• Proceedings of the Korean Vacuum Society Conference
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• 1997.07a
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• pp.114-114
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• 1997

• Journal of Information Display
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• v.6 no.3
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• pp.12-17
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• 2005

The need for low cost, flexible, thin film transistor (TFT) display backplanes has focused attention on new processing techniques and materials. We report the development of TFT backplane technology based entirely on jet-printing, using a combination of additive and subtractive processing, to print active materials or etch masks. The technique eliminates the use of photolithography and has the potential to reduce the array manufacturing cost. The printing technique is demonstrated with both amorphous silicon and polymer semiconductor TFT arrays, and we show results of small prototype displays.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1267-1268
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• 2008

The two-shot SLS method has recently been successfully implemented in volume manufacturing of advanced LTPS-based LCDs. In this presentation, we discuss how the approach is also well suited for being implemented in high-throughput and high-yield manufacturing of large AMOLED displays on large glass substrates.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1779-1783
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• 2006

The hybrid thin-film (HTF) passivation layer composed of the UV curable acrylate layer and MS-31 (MgO:SiO2=3:1wt%) layer was adopted in organic light emitting diode (OLED) to protect organic light emitting materials from penetrations of oxygen and water vapors. The moisture resistance of the deposited HTF layer was measured by the water vapor transmission rate (WVTR). The results showed that the HTF layer possessed a very low WVTR value of lower than $0.007g/m^2$ per day at $37.8^{\circ}C$ and 100% RH. Therefore, the HTF on the OLED was found to be very effective in protect what from the penetrations of oxygen and moisture.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1998.10a
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• pp.67-74
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• 1998

Two kinds of polished and unpolished freestanding films prepared by DC plasma CVD method were impacted by SiC particles to understand erosion mechanism. Erosion damage caused by solid impact was characterized by surface profilometer, scanning electron microscopy and Raman spectroscopy. Gradually decrease of surface roughness and sharp reduction of crystallinity for unpolished CVD films were observed with increasing erosion time. It was found that smaller grains of the diamond were removed in early stage of erosion process and larger grains were eroded with further impingement. By introduction of re-growth method on polished diamond, further understanding of erosion mechanism was achieved. Most of the surface fractures were initiated at the grain boundary.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1999.03b
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• pp.116-119
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• 1999

The effects of secondary phase morphology and carbon content on the plastic deformation of 0.2C-1.5Si-1.5mn TRIP(TRansformed Induced Plasticity) steel have been investigated at various annealing and bainitic transformation temperatures. The morphology of ferrite and secondary phases was controlled by the annealing temperature and the distribution of secondary phase was controlled by the bainitic transformation temperature. The secondary phase contributed to elongation and/or UTS depending on the ferrite morphology which determined deformation mode simple elongation or rotation of secondary phase along the tensile direction In case of the sample containing the granular type retained austenite the elongation was improved as carbon stabilized the austenite phase. If the film-shape retained austenite in acicular ferrite was dominant however UTS was enhanced as the transformed martensite was hardened by carbon.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.81-83
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• 1992

The superconducting thin films deposited on $SiO_x$ substrate by R.F magnetron sputter using $YBa_2Cu_3O_x$ single target have been made and annealed at $940^{\circ}C$ for 30 min. The thickness of films were 1000-2000${\AA}$ with a rate of 20-25${\AA}/min$ and superconducting properties of thin films depended on the compositions of pre-annealed the thin films. It has been analyzed by SEM photo-analysis and X-ray diffraction patterns of these samples obtained under the various conditions of this sputtering methods. and recognized the supperconducting thin films by electric properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.256-258
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• 2003

Two Si wafers are bonded with indium-silver alloy using diffusion bonding method. When silver and indium thin films are contacted, they diffuse into each other and form inter-metallic compounds like $AgIn_2$, $Ag_2In$, $Ag_3In$ etc. These compounds are determined by ratio of two metals. From phase diagram of Ag-In alloy, we can get the ratio of $Ag_2In$, that has high melting point about 700$^{\circ}C$, approximately 2:1. This ratio was made by controlling of film thickness. And bonding was executed by annealing and adding pressures at a time. The joint of these wafers had been observed by SEM. And we had also seen the EDS (Energy Dispersive Spectroscopy) data to analysis the component of samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.45-46
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• 2005

The piezoelectric ZnO thin films were deposited onto Al/Si substrate in order to figure out the crystalline and the residual stress of deposited films. As the $Ar/O_2$ gas ratio is increased, c-axis orientation of deposited films is significantly enhanced and also the residual stresses of ZnO films are all compressive. They are decreased from -1.2 GPa to -950 MPa as the $Ar/O_2$ gas ratio is increased. A diaphragm-based piezoelectric microspeaker fabricated on ONO films shows about 14 mPa output pressure at 1 kHz with $8V_{peak-to-peak}$.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.760-765
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• 1996

Silicon oxide thin films are prepared by plasma-enhanced CVD (PECVD) using 100kHz and 13.56MHz generators. Source gases are two sorts of mixture, tetramethoxysilane (TMOS) and oxygen, and tetramethylsilane (TMS) and oxygen. We investigate the effect of frequency on film properties of deposited films including mechanical properties. 100kHz PECVD process can deposit silicon oxide films at $23^{\circ}C$ at the power of 20W. X-ray photoelectron spectroscopy (XPS), infrared spectroscopy (IR) and ellipsometric measurements reveal that the structural quality of the films prepared both by 100kHz process and by 13.56MHz process are very like silicon dioxide. The 100kHz process is adequate for low temperature deposition of SiOx films.