• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.143-143
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• 2010

In this study, we demonstrate that ZnO deposited onto $SiO_2$ substrates by magnetron sputtering produces p-type ZnO at higher $O_2$ pressure and n-type ZnO at lower $O_2$ pressure. We also report the effect of hydrogen peroxide ($H_2O_2$) on the stability of undoped ZnO thin films. The films were immersed in 30% $H_2O_2$ for 1 min at $30^{\circ}C$ and annealed in $O_2$at $450^{\circ}C$. The carrier concentration, mobility. and conductivity were measured by a Hall effect measurement system. The Hall measurement results for ZnO films untreated with $H_2O_2$ but annealed in $O_2$ indicate that oxygen fraction greater than ~0.5 produces undoped p-type ZnO films, whereas oxygen fraction less than ~0.5 produces undoped n-type ZnO films. This is attributed to the fact that the oxygen vacancies ($V_o$) decrease and the oxygen interstitials ($O_i$) or zinc vacancies ($V_{Zn}$) increase with increasing oxygen atoms incorporated into ZnO films during deposition and $O_2$ post-annealing.

• Biomolecules & Therapeutics
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• v.18 no.1
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• pp.99-105
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• 2010

The purpose of this study was to evaluate relative bioavailability of the coenzyme Q10 (CoQ10) in emulsion and three liposome formulations after a single oral administration (60 mg/kg) into rats. Emulsion formulation of CoQ10 was prepared by conventional method using Phospholipon 85G as an emulsifier, and three liposome formulations (neutral, anionic, and cationic) of CoQ10 were prepared by traditional lipid film hydration technique using Phospholipon 85G, cholesterol, and charge carrier lipids (1,2-dioleoyl-3-trimethylammonium-propane chloride salt for cationic liposome and 1,2-dimyristoyl-sn-glycero-3-phosphate monosodium salt for anionic liposome). Mean particle size of all CoQ10-loaded liposome was less than a micron, and size distribution of the liposome population was homogeneous. Bioavailability of CoQ10 in emulsion was 1.5 to 2.6-fold greater than liposome formulations in terms of $AUC_{0-24\;h}$. $T_{max}$ was 3 h when administered as emulsion while it was greater than 6 h in liposome formulations. Notably, it was approximately 8 h in cationic liposome. $C_{max}$ was highest in emulsion and was significantly decreased when administered as liposome. Charged liposome showed even lower $C_{max}$ than neutral liposome, especially in cationic liposome. In conclusion, therefore, it is suggested that clinicians and patients consider bioavailability issue a primary concern when choosing a CoQ10 product, especially when very high plasma level is required such as in the treatment of heart failure and Parkinson's disease.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.1
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• pp.23-27
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• 2011

Fabrication of porous silicon(PS) double layer by electrochemical etching is the first step in process of ultrathin solar cell using PS layer transfer process. The porosity of the porous silicon layer can be controlled by regulating the formation parameters such as current density and HF concentration. PS layer is fabricated by electrochemical etching in a chemical mixture of HF and ethanol. For electrochemical etching, highly boron doped (100) oriented monocrystalline Si substrates was used. Ths resistivity of silicon is $0.01-0.02\;{\Omega}{\cdot}cm$. The solution composition for electrochemical etching was HF (40%) : $C_2H_5OH$(99 %) : $H_2O$ = 1 : 1 : 2 (by volume). In order to fabricate porous silicon double layer, current density was switched. By switching current density from low to high level, a high-porosity layer was fabricated beneath a low-porosity layer. Etching time affects only the depth of porous silicon layer.

• Korean Journal of Materials Research
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• v.8 no.11
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• pp.977-981
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• 1998

Controlling the wafer temperatures from 200 to$500^{\circ}C$, low resistive tungsten thin films used for VLSI metallization are deposited by PECVD method. Resistivities of plasma deposited tungsten thin films are very sensitive to the $H_2/WF_6 $ partial pressure ratios. Residual stress behaviors of the films as a function of plasma power density were also studied. At the power density under the $0.7W/\textrm{cm}^2$, residual stress of W film is about $2.4\times10^9dyne/\textrm{cm}^2$. When the power density is. however, increased from 1.8 to $2.7W/\textrm{cm}^2$, residual stress is suddenly increased from $8.1\times10^9$ to $1.24\times10^{10}dyne/\textrm{cm}^2$ ue to the ion or radical bombardment at high power density.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.133-133
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• 1998

