• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.242-242
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• 2010

산화 알루미늄($Al_2O_3$) 박막을 p-type Czochralski(CZ) Si 위에 Remote Plasma Atomic Layer Deposition(RPALD)을 이용하여 저온 공정으로 증착하였다. Photolithography 공정으로 grid 패턴을 형성한 후 열 증착기로 알루미늄을 증착하여 MIS-IL (Metal-Insulator-Semiconductor Inversion Layer) solar cell을 제작하였다. 반응소스로는 Trimethylaluminum (TMA)과 $O_2$를 이용하였다. $Al_2O_3$ 박막의 전기적 특성 평가를 위해 MIS capacitor를 제작하여 Capacitance-voltage (C-V), Current-voltage (I-V), Interface state density ($D_{it}$)를 평가하였으며 Solar simulator를 이용하여 MIS-IL Solar cell의 Efficiency을 측정하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.48-49
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• 2008

본 실험에서는 대향 타겟식 스퍼터링 (face target sputtering, FTS) 장비를 사용하여 플렉서블 디스플레이용 poly ethylene naphthalate (PEN) 플라스틱 기판 위에 보호층으로 사용된 $ZrO_2$ 박막의 특성들에 대해 연구하였다. FTS에 의해 3 시간동안 증착된 $ZrO_2$ 박막의 기판 온도는 $69^{\circ}C$ 로 낮은 증착 온도를 나타내었으며, 이는 유리전이온도가 낮은 PEN 과 같은 플라스틱 기판위에 박막 증착시 적용하기에 적합하다. 제작된 $ZrO_2$ 박막에서 기판 중심으로부터 거리의 함수로 측정된 박막의 두께 차이는 약 4.5%로 매우 균일한 두께를 갖는 것으로 측정되었다.

• Journal of Magnetics
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• v.14 no.4
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• pp.161-164
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• 2009

Iron-doped $Sn_{1-x}Fe_xO_2$ (x = 0.0, 0.05, 0.1, 0.2, 0.33) thin films on Si(100) substrates and powders were prepared by a chemical solution process. The x-ray diffraction (XRD) patterns of the $Sn_{1-x}Fe_xO_2$ thin films and powders showed a polycrystalline rutile tetragonal structure. Thermo gravimetric (TG) - differential thermal analysis (DTA) showed the final weight loss above $430{^{\circ}C}$ for all powder samples. According to XRD Rietveld refinement of the powders, the lattice parameters and unit cell volume decreased with increasing Fe content. The magnetic properties were characterized using a vibrating sample magnetometer (VSM) and M$\ddot{o}$ssbauer spectroscopy. The thin film samples with x = 0.1 and 0.2 showed paramagnetic properties but thin films with x = 0.33 exhibited ferromagnetic properties at room temperature. Mossbauer studies revealed the $Fe^{3+}$ valence state in the samples. The ferromagnetism in the samples can be interpreted in terms of the direct ferromagnetic coupling of ferric ions via an electron trapped in a bridging oxygen deficiency, which can be explained using the F-center exchange model.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.242.2-242.2
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• 2014

Plasma-polymer thin films (PPTF) have been deposited on a Si(100) wafer and glass under several conditions such as different RF power by using plasma-enhanced chemical vapor deposition (PECVD) system. Ethylcyclohexane, ammonia gas, hydrogen and argon were utilized as organic precursor, doping gas, bubbler gas and carrier gases, respectively. PPTFs were grown up with RF (ratio frequency using 13.56 MHz) powers in the range of 20~60 watt. PPTFs were characterized by FT-IR (Fourier Transform Infrared), FE-SEM (Scanning Electron Microscope), AFM (Atomic Force Microscope), Contact angle and Probe station. The result of FT-IR measurement showed that the PPTFs have high cross-link density nitrogen doping ratio was also changed with a RF power increasing. AFM and FE-SEM also showed that the PPTFs have smooth surface and thickness. Impedance analyzer was utilized for the measurements of C-V curves having different dielectric constant as RF power.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.509-509
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• 2011

Superhydrophobic surfaces on alloyed steels were fabricated with a non-conventional method of plasma etching and subsequent water immersion procedure. High aspect ratio nanopatterns of nanoflake or nano-needle were created on the steels with various Cr content in its composition. With CF4 plasma treatment in radio-frequence chemical vapor deposition (r.-f. CVD) method, steel surfaces were etched and fluorinated by CF4 plasma, which induced the nanopattern evolution through the water immersion process. It was found that fluorine ion played a role as a catalyst to form nanopatterns in water elucidated with XPS and TEM analysis. The hierarchical patterns in micro- and nano scale leads to superhydrophobic properties on the surfaces by deposition of a hydrophobic coating with a-C:H:Si:O film deposited with a gas precursor of hexamethlydisiloxane (HMDSO) with its lower surface energy of 24.2 mN/m, similar to that of curticular wax covering lotus surfaces. Since this method is based on plasma dry etching & coating, precise patterning of surface texturing would be potential on steel or metal surfaces. Patterned hydrophobic steel surfaces were demonstrated by mimicking the Robinia pseudoacacia or acacia leaf, on which water was collected from the humid air using a patterned hydrophobicity on the steels. It is expected that this facile, non-toxic and fast technique would accelerate the large-scale production of superhydrophobic engineering materials with industrial applications.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.395-400
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• 2007

Ambient drying sol-gel processing was used for monolithic silica ambigels in the temperature range of $130-250^{\circ}C$. A new method of mesopore ambigels, which mean the aerogels prepared by ambient pressure drying process synthesis, is suggested at first. This method includes two important approaches. The first point is that $SiO_{2}$ surface modification of wet gel was performed by trimethylchlorosilane in n-butanol solution. This procedure is provided the silica gel mesopore structure formation. The second point is a creation of the ternary azeotropic mixture water/n-butanol/octane as porous liquid, which is effectively provided removing of water such a low temperature by 2 step drying condition under ambient pressure. The silica aerogels, which were prepared by ambient pressure drying from azeotropic mixture of water/n-butanol/octane, are transparent, crack-free and mesoporous (pore size ${\sim}$ 5.6 nm) with surface area of ${\sim}$ $923{\;}m^2/g$, bulk density of $0.4{\;}g/cm^3$ and porosity of 85 %.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.496-496
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• 2011

A very simple and cost-effective method for fabrication of SiOx-incorporated diamond-like carbon (DLC) thin films at a preparation temperature of less than $200^{\circ}C$ was developed. Since DLC coating can be prepared not under vacuum but atmospheric conditions without any carrier gas flow, not only wafers but also powderic substrates can be used for DLC coating. Formation of DLC coating could result in appearance of superhydrophobic behaviors, which was sustained in a wide range of pH (1~14). DLC-coated surfaces selectively interacted with toluene in a toluene/water mixture. These results imply that our preparation method of the DLC coating can be useful in many application fields such as creating self-cleaning surfaces, and water and air purification filters.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.25 no.12
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• pp.674-678
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• 2013

We present a non-invasive technique to the measure temperature distribution in nano-sized porous thin films by means of the two-color laser-induced fluorescence (2-LIF) of rhodamine B. The fluorescence induced by the green line of a mercury lamp with the makeup of optical filters was measured on two separate color bands. They can be selected for their strong difference in the temperature sensitivity of the fluorescence quantum yield. This technique allows for absolute temperature measurements by determining the relative intensities on two adequate spectral bands of the same dye. To measure temperature fields, Silica (SiO2) nanoporous structure with 1-um thickness was constructed on a cover glass, and fluorescent dye was absorbed into these porous thin films. The calibration curves of the fluorescence intensity versus temperature were measured in a temperature range of $10-60^{\circ}C$, and visualization and measurement of the temperature field were performed by taking the intensity distributions from the specimen for the temperature field.

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.263-267
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• 2007

Hafnium oxide $(HfO_2)$ films were deposited on Si(100) substrates by remote plasma-enhanced atomic layer deposition (PEALD) method at $250^{\circ}C$ using TEMAH [tetrakis(ethylmethylamino)hafnium] and $O_2$ plasma. $(HfO_2)$ films showed a relatively low carbon contamination of about 3 at %. As-deposited and annealed $(HfO_2)$ films showed amorphous and randomly oriented polycrystalline structure. respectively. The interfacial layer of $(HfO_2)$ films deposited using remote PEALD was Hf silicate and its thickness increased with increasing annealing temperature. The hysteresis of $(HfO_2)$ films became lower and the flat band voltages shifted towards the positive direction after annealing. Post-annealing process significantly changed the physical, chemical, and electrical properties of $(HfO_2)$ films. $(HfO_2)$ films deposited by remote PEALD using TEMAH and $O_2$ plasma showed generally improved film qualities compare to those of the films deposited by conventional ALD.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.6
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• pp.113-120
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• 2007

Chemical vapor deposition (CVD) is one of the various synthesis methods that have been employed for carbon nanotube (CNT) growth. In particular, Ren et al reported that large areas of vertically aligned multi-wall carbon nanotubes could be grown using a direct current (dc) PECVD system. The synthesis of CNT requires a metal catalyst layer, etchant gas, and a carbon source. In this work, the substrates consists of Si wafers with Ni-deposited film. Ammonia $NH_3$) and acetylene ($C_2H_2$) were used as the etchant gases and carbon source, respectively. Pretreated conditions had an influence on vertical growth and density of CNTs. And patterned growth of CNTs could be achieved by lithographical defining the Ni catalyst prior to growth. The length of single CNT was increased as niclel dot size increased, but the growth rate was reduced when nickel dot size was more than 200 nm due to the synthesis of several CNTs on single Ni dot. The morphology of the carbon nanotubes by TEM showed that vertical CNTs were multi-wall and tip-type growth mode structure in which a Ni cap was at the end of the CNT.