica sand and carbon black by SHS (Self propagating High temperature Synthesis) method which utilizes magnesiothermic reduction of silica. In the powder preparation process, the reacted powder was leached by chloric acid to remove the magnesium oxide and was subsequently roasted to remove free carbon. The impurities were mostly eliminated by hot acid treatment. The resultant SiC powder showed the mean particle size of 0.22 ${\mu}{\textrm}{m}$ and the specific surface area of $66.55 m^2/g$. The SiC powder was mixed with 1 wt% of boron and of carbon to increase densification rate. The mixed powder was pressed and sintered pressurelessly at $2100^{\circ}C$ for 30 min in argon gas. The sintered body showed the hardness of $2550 kg{\cdot}f/mm^2$ and the fracture toughness, KIC of $3.47 MN/m^{3/2}$.

• Resources Recycling
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• v.26 no.1
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• pp.16-21
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• 2017

This paper relates to the synthesis of a source powder for SiC crystal growth. ${\beta}-SiC$ powders are synthesized at high temperatures (>$1400^{\circ}C$) by a reaction between silicon powder and carbon powder. The reaction is carried out in a graphite crucible operating in a vacuum ambient (or Ar gas) over a period of time sufficient to cause the Si+C mixture to react and form poly-crystalline SiC powder. End-product characterizations are pursued with X-ray diffraction analysis, SEM/EDS, particle size analyzer and ICP-OES. The purity of the end-product was analyzed with the Korean Standard KS L 1612.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.1
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• pp.57-63
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• 2017

High-purity ${\beta}-SiC$ powders for SiC single-crystal growth were synthesized by direct carbonization. The use of high-purity raw materials to improve the quality of a SiC single crystal is important. To grow SiC single crystals by the PVT method, both the particle size and the packing density of the SiC powder are crucial factors that determine the sublimation rate. In this study, we tried to produce high-purity ${\beta}-SiC$ powder with large particle sizes and containing low silicon by introducing a milling step during the direct carbonization process. Controlled heating improved the purity of the ${\beta}-SiC$ powders to more than 99 % and increased the particle size to as much as ${\sim}100{\mu}m$. The ${\beta}-SiC$ powders were characterized by SEM, XRD, PSA, and chemical analysis to assess their purity. Then, we conducted single-crystal growth experiments, and the grown 4H-SiC crystals showed high structural perfection with a FWHM of about 25-48 arcsec.

• Journal of Powder Materials
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• v.7 no.1
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• pp.35-41
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• 2000

Al2O3$.$SiC particle was prepared was prepared by the self-propagting high temperature sYthesis(SHS) process from a mixture of SiO2, Al and C powders, The fabricated Al2O3$.$SiC particle was applied to 2024Al/(Al2O3$.$SiC)pcomposite as a reinforcement. Aluminum matix composites were fabricares by the powder extrusion method using the synthesized Al2O3$.$SiC particle and commercial 2024Al powder. Theoptimum preparation conditions for Al2O3$.$SiC partticle by SHS process were described. The influence of the Al2O3$.$SiC voiume fraction on the mechanical was composite was also discussed. Despite adiabatic temperature was about 2367K, SHs reaction was completed not by itself, but by using pre-heating. Mean particle size of final particle synthesized was 0.73 ${\mu}$m and most of the particle was smaller than 2${\mu}$m. Elastic modulus and tensile strength of the composite increased with increase the volume fraction of reinforcement but, tensile strength depreciated at 30 vol% of reinforcement.

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.61-64
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• 2010

In this paper, we investigate the quality difference of SiC crystals grown by a conventional physical vapor transport method using various SiC powders. While the growth rate was revealed to be dependent upon the particle size of the SiC powder, the growth rate of SiC bulk crystals grown using SiC powder with a smaller particle size (20 nm) was definitely higher than those using lager particle sizes with $0.1-0.2\;{\mu}m$ and $1-10\;{\mu}m$, respectively. All grown 2 inch SiC single crystals were proven to be the polytype of 6H-SiC and the carrier concentration levels of about $10^{17}\;cm^3$ were determined from Hall measurements. It was revealed that the particle size and process method of SiC powder played an important role in obtaining a good quality, high growth rate, and to reduce growth temperature.