In the thin film alloy formation of the transition metals ion-beam-mixing technique forms a metastable structure which cannot be found in the arc-melted metal alloys. Sppecifically it is well known that the studies about the electronic structure of ion-beam-mixed alloys pprovide the useful information in understanding the metastable structures in the metal alloy. We studied the electronic change in the ion-beam-mixed ppt-Ct alloys by XppS and XANES. These analysis tools pprovide us information about the charge transfer in the valence band of intermetallic bonding. The multi-layered films were depposited on the SiO2 substrate by the sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr. These compprise of 4 ppairs of ppt and Cu layers where thicknesses of each layer were varied in order to change the alloy compposition. Ion-beam-mixing pprocess was carried out with 80 keV Ae+ ions with a dose of $1.5\times$ 1016 Ar+/cm2 at room tempperature. The core and valence level energy shift in these system were investigated by x-ray pphotoelectron sppectroscoppy(XppS) pphotoelectrons were excited by monochromatized Al K ａ(1486.6 eV) The ppass energy of the hemisppherical analyzer was 23.5 eV. Core-level binding energies were calibrated with the Fermi level edge. ppt L3-edge and Cu K-edge XANES sppectra were measured with the flourescence mode detector at the 3C1 beam line of the ppLS (ppohang light source). By using the change of White line(WL) area of the each metal sites and the core level shift we can obtain the information about the electrons pparticippating in the intermetallic bonding of the ion-beam-mixed alloys.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.81.1-81.1
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• 2012

나노임프린트 리소그라피(Nano-Imprint Lithography, NIL) 기술은 기판위의 resin을 나노구조물이 각인된 스탬프로 눌러서 나노구조물을 형성하는 기술로, 경제적이고 효과적으로 나노구조물을 제작할 수 있는 기술이다. 그중에서도 UV 기반의 나노임프린트(UV-NIL) 기술은 resin을 투명한 스탬프로 누른뒤 UV로 경화시켜 나노구조물을 형성하는 기술로써 고온, 고압($140{\sim}180^{\circ}C$, 10~30bar)이 필요한 가열식 나노임프린트 기술에 비해 상온, 상압($20^{\circ}C$, 1bar)에서도 구조물 형성이 가능하여 다층구조 형성에 적합하다. 연속적인 임프린팅 공정에 의해 resin이 quarz 스탬프에 잔류하여 패터닝에 결함을 유발하게 되므로 오염물을 제거하기 위한 세정공정이 필요하다. 하지만 UV에 의해 경화된 resin은 cross-linking을 형성하여 화학적인 내성이 증가하게 되므로 제거하기가 어렵다. 현재는 resin 제거를 위한 세정공정으로 SPM($H_2SO_4/H_2O_2$) 세정이 사용되고 있는데 세정시간이 길고 세정 후에 입자 또는 황 잔유물이 남으며 많은 유해용액 사용의 문제점이 있어 효과적으로 resin을 제거할 세정공정이 필요한 상황이다. 본 연구에서는 친환경적인 UV 세정 및 오존수 세정공정을 적용하여 경화된 resin을 제거하는 연구를 진행하였다. 실험샘플은 약 100nm 두께의 resin을 증착한 $1.5cm{\times}1.5cm$ $SiO_2$ 쿠폰 wafer를 사용하였으며, UV 및 오존수의 처리시간을 달리하여 resin 제거효율을 평가하였다. ATR-FTIR 장비를 사용하여 시간에 따른 resin의 두께를 측정한 결과, UV 세정으로 100nm 높이의 resin중에 80nm의 bulk resin이 단시간에 제거가 되었고 나머지 20nm의 resin thin film은 오존수 세정으로 쉽게 제거되는 것을 확인 하였다. 또한 표면에 남은 resin residue와 particle을 제거하기 위해서 SC-1 세정을 진행하였고 contact angle과 optical microscope 장비를 사용하여 resin이 모두 제거된 것을 확인하였다.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.13-21
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• 1999

Flip chip assembly directly on organic boards offers miniaturization of package size as well as reduction in interconnection distances resulting in a high performance and cost-competitive Packaging method. This paper describes the investigation of alternative low cost flip-chip mounting processes using electroless Ni/Au bump and anisotropic conductive adhesives/films as an interconnection material on organic boards such as FR-4. As bumps for flip chip, electroless Ni/Au plating was performed and characterized in mechanical and metallurgical point of view. Effect of annealing on Ni bump characteristics informed that the formation of crystalline nickel with $Ni_3$P precipitation above $300^{\circ}C$ causes an increase of hardness and an increase of the intrinsic stress resulting in a reliability limitation. As an interconnection material, modified ACFs composed of nickel conductive fillers for electrical conductor and non-conductive inorganic fillers for modification of film properties such as coefficient of thermal expansion(CTE) and tensile strength were formulated for improved electrical and mechanical properties of ACF interconnection. The thermal fatigue life of ACA/F flip chip on organic board limited by the thermal expansion mismatch between the chip and the board could be increased by a modified ACA/F. Three ACF materials with different CTE values were prepared and bonded between Si chip and FR-4 board for the thermal strain measurement using moire interferometry. The thermal strain of ACF interconnection layer induced by temperature excursion of $80^{\circ}C$ was decreased with decreasing CTEs of ACF materials.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.138-143
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• 2015

Aluminum nitride, a compound semiconductor, has a Wurtzite structure; good material properties such as high thermal conductivity, great electric conductivity, high dielectric breakdown strength, a wide energy band gap (6.2eV), a fast elastic wave speed; and excellent in thermal and chemical stability. Furthermore, the thermal expansion coefficient of the aluminum nitride is similar to those of Si and GaAs. Due to these characteristics, aluminum nitride can be applied to electric packaging components, dielectric materials, SAW (surface acoustic wave) devices, and photoelectric devices. In this study, we surveyed the crystallization and preferred orientation of AlN thin films with an X-ray diffractometer. To fabricate the AlN thin film, we used the magnetron sputtering method with $N_2$, NH3 and Ar. According to an increase in the partial pressures of $N_2$ and $NH_3$, Al was nitrified and deposited onto a substrate in a molecular form. When AlN was fabricated with $N_2$, it showed a c-axis orientation and tended toward a high orientation with an increase in the temperature. On the other hand, when AlN was fabricated with $NH_3$, it showed a-axis orientation. This result is coincident with the proposed mechanism. We fabricated AlN thin films with an a-axis orientation by controlling the sputtering electric power, $NH_3$ pressure, deposition speed, and substrate temperature. According to the proposed mechanism, we also fabricated AlN thin films which demonstrated high a-axis and c-axis orientations.

• Journal of Korean Society of Forest Science
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• v.97 no.1
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• pp.53-60
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• 2008

This study was carried out to investigate the optimum management system during a overwintering for the production of Pinus densiflora container 2-0 seedlings. The experiment performed between 2005~2006 in a polyethylene film house (PE house) located at Yeoju-Gun in Kyungki-Do. During the winter in the PE house, the difference in maximum day temperature and minimum day temperature was large, and the difference in temperature was detected between the container keeping locations. During the winter season, the maximum day temperatures at the seedling bench in January and February were $32.8^{\circ}C$ and$36.6^{\circ}C$, respectively, whereas those at the ground in January and February were $16.0^{\circ}C$ and $24.4^{\circ}C$, respectively. Water contents of container seedlings was reduced gradually from the beginning the experiment, and reduced rapidly from February to March, and increased rapidly from April. Container seedlings showed different death rate according to the extending of the irrigation cycle. Death rate by one week and two weeks of irrigation cycle was 4.8% and 6.5%, and 38.5% and 49.4% of death rate occurred by three and four weeks of irrigation cycle, respectively. It is suggested that the proper irrigation cycle for P. densiflora 2-0 container seedlings during overwintering is two weeks. When containers placed directly on the ground, the root of container seedlings went out through the drainage of the container, and grew out in the soil. These roots were cut while moving the container to the bench in spring.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.83-90
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• 2023

The β-Ga₂O₃ has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga₂O₃ has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga₂O₃ single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga₂O₃ single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga₂O₃ were prepared by adding different mole ratios of SnO₂ powder to Ga₂O₃ powder, and β-Ga₂O₃ single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga₂O₃ single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga₂O₃ single crystal according to the Sn doping were extensively investigated